TO-247 FULLPAK PACKAGE Search Results

IRFI540

Abstract: TO-247 FULLPAK Package 0642 LEADFORM TO-220 FULLPAK Package irfp4502
Contextual Info: TO-220 FullPak and TO-247 Leadform Options This Selection Guide gives details of the Leadforms that International Rectifier can offer on it’s TO-220 FullPak and TO-247 packages. These variations allow the flexibility to meet a variety of design requirements.

IRFIP250

Abstract: TO-247 FULLPAK Package 9746 AN972
Contextual Info: International ioR Rectifier PD-9.746 IRFIP250 HEXFET Power MOSFET • • • • • • • Isolated Package DC Package solation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm Dynamic dv/dt Rating

SIL-PAD to-247

Abstract: FIP244 IRFIP450 TO-247 FULLPAK Package UAA 1021 EMHART PIR D 203 S 0S3C IRFIZ44G aluminium pop rivet
Contextual Info: International S R ectifier /IPPLICNriON NOTES Savings tips that add value to y im r dtsijius. PU BU SH e ETeW ^ R E C T I F i B ^ 2 K 'K ^ ^ ^ S T O E E l f , '^ ^ E G U N D 6 T C A l i 0 2 4 5 . 310 ‘322-3331" AN-972B Thermal and Mechanical Considerations

FIP450

Abstract: T0447 PAD46ABS FULLPAK FP450
Contextual Info: APPLICATION NOTE 972A Thermal and Mechanical Considerations For FullPak Applications HEXFET is a trademark o f International Rectifier by Peter Wood indicated. The requirem ents for such packages are listed below: Plastic Packages Plastic m olded sem iconductors

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R330P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R330P6,IPP60R330P6,IPA60R330P6 1Description

6R190E6

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS E6600V 600VCoolMOS™E6PowerTransistor IPx60R190E6 DataSheet Rev.2.2 Final Industrial&Multimarket 600VCoolMOS™E6PowerTransistor IPW60R190E6,IPP60R190E6,IPA60R190E6 1Description

irfip240

Abstract: DIODE PN junction diode
Contextual Info: • 4aS54SE Q01S3D" ^ " 1NR PD‘9744 IRFIP240 International [^1 Rectifier HEXFET« Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER Isolated Package DC Package Isolation^ 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm

irfip254

Contextual Info: International " [i ^rI Rectifier HEXFET« Power MOSFET 0015322 ‘,27 •INR PD9747 IRFIP254 INTERNATIONAL RECTIFIER • Isolated Package • DC Package Isolations 4.0KVDC • AC Package lsolation= 2.0KVRMS © • Lead to Lead Creepage Dist.= 7.5mm • Sink to Lead Creepage Dist.= 6.0mm

6r125p

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R125P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R125P6,IPP60R125P6,IPA60R125P6 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R230P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6,IPP60R230P6,IPA60R230P6 1Description

6r160p

Abstract: IPP60R160P6
Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R160P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R160P6,IPP60R160P6,IPA60R160P6 1Description

IPM PLASMA

Abstract: 200W solar inverter SOLAR INVERTER IRAM136-3063B 3000w smps 300W solar inverter IRAMS10UP60A smps 2500w IRG4PC50SPBF IRAMY20UP60B
Contextual Info: IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R099P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R099P6,IPP60R099P6,IPA60R099P6 1Description

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R190P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R190P6,IPP60R190P6,IPA60R190P6 1Description

SJ 76 A DIODE

Abstract: irfip140 RG-910 AN972 3A diode International Rectifier
Contextual Info: " 44S5MS D0152,s 3bT" INR PD9742 IRFIP140 International k?r: Rectifier HEXFET P ow er M O S FE T • • • • • • • INTERNATIONAL RECTIFIER Isolated Package DC Package Isolation^ 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm

irfip054

Abstract: s772
Contextual Info: 4055452 International ïor Rectifier 0G 152 fl b Gbb H I N R PD-9.741 IRFIP054 INTERNATIONAL RECTIFIER HEXFET Power MOSFET Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm Sink to Lead Creepage Dist.= 6.0mm

irfip9140

Abstract: marking 44t
Contextual Info: m 4055452 003,5350 oöe minr pd-9.857 IRFIP9140 International i»r Rectifier HEXFET Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER bSE D Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm

5R280CE

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R280CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPW50R280CE,IPP50R280CE 1Description TO-247

irfip250

Abstract: rectifier 802
Contextual Info: International [gagRectifier “ ,SSS1'52 001S31b b23 IRFIP250 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.746 IINR Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm

RF740LC

Abstract: 393y RF740 RF74
Contextual Info: International I Ö R Rectifier HEXFEI Power MOSFETs • d Qg Total <D V BR DSS Continuous Gate Charge R0 Droin-fo-Source ^DS(on) Continuous Drain Current Fax (nC) Case On-State Drain Current Max. Thermal Max. Power Breakdown on 100° Port Resistance Resistance Dissipation

6R041

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R041P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R041P6 1Description TO-247

RFD110

Abstract: RFD120 RFD420 9122S H 9032 rfd210
Contextual Info: H EX FEI Pow er M O S FET s International IöR Rectifier •d Port •d V BR DSS Drain-to -So u rce B reakdow n V o ltage R DS(on) O n -S te te Resistance Continuous D rain Current 25°C (V ) (H (A ) Num ber Continuous Drain Current 100° (A) R Po M a x . Therm al M a x . Power

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R070P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R070P6 1Description TO-247

irfip244

Abstract: 5-J04 International rectifier 1A
Contextual Info: " ws55,sa 0D1S31D1DS" INR PD'a745 IRFIP244 International js» Rectifier HEXFET Power M O S F E T • • • • • • • INTERNATIONAL RECTIFIER Isolated Package DC Package Isolation^ 4.0KVDC A C Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm