TLT 221 Search Results

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

smd 7636

Abstract: 7636 SMD resistors 1218 tc100 le TLT 221
Contextual Info: Fixed Resistors SM Db TECHNOLOGY SMD Strie» T o le ra n ce 5% 1% PRC 221 2010 2512 5% 2% o n r e q u e s t Pow er PRC t i l 1218 C a se size (P?o) U m ax 1 1% 5% (2% o n re q u e s t ) 1 % (2% o n r e q u e s t l 1W 0.5W 1W 200V 200V 250V i ' E -se rie s

LR7109

Contextual Info: 4 I THJS DftAWJNG IS UNPUBL J5HED. C copyftJâHT 19 3 i BY AHP INCORPORATED. [ .19 RELEASED FOR PUSL IC/UJGN REVISIONS ÛJST 1A ALL RIGHTS RESERVED. de 5c r ;pticn 2EAPR95 REV 8 REDRAW / 0720-0578-95 ML E NB D 22-16 AWG SOLID OR STRANDED 0 4 .34 ± 0 . 0 8

TLT 221

Abstract: 140S2 10MSA marking T08
Contextual Info: SGS-THOMSON T08 A RjflOÊSOIILIiÊTnMODIgi *7M > SENSITIVE GATE TRIACS FEATURES • It RMS = 0-8 A ■ V drm = 200 V to 600 V ■ Ig t S 10 mA ABSOLUTE RATING S (limiting values) Symbol IT(RMS) ITSM Value Unit RMS on-state current (360° conduction a n g le )

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: KM23G2000 G CMOS MASK ROM 2M-BH (256K x 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C2000 is a fully static mask programmable ROM organized 262,144x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •

jalr

Abstract: UPD30111 DSRL32 mips16 instruction set
Contextual Info: ¿¿PD30111 NEC 22. INSTRUCTION SET The V r4111 has two types of instructions: 32-bit instructions MIPS III and 16-bit instructions (MIPS16). 22.1 MIPS III Instruction Each instruction of the MIPS III consists of 1 word (32 bits) located at a word boundary. Three instruction formats

SC35B

Abstract: 40526 SC40B 40528 SC35D SC41B PT40528 PT40530 40529 FIT V2
Contextual Info: T f*£> .3 5 0 '• T yp e No. '• ; *t rms Am p •v D R O M Volts • tS M Am ps 2.5 2,5 2.5 2.5 2.5 -2 .5 3 3 3 3 3 3 3 3 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 10 to 100 200 400 100 200 400 50 100 200 400 50 100

MV1Y

Abstract: mv-1y MC12210 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Serial Input PLL Frequency Synthesizer The MCI 2210 is a 2.5GHz Bipolar monolithic serial input phase locked loop PLL synthesizer with pulse–swallow function. It is designed to provide the high frequency local oscillator signal of an RF transceiver in

LBGH

Contextual Info: SPV-1 500 1500W Single Output Power Supply • s e r ie s Fa-alur-us : f Unrveraa AC inp.,tFut1 ta rg e * ZV-S new lechnoocf ' AC inpul a d we surge current! hmding * & uitt-n i d ve PFC t in c t o n .P F r f .iiS ■ P 'o ie c to ris : S r e r i Qnaufl .■O v e re a ts .-O v s r w > ia s *

114-1010

Abstract: TE 109-27 ti157 MXN-6
Contextual Info: AMP J • 001 Rev. M A R 91 *t m B i? *: (fô AMP m í't'T Æ) ± B * i - • i A • e - 4*Ä $4 i tt 108-5357-1 ^ 1. £ & fö Ü' Æ 15 IS 1.1 1*1 u 4T •> ¿ s ü ^ i i F ig . i o M m > • D -7 9 * 3 * £ ? OSÜDD-ÜBÍ, !£ $ £ ;£ •& > i s , #

220k 400

Abstract: LFC322522T-2R2M
Contextual Info: Leadless Inductors Rated current: 60mA to 1.8A NLC and NLFC Magnetic Shielded Series When compared with its same-sized predecessor NL series inductors, which are designed for use in signal circuits, this series has only half as much DC resistance and twice as much DC current.

eg-1w

Contextual Info: Preliminary Data Sheet No. PD - 9.1664 International I R Rectifier H EXFET TRANSISTORS IRFG5210 3D COMBINATION N AND P CHANNEL 2 EACH 200 Volt, 1.60£2 (N and P channel ) H EXFET _ O D £ d\ G y iP y ¿ s is Product Summary The HEXFET technology is the key to International Rectifier’s P art N u m b e r

c2502c

Abstract: C25-02C 455H5 100012B
Contextual Info: MULTILAYER CHIP NTC THERMISTORS O PE R A TIN G TE M P . -5 5 ~ + 1 2 5 °C ^ 7 D - /W A V E ^ ^ l7 a - /R E R flW ^ •W t 125"C«SZ Guaranteed up to 125°C. ■Large B constant for higher temperature sensing capability. ■Ideal for automatic mounting in bulk or from tapes because of front-rear

Contextual Info: S G S -T H O M S O N RfflD E3 [l [L[l©TriF3@0îDD©@ TDA7335 STEREO PREAMP + AMS + DOLBY B* NOISE REDUCTION PROCESSOR PRODUCT PREVIEW • DUAL CHANNEL PROCESSOR FOR PLAY­ BACK APPLICATIONS. ■ STEREO DOLBY B NR SYSTEM ■ LOW NOISE HEAD PREAM PLIFIER

IRFB40

Contextual Info: Data Sheet No. P06.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Herm etic ■Floatingchanneldesignedforbootstrap Product Summary operation ■ ■ ■ ■ ■ VOFFSET 400V max. lo+/- 200 mA / 420 mA VOUT 1 0 -20V ton/off typ. 675 & 425 ns

AL2005H

Abstract: v562 20MHZ ALC005X ALC00
Contextual Info: 20MHz ~ 170MHz FSPLL AL2005H DECEMBER 1998. Ver1.0 General Description Features The AL2005H is a Phase-Locked Loop PLL frequency synthesizer constructed in CMOS on single monolithic structure. The PLL Macrofunctions provide frequency multiplication capabilities. The output

VR4200

Abstract: capacitor CTC1 VR4000 HPD30450R-80 NEC R4400
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT V r4200 64-BIT MICROPROCESSOR DESCRIPTION The /jPD30450 V r4200 is one of NEC's RISC (Reduced Instruction Set Computer) microprocessors, V r series™, and is a high-perform ance 64-bit m icroprocessor em ploying the RISC architecture developed by

IRF 5408

Abstract: irf 5306 ali 3328 HT 4906 MP 1008 es 3728 lx JRC 3414 mt 5392 JRC 2746 NJU6575C
Contextual Info: NJU6575 4 JM t f y • l l 'T '^ L C D i ■ * n* NJU6575IÌ. t o i i m ' 7 F W LCOK 5Ya* t? , 4, 422t* 'VK D * JFT -iRAM, C P U f ^ it t H B S , XWW ¿’< 4 4 * lil< $ 1 ? m titz tl*? ' 8 f '4 - A 7 W k if c liy 'j7 jl- - i> $ -7 i- ix |c r .c p u * 't > ^

s5 arcnet

Abstract: ATI Research
Contextual Info: ARCNET Local Area Network Standard Copyright c 1990 ARCNET Trade Association 3365 N. Arlington Hts. Rd. Suite J Arlington Heights, IL 60004 (708)255-3003 FAX:(708)577-7276 All rights reserved by the ARCNET Trade Association. Revision History: Version Version

internal structure of ic 4017

Abstract: 4518 CI
Contextual Info: C2MOS Logic TC74HC/HCT Series 7. Common Electrical Characteristics 7-1 Power Dissipation The power dissipation of CMOS device is composed of two components: one static, the other dynamic.The total power dissipation is the sum of static and dynamic power dissipation.

uPD30200 VR4300

Abstract: VR4300 UPD30200GD-100 bc 107 common base h parameters capacitor CTC1 U10504E VR4300TM VR4305 VR4310 UPD30210GD-167-MBB
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200 VR4300 , 30200-133 (VR4305), and 30210 (VR4310)Note are high-performance, 64-bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by MIPS.

FCE17

Abstract: TDA8751T A1GND tda8051 qpsk receiver
Contextual Info: P hilips S em ico n d uctors P roduct sp ecification Q P S K receiver TDA8051 FEATURES G E N E R A L D ES C R IPTIO N • High operating input sensitivity This TDA8051 is a m onolithic b ipolar IC intended for Q uadrature Phase S hift Key Q PSK dem odulation. It

uPD30210-xxx

Abstract: VR4300 upd30200 NEC VR4300 uPD30200 VR4300 capacitor CTC1 VR4310 U10504E VR4300TM VR4305
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD30200, 30210 VR4300TM, VR4305TM, VR4310TM 64-BIT MICROPROCESSOR The µPD30200-100, 30200-133 VR4300 , 30200-80 (VR4305), and 30210 (VR4310) are high-performance, 64bit RISC (Reduced Instruction Set Computer) type microprocessors employing the RISC architecture developed by