TO-220 2N7002 Search Results

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

IRFZ44N

Abstract: FP60N bs108 mosfet fp75n FP50N
Contextual Info: MOSFET DEVICE INDEX Note: For a complete listing of General Semiconductor part numbers, refer to the Master Data Book Index on pages 6-11. 2N7000 . 220

FIDU

Abstract: Compal Electronics ACES87151 2N7002-SOT23 ho165
Contextual Info: POWER LED PCB LAYERS: 8 LAYERS BATTERY LED +5VALW +5VALW 1 1 *Change +3VALW to +5VALW D1 HT-210UD/NB_1024 JP1 10K S C 1 3 32 2 R5 300_0603_5% E 47K Q4 DTA114YKA_SOT23 B 2BATT_LOW_LED# C 10K 1 *Change DTA114YKA to 2N7002 @V-PORT-0603-220 M-V05_0603 BATT_CHGI_LED#2

1N914 SOT-23

Abstract: BC337 SOT-23 BAT48 zener 1N4148 SOD323 BC337 sot23 gfp50n
Contextual Info: G e n e r a l Semiconductor Diodes and Transistors Visit General SemiconductorÕs Website at www.gensemi.com GENFETª Power MOSFETs Small Signal Switching Diodes Mfr.Õs Type N-Channel MOSFETs Leaded Mfr.Õs Type TO-220 TO-252 TO-263 Ñ Ñ Ñ Ñ Ñ Ñ Ñ Ñ

N-CHANNEL MOSFET 30V 2A SOT-23

Abstract: N2 SOT-23 capacitor 470uf 25v 470uF/ 25V capacitor electrolytic capacitor 470uF 25v 6930A 2N7002 SOT-23 Electrolytic Capacitor 25V 470uf 470uF 25V FAIRCHILD 2N7002
Contextual Info: DVD 12.6V to 15.4V VIN C3 2.2uF 10V C2 0.1uF 9 R1 75k 2 16 VCC 15 VL IN BST COMP C1 2.2nF SHDN D1 CMPSH-3 U1 MAX1967 DH LX DL N2 2N7002 GND C5 390uF 25V MV-AX 14 13 C4 0.1uF N1 1/2 FDS 6930A 12 N1 1/2 FDS 6930A 11 10 L1 22uH CDRH127 -220 3.3V@2A VOUT C6 470uF

C702E

Contextual Info: CMPDM7002AE SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for high speed pulsed amplifier and driver applications.

Contextual Info: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

C702E

Contextual Info: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for

Contextual Info: CMPDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-channel MOSFET designed for

Contextual Info: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

Contextual Info: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

Contextual Info: CEDM7002AE ENHANCED SPECIFICATION SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEDM7002AE is a special ESD protected version of the 2N7002 enhancement-mode N-Channel MOSFET designed for

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

2N7002PT

Abstract: SURFACE MOUNT 75vds p mosfet
Contextual Info: E L E C T R O N I C 2N7002PT N-Channel Enhancement Mode Field Effect Transistor - 0.25Amp 60Volt □ Application -Servomotor control -Power MOSFET gate drivers -Other switching applications SOT-23 .082 2.10 .066(1.70) .119(3.04) .110(2.80) .019(0.50) .018(0.30)

2N7002TGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE

2N7002PT

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 * Rugged and reliable.

2N7002

Abstract: 2n7002-tp 2N7002TPT
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002TPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE

2N7002W

Abstract: 2N7002WT1G 71-G1
Contextual Info: 2N7002W Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 Features • • • • ESD Protected Low RDS on Small Footprint Surface Mount Package This is a Pb−Free Device http://onsemi.com Applications • • • • V(BR)DSS RDS(on) MAX ID MAX

2N7002A-7

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits • N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance Description  Fast Switching Speed  Small Surface Mount Package

Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002ET1G

Abstract: 2N7002E PF401
Contextual Info: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

2N7002ET1G

Abstract: 2N7002E
Contextual Info: 2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N−Channel, SOT−23 Features • • • • Low RDS on Small Footprint Surface Mount Package Trench Technology This is a Pb−Free Device http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V