TO-126 NPN SWITCHING TRANSISTOR 400V Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N3D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13002N8D TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N3 TRANSISTOR NPN TO-126 FEATURES z Power switching applications z Good high temperature z Low saturation voltage z High speed switching 1. BASE 2. COLLECTOR

E13003

Abstract: E13003 transistor E13003 SWITCHING REGULATOR APPLICATION transistor E13003 E13003 IC e13003 f to-126 npn switching transistor 400v E13003 NPN Transistor features E1300 e13003 to126 TRANSISTOR
Contextual Info: POWER TRANSISTOR E13003 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body ±B ± U TO-126 F C Q M ±A ± 1 2 3 H K J V G R 0.25 0.010 S NPN SILICON TRANSISTOR

E13001

Abstract: transistor E13001 E1300 IC e13001 e13001 TRANSISTOR
Contextual Info: POWER TRANSISTOR E13001 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body ±B ± U TO-126 F C Q M ±A ± 1 2 3 H K J V G R 0.25 0.010 S NPN SILICON TRANSISTOR

to-126 npn switching transistor 400v

Abstract: 3dd13003 UI9600
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR NPN TO-126 FEATURES 1.BASE • power switching applications 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003 TRANSISTOR NPN TO-126 FEATURES 1.BASE • power switching applications 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-126 • power switching applications 1.BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Value Unit Collector -Base Voltage 600

to-126 npn switching transistor 400v

Abstract: C2611 2611 transistor 2611
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors C 2611 TRANSISTOR NPN TO-126 FEATURE power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector -Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors C 2611 TRANSISTOR NPN TO-126 FEATURE power switching applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-126 • power switching applications 1.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Value Units Collector -Base Voltage 600

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-126 • power switching applications 1.BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Value Unit Collector -Base Voltage 600

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-126 • power switching applications 1.BASE MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol Value Unit Collector -Base Voltage 600

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 3DD13003 TRANSISTOR NPN FEATURES 1.BASE • power switching applications 2.COLLECTOR 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter

e13005 2

Abstract: E13005 transistor E13005 E13005 transistor E13005 -2 E13005 D e13005- 2 E13005 TRANSISTOR npn .E13005 TRANSISTOR npn ,transistor E13005
Contextual Info: POWER TRANSISTOR E13005 SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body ±B ± U TO-126 F DIM A B C D F G H J K M Q R S U V C Q M ±A ± 1 2 3 H K J V G NPN SILICON TRANSISTOR

c2611 transistor

Abstract: C2611 transistor C2611 to-126 npn switching transistor 400v *c2611 transistor
Contextual Info: C2611 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.900 4.100 3.000 3. BASE 3.200 10.60 0 11.00 0 3 0.000 0.300 2 1 Features — 2.100 2.300 power switching applications 1.170 1.370 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

to-126 npn switching transistor 400v

Abstract: 3DD13003 transistor 3540 7400 IC symbol NPN Transistor 1A 400V to-126 transistor
Contextual Info: 3DD13003 NPN TO-126 Transistor TO-126 1.BASE 2.COLLECTOR 2.500 1.100 2.900 1.500 7.400 7.800 3.EMITTER 3.900 4.100 3.000 3 3.200 2 10.60 0 11.00 0 1 0.000 0.300 Features 2.100 2.300 power switching applications 1.170 1.370 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

4126L

Abstract: 4126 4126-T60-T 4126L-T60-T to-126 npn switching transistor 400v
Contextual Info: UNISONIC TECHNOLOGIES CO., 4126 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS . DESCRIPTION UTC 4126 is designed for specially used for electronic ballasters in 110VAC environment. 1 FEATURES TO-126 * Triple diffused technology.

to-126 npn switching transistor 400v

Abstract: TS13003CK TS13003 TS13003CT to-126 HIGH SPEED SWITCHING transistor TO-92 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-126 BVCEO = 400V BVCBO = 700V Ic = 1.5A VCE SAT , = 0.8V @ Ic / Ib = 0.5A / 0.1A Pin assignment: 1. Emitter 2. Collector 3. Emitter Features — Ordering Information High voltage. Part No. — High speed switching Structure

lb122

Abstract: LB122T to-126 npn switching transistor 400v
Contextual Info: DC COMPONENTS CO., LTD. LB122T DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR Description Designed for use in medium power switching applications. TO-126 Pinning .304 7.72 .285(7.52) 1 = Emitter 2 = Collector 3 = Base

Contextual Info: BD13003B 1.5A , 700V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  TO-126 Power Switching Applications CLASSIFICATION OF ts Product-Rank BD13003B-A1 BD13003B-A2

Contextual Info: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 3A 0.17V @ IC=1A, IB=0.2A Block Diagram ● Low spread of dynamic parameters ● High switching speed ●

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

KSC5026M

Abstract: npn transistor vceo 800v to-126 npn switching transistor 400v
Contextual Info: KSC5026M KSC5026M High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO