TN0524N3 Search Results

TN0520N3

Abstract: TN0602N2 TN0204N2 TN0524N2 tn0620n2 TN0202N3 TN0202ND TN0204N3 TN0204ND TN0520N2
Contextual Info: - 332 - f Ta=25cC y Vds m % tt € or f Vdg it TN0202N2 TN0202N3 TN0202ND TNQ2Q4N2 TN0204N3 TN0204ND TN0520N2 TN0520N3 TN0520ND TN0524N2 TN0524N3 TN0524ND TN0602N2 TNÛ6Q2N3 TN0602ND TN06Û4N2 TN0604N3 TN0604ND TN0604WG TN0606N2 TN0606N3 TN0606N5 TN06O6NO

TN0520N3

Abstract: TN0520 TN0524 TN0524N3
Contextual Info: TN0520 TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package 200V 10Ω 300mA 1.5V TN0520N3 240V 10Ω 300mA 1.5V TN0524N3 TO-92 7 Features Low Threshold DMOS Technology

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

IRF-520 Mosfet

Abstract: cell phone charger 3.7 VDC cost of logic pulser TN0520N3 IRF P CHANNEL MOSFET logic pulser cost pioneer mosfet VN1210N5 VN0220N3 5V to 240V relay ic
Contextual Info: TN/TP Series Applications TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure

ICM7555

Abstract: TN0520N3 TN0524N3 TN0604N3 VN02 VN0220N3 VN1210N5 IRF P CHANNEL MOSFET
Contextual Info: TN/TP Series Application Note AN–D2 3 Low-Threshold MOSFETs: Structure, Performance and Applications Punch-through is defined as the drain voltage needed to create an electric field connecting the drain and source, as shown in Figure 2, at voltages less than the actual BVDSS rating.

TN0520N2

Abstract: TN0520N3 TN0520 TN0520ND TN0524 TN0524N3 TN0524ND
Contextual Info: – TN0520 TN0524 Low Threshold – E T E OBSOL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 Die† 200V 10Ω 300mA 1.5V TN0520N2 TN0520N3

Contextual Info: ^S u p e rte x inc. T N 05C Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss / B ^ dgs 200V RdS ON (max) 240V If Standard Commercial Devices Order Number / Package ^G S (th ) (max) TO-39 TO-92 DICE+ io n 300mA 1.5V

Contextual Info: =JU r _ !• TN0520 TN0524 -¿L- Ifjs :. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) ^GS(th) BVdgs (max) (min) (max) TO-39 TO-92 DICE+ 200V 10Q 300mA 1.5V TN0520N2 TN0520N3

TN0520N3

Abstract: TN0520 TN0524 TN0524N3
Contextual Info: TN0520 _ * TN0524 S u p e r te x H J C ._ Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / R d S ON I d (ON) ^G S(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92 200V 10ß 300mA 1.5V

TN0520N3

Abstract: p-channel 200V TN0520 TN0520N2 TN0520ND TN0524 TN0524N2 TN0524N3 TN0524ND
Contextual Info: TN0520 TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 DICE† 200V 10Ω 300mA 1.5V TN0520N2 TN0520N3 TN0520ND 240V 10Ω

TN0520N3

Abstract: mos die TN0520 TN0520N2 TN0520ND TN0524 TN0524N3 TN0524ND
Contextual Info: TN0520 TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) TO-39 TO-92 Die† 200V 10Ω 300mA 1.5V TN0520N2 TN0520N3 TN0520ND 240V 10Ω

Contextual Info: TN0520 TN0524 Low Threshold Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B ^dss ! R d S ON *D(ON) ^G S (th) Order Number / Package b v dgs (max) (min) (max) TO-39 TO-92 Diet 200V 10£2 300mA 1.5V TN0520N2 TN0520N3 TN0520ND

Contextual Info: ^ . Supertex inc T N 05C Low T hreshold N-Channel Enhancement-Mode Vertical OMOS FETs Ordering Information Standard Commercial Devices b v dss / Order Number / Package ^DS ON b(ON) ^GSith) BV dgs (max) (min) (max) TO-39 TO-92 DICEt 200V io n 300mA 1.5V TN0520N2

Contextual Info: 0 ì Supertex inc. TN0520 TN0524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs BVqss / R d S<ON B V Dg s max) 200V 10S2 240V 10Ì2 If Ordering Information Order Number / Package ^G S fth ) (max) TO-39 TO-92 DICE+ 300mA 1.5V TN0520N2 TN0520N3

HV50530PG

Abstract: hv9910p-g TN0604N3 HV5808PJ VN2460N8-G HV-801 HV801 VP0120N5 VN0360N5 TN0520N3
Contextual Info: SUPERTEX INC - OBSOLETE PRODUCT LISTING [JANUARY 2011] Obsolete Part Number 2N6659 2N7007 AN0332CG AP0332CG BSS123 DN2535N2 DN2540N2 DN2620N3 DN2624N3 DN2625K6-G DN2635N3 DN2640N3 HV110K4-G HV111K4 HV1516P HV1616P HV1616PJ HV1816P HV1816PJ HV20220GA HV20220P

PA 0016 PIONEER

Abstract: Pioneer PA 0016 transistors br 6822 MPF104 I9951D Johnson motor 2 607 022 013 2SK109 equivalent V01000J DG5043CK IRF4431
Contextual Info: CT^Siliconix in c o rp o ra te d Introduction Siliconix designs and manufactures semiconductor products that bridge the interface gap between real-world analog signals and the digitally operated microprocessor. Depending on the application, Siliconix provides both discrete