TO-247 AD Search Results

Contextual Info: DSEI 30-10A Fast RecoveryEpitaxial Diode FRED TO-247 AD VRSM V DSEI 30 IFAVM = 30 A 1000 VRRM = 1000 V = 35 ns Symbol trr l l l l l l International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses

APT17N80BC3

Abstract: APT20N60BC3 APT20N60SC3
Contextual Info: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package

Contextual Info: DSEI60-06A Fast Recovery Epitaxial Diode FRED TO-247 AD DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr VRSM V VRRM Type V C 600 600 DSEI 60-06A A A C C A = Anode, C = Cathode Features ● ● ● ● ● ● ● International standard package JEDEC TO-247 AD

APT17N80BC3

Abstract: APT17N80SC3
Contextual Info: APT17N80BC3 APT17N80SC3 800V 17A 0.290Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS

Contextual Info: DSP 25 VRRM = 1200/1600 V IF RMS = 2x43 A IF(AV)M = 2x28 A Phase-leg Rectifier Diode VRSM VRRM V V 1300 1700 1200 1600 TO-247 AD TO-268 AA ISOPLUS 247 TM DSP 25-12AT DSP 25-16AT DSP 25-16AR TO-268 AA Version A Version AT Type DSP 25-12A DSP 25-16A Symbol

Contextual Info: DSEI 30-06A Fast Recovery Epitaxial Diode FRED TO-247 AD DSEI 30 IFAVM = 37 A VRRM = 600 V = 35 ns trr VRSM V VRRM Type C V A 640 600 A = Anode, C = Cathode A Features ● ● ● ● ● ● ● International standard package JEDEC TO-247 AD Planar passivated chips

Contextual Info: STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFETs with fast diode in D2PAK and TO-247 packages Datasheet - production data Features Order codes STB36NM60ND TAB STW36NM60ND 3 1 2 3 1 D2PAK TO-247 VDSS @TJ

smd diode 819

Abstract: packages to247 355 smd smd diode 615
Contextual Info: DSP 25 Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A R RM F R M S F(AV)M v*RSM V 1300 1700 v HRM TO-247AD V Type 1200 1600 TO-247 AD TO-247SMD DSP 25-12A DSP 25-16A TO-247 SMD DSP 25-12AS DSP 25-16AS 2 3 Symbol Test Conditions U(RMS) ^F(AV)M TVJ Pt

Contextual Info: STB36NM60ND, STW36NM60ND Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFETs with fast diode in D2PAK and TO-247 packages Datasheet - production data Features Order codes STB36NM60ND TAB STW36NM60ND 3 1 2 3 1 D2PAK TO-247 VDSS @TJ

to-268

Abstract: DSA003685 1910 0016 diode
Contextual Info: DSP 25 VRRM = 1200/1600 V IF RMS = 2x43 A IF(AV)M = 2x28 A Phase-leg Rectifier Diode VRSM VRRM V V 1300 1700 1200 1600 TO-247 AD TO-268 AA ISOPLUS 247 TM DSP 25-12AT DSP 25-16AT DSP 25-16AR TO-268 AA Version A Version AT Type DSP 25-12A DSP 25-16A Symbol

STGW50NB60M

Contextual Info: STGW50NB60M N-CHANNEL 50A - 600V - TO-247 PowerMESH IGBT TYPE STGW50NB60M • ■ ■ ■ VCES VCE sat (25°C) IC 600 V < 1.9 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 1 TO-247

SCHEMATIC dimmer igbt

Abstract: SCHEMATIC igbt dimmer igbt dimmer STGW35NB60SD GW35NB60SD JESD97 igbt dimmer applications circuit diagram IGBT light DIMMER
Contextual Info: STGW35NB60SD N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH IGBT General features Type VCES VCE sat (Max)@ 25°C IC @100°C STGW35NB60SD 600V < 1.7V 35A • LOW ON-VOLTAGE DROP (VCEsat) ■ LOW INPUT CAPACITANCE ■ HIGH CURRENT CAPABILITY 3 2 1 TO-247

50N60

Abstract: 50N6
Contextual Info: IGBT with Diode vCES IXSX50N60AU1 IXSX50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2

Contextual Info: STB34NM60N, STP34NM60N, STW34NM60N N-channel 600 V, 0.092 Ω, 31.5 A MDmesh II Power MOSFETs in D²PAK, TO-247 and TO-220 packages Datasheet - production data Features TAB Order codes 2 3 1 2 3 1 2 D PAK TO-247 TAB VDSS RDS on ID PTOT STP34NM60N 600 V

HRG75100

Abstract: RHRG75100 RHRG7570 RHRG7580 RHRG7590
Contextual Info: RHRG7570, RHRG7580, RHRG7590, RHRG75100 75A, 700V - 1000V Hyperfast Diode March 2001 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE TO-247

HRG75100

Abstract: RHRG75100 RHRG7570 RHRG7580 RHRG7590
Contextual Info: RHRG7570, RHRG7580, RHRG7590, RHRG75100 75A, 700V - 1000V Hyperfast Diode January 2002 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE TO-247

26n60

Abstract: 26N60P PLUS220SMD
Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions

Contextual Info: Advance Technical Information IXFH42N60P3 Polar3TM HiperFETTM Power MOSFET VDSS ID25 RDS on = 600V = 42A Ω ≤ 185mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTH420N04T2

Abstract: t420n
Contextual Info: Advance Technical Information IXTH420N04T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 40V = 420A Ω ≤ 2.0mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR

P22NM60

Abstract: STB22NM60 STB22NM60-1 STF22NM60 STP22NM60 STW22NM60 ST T4 0560 F22NM60 V4011 w22nm60
Contextual Info: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 • ■ ■ ■ ■ VDSS RDS on 600 600 600

52N50P2

Abstract: IXFH52N50P2 ixfh52n50
Contextual Info: Advance Technical Information IXFH52N50P2 IXFT52N50P2 PolarP2TM HiperFETTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 52A Ω ≤ 120mΩ TO-247 (IXFH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C

Contextual Info: IRFP054N l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-247AC Description The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of

26N60P

Abstract: PLUS220SMD
Contextual Info: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol

Contextual Info: Advance Technical Information HiPerFASTTM IGBT IXSH24N60 IXSH24N60A Short Circuit SOA Capability VCES IC90 VCE sat 600V 600V 24A 24A 2.2V 2.7V TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ