TO-261AA PACKAGE Search Results

FL014

Abstract: TO261AA IRFL014PBF 314P irf sot223 L014
Contextual Info: PD- 95227 IRFL014PbF _Lead-Free www.irf.com 1 04/28/04 IRFL014PbF 2 www.irf.com IRFL014PbF www.irf.com 3 IRFL014PbF 4 www.irf.com IRFL014PbF www.irf.com 5 IRFL014PbF 6 www.irf.com IRFL014PbF www.irf.com 7 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)

fl014

Abstract: 314P TO261AA
Contextual Info: PD- 95228 IRFL210PbF • Lead-Free www.irf.com 1 04/28/04 IRFL210PbF 2 www.irf.com IRFL210PbF www.irf.com 3 IRFL210PbF 4 www.irf.com IRFL210PbF www.irf.com 5 IRFL210PbF 6 www.irf.com IRFL210PbF www.irf.com 7 IRFL210PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA

Contextual Info: FS02.N SENSITIVE GATE SCR On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-261AA SOT-223 FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability

TO-261AA Package

Abstract: IT 223 SOT223 nu FL014
Contextual Info: IRLL014N Package Outline SOT-223 TO-261AA Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP 8 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R

sot-223 body marking D K Q F

Abstract: MV7005T1 pd 223 V7005
Contextual Info: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for

marking 651 sot223

Contextual Info: ON Semiconductort PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface

transistor P2D

Contextual Info: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

AYW marking code IC

Abstract: 306 marking code transistor MARKING KV SOT-223 BSP16T1 BSP19AT1 BSP19AT1G
Contextual Info: BSP19AT1 Preferred Device NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for

TRANSISTOR bH-16

Abstract: onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3 marking BH-10
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

pzta96t1

Abstract: ZTA96
Contextual Info: MOTOROLA Order this document by PZTA96T1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA96T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 450 Vdc Collector–Base Voltage

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 BCP56-10T1 bh16 BH-16 SOT
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

sot-223 body marking D K Q F

Abstract: ct-96 MV7404T1
Contextual Info: MOTOROLA Order this document by MV7404T1/D SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a

TRANSISTOR bH-16

Abstract: bh16 transistor BH-16 transistor BCP53T1 BH onsemi SOT-223 16T1 BCP53T1 BCP56 BCP56T1 BCP56T3
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

zt751

Abstract: Zt-75 TRANSISTOR zt751
Contextual Info: PZT751T1 Preferred Device PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

marking 651 sot223

Contextual Info: PZT651T1 Preferred Device NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

t2406 MOTOROLA

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TM OS FET 700 mA 240 VOLTS This TM OS medium power field effect transistor is designed for

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS SOT-223 for Surface Mount MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS on = 1.7 OHM MAX This TMOS medium power field effect transistor is designed for

FT960

Abstract: ft960 sot-223 MMFT960T1 MMFT960T1G A1 SOT-223 MOSFET
Contextual Info: MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223

ZT 751

Abstract: zt751 On semiconductor date Code sot-223 MPS65 PZT651T1 PZT751T1 PZT751T1G
Contextual Info: PZT751T1 Preferred Device PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SO T-223 for Surface Mount TM O S V N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

Contextual Info: ON Semiconductort PZTA92T1 High Voltage Transistor PNP Silicon ON Semiconductor Preferred Device COLLECTOR 2,4 BASE 1 SOT−223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage

MMFT6N03HD

Abstract: h bridge ad 156 transistor
Contextual Info: MOTOROLA Order this document through Power Products Marketing SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT6N03HD HDTMOS Single N-Channel Field Effect Transistor Medium Power Surface Mount Products These medium power SOT–223 devices are an advanced series

motorola transistor dpak marking

Abstract: 1N10 2N3904 AN569 MMFT1N10E MMFT1N10ET1 MMFT1N10ET3 SMD310
Contextual Info: MOTOROLA Order this document by MMFT1N10E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT1N10E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET