TLT Search Results

Temperature sensor to220

Contextual Info: T EL ED Y NE COMPONENTS 3bE D ^ j^ T F I F H V M F • Ô TlTbDZ □ 0 G 7 2 ti 5 3 «TSC PRELIMINARY INFORMATION COMPONENTS 'T k S - iS TC626 SOLID-STATE TEMPERATURE SENSOR FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ ■ The TC626 is a solid-state temperature sensor de­

reverberation IC

Abstract: MN3011 delay line ms-19 MN301 BBD delay line bbd mn3011 SS 3328
Contextual Info: MN3011 MOS 1C, LSI M N 301 1 3328 IS 6 ^ 'y 7 ^ 7 T BBD 3328-Stage 6 T a p Low N oise BBD for Analog Signal Delays • AS S / D e sc rip tio n Unit : mm MN3011 liX f H -, flt-p ^ *■' > M H 9 -7 - f & - l t £ 6 tltt £ F- l , 6 ? ■■/ i t , 9 ^ 3328J5 « B B D X ~ $ „

2N4398

Contextual Info: TEXAS INSTR bE {OPTO} “Ô 9 6 T 7 2 6 TEXAS IN S T R D E | a^tlTHb 003bSò7 <O P T O 62C 36587 r - 3 î ' D l 3 2N4398,2N4399 P-N-P SILICON POWER TRANSISTORS RE V ISE D OCTO BER 19 84 • Designed for Complementary Use With 2N 5301, 2 N 5 3 0 2 • 2 0 0 W a t 25° C Case Temperature

KE25 Oxygen Sensor KE-25

Abstract: KE-50 ke-50 Oxygen Sensor electrochemical gas sensors oxygen gas sensor KE-25 electrochemical oxygen cell sensor
Contextual Info: ^ fi Bi S b ! ttìiit, 101G f4l|L?4fl- 518033 £È i S : U7 5 5 - B3 Ï 75 I I B /B 3 2 7B S Ï 9 / 8 3 2 7 BB6 0 f ë  ; 07S5-fi^792â3 R tltr rw v i É H ip ' iip o I I O S 2 . tû m S e n s flr iis p n I I ù s z c o rn Handling instructions * Prevent co n d e n s a tio n on th e sensing

Contextual Info: I 7 K H £ M 8 Crystal Oscillator • In order to use a crystal oscillator m t u >y t z tz itz M Z (1) ? □ v ^ f f l ' J ^ A aaBfgii£5(ixC-M 0S-IC W l f f l l T (1) The miniature crystal oscillator for the clock utilizes a fc ‘is |$«m (T*tLTLM £II[I]S ££rtjE LT;b'iJ i

Contextual Info: 9097250 TOSHIBA DIS C R E T E / O P T O 39C 0 2 3 5 5 T H Y R IS T O R S T A C K (R R ID fìF D E I ^0^7550 0G0E3SS D | - il TOSHIBA {DISCRETE/OPTO! 33 «TA C K ) 0*7^ 1. STUD TYPE STACK SINGLE-PHASE BRIDGE SF300L4B1, SF300U4B2 Tlte SF300L4B1 and SF300U4B2 series thyristor sta­

SCR-800

Abstract: powerex T9G BP107 C702 P-154
Contextual Info: T9K7 800A Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h d S G C O tltr O l Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 . . SCR 800 Amperes Average 4500 Volts T9K7 800A Phase Control SCR

LT1012 spice model

Abstract: LT1012 500E LT1024
Contextual Info: /'TLTTCAB SPICE MACROMODELS TECHNOLOGY 1X1012 Macromodel Linear Technology LT1012 op amp model with calls for LT1024 Written: 09-05-1989 16:53:38 Type: Bipolar npn input, internal comp. Typical specs: Vos-l.OE-OS, I b = 3 .0E-11, I o s = 2 .0E-11, G B P = 6 .0E+05Hz, Phase mar.= 70 deg,

74l85

Abstract: LI 20 AB 4 bit comparator 7485 7485 comparator 7485 74LS85 4 bit magnitude comparator 74ls85 7485 4-bit magnitude comparator comparator 7485 4 bit magnitude comparator
Contextual Info: - 76- 4-Bit Magnitude Comparator 7485 FUNCTION TABLES Vcc A3 82 A2 At A3 62 A2 A1 B1 AO TltiJtilUJliltiJliilir B3 . vA < 8 A • B A > B/VA > B A - B A < B/ GND |PUT CASCADE INPUTS OUTPUTS 8200 m tpd tpd tpd Icc I1H 11L JIH 1IL 11H III IOH IOL •ax max max

Teledyne Semiconductor

Abstract: TLT-18-2002
Contextual Info: TLT-18-2002 Temperature Compensated Amplifier 2 GHz - 18 GHz This Amplifier offers exceptional performance over the band 2 GHz to 18 GHz with 12 dBm P1dB output power and 16 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

LT1013CN8

Abstract: LT1013 LT1013AM ZO 103 NA
Contextual Info: - 155 |3 J LT1013 •m * m n s 9 A tlty - b y b’ME-.liOu'/ V s-± 1 5 V VCM=0V 0 4 - y - b y I ' W E b ' V y h : 2u V/°C 0^1 y -b y ht£lM:0. 8nA T a-25°C •ii'S *ttfc1t:500/iA • A ^ l t l ! f i I J ± : 0 . 55#Vp-p -t f] V LINEAR TECHNOLOGY ® « ff

INA114AG

Abstract: 1011-Z INA114
Contextual Info: - 252 - IN A 114 f+ifliJ 7 > - f 1 - 1 0 ,0 0 0 i T -io y -i 4 0 V W WEE £ B u r r B ro w n ? tltz T > -7"T-, Z J; 0 a s r - i s . A * i S j T i i i i « £ E « J i l S I i » c J: > ± ± Vcc V,SR ± 18 V T «„t - 4 0 ~ + 1 2 5 ’C i 40V r, 1 5 0 1:

TLT-8-2013

Contextual Info: TLT-8-2013 Temperature Compensated Low Noise Amplifier 2 GHz - 8 GHz This Low Noise Amplifier offers low Noise figure performance of 3.2 dB over the band 2 GHz to 8 GHz with 24 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

TLT-18-6005

Contextual Info: TLT-18-6005 Temperature Compensated Amplifier 6 GHz - 18 GHz This Amplifier offers exceptional performance over the band 6 GHz to 18 GHz with 18 dBm P1dB output power and 26 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

TLT-18-2004

Contextual Info: TLT-18-2004 Temperature Compensated Amplifier 2 GHz - 18 GHz This Amplifier offers exceptional performance over the band 2 GHz to 18 GHz with 12 dBm P1dB output power and 30 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC

Contextual Info: t L/ AN 179 IC AN 179 x u- t i « h m h m u i b k •« S / D e scription an ±, / t v V ideo Signal P ro c e s s in g C ir c u it tru ffila 1791 B T t. ■ 8 t/F e a tu r e s • AGCSftSSclSiftt, tlT ^ 6 • m m : t& m rn m m E m ii iB ]»i^i|ig«-i#0ï# h jm îh * : n m m

a5 gnc

Contextual Info: VHD£5*:*7*-r T u ffile A N AN2611K 2 6 1 1 K VHD Video Disc Player FM Demodulator Circuit Unit: m m AN2611K i,VHD*iC t f i - -Vffl C S f t ? tltc t i<r I>28 2<r I>27 3d I>26 D>25 4« I>24 ^• 6< 5cIr l>23 J>22 2 7C Ì 8<r E*21 D>20 « 9<E io<r D>19 11<I

lm 1470

Abstract: 1470 LM
Contextual Info: AMP 1 4 1 0 - 0 K 1 2 7 J V M I AMPIS07497 li H H JU tN tt - 1 l E U M H H ^ W l l l i T I « - i i me itcw otAm . T n - IOC BIST * lL " " " l "¿I!*« » - R EV IS IO N S r HR »EKRIP1WM MU nu »TO 12-21-00 11:54am tltl! H i l l W

c 5802 transistor

Abstract: 2SD1961 TO-92U D45 TRANSISTOR ic 6802 l04c 2SD1962M 2SD2098 TRANSISTOR c 5802 2SD2097
Contextual Info: h ~7> V 7s $ / T ransistors 2SD1961 /2SD1962M/2SD2097/2SD2098 2SD1961 /2SD1962M 2SD2097/2SD2098 NPN V U =l > h 7 > y X $ Epitaxial Planar NPN Silicon Transistor • rliÈ U /D im en sio n s Unit: mm 1) VcE(sat) VcE(sat)=1V (Max.) Ic / I b = 4 A / 0.1 A tlT ^ - S o

Contextual Info: T*iS 3=A>i% IS UN-JCL i -T T - O CCP»^iCHr cO RELEASED FOR PU3LIC^TION '' ~ b 1 Trco tLtc TRon ICS COf PQF AT ICN IX h L" &IWTS RrSHvfb" FT >r«fp r ~ ok SEfc M A T E R IA LS AND F I N I S H HOUSING: PA 6- 6 , UL 94-VO T E R M IN A L : PHOSPHOR BRONZE,

26C256

Abstract: 26C256-30 29C256-25 28C256-20 28C256-25 CAT28C256
Contextual Info: CATALYST SEMICONDUCTOR MSE D • ntStlS 0001417 7 BiCST T - 9 C - /3 - 2 7 IIIHCRTRLY5T l l l l l i i n i c e N O u c T o i t 223] CALLE DE UJNA. SANTA CUJtA, CA *5054 T tltp k m t: f009 74Ì -7700 CAT28C256 32K x 8 BIT CMOS E2PROM DESCRIPTION The CAT28C256 is a fast, low power, 5V-only

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

BF862

Abstract: bf862 photodiode LT6230-10 LT6230 SFH213 LT1222 LTC6240 jfet "SIT" jfet photodiode bf862 photodiode JFET
Contextual Info: DEMO C IR C U IT 1 4 1 7 LT6230,Q LT6230-10, U IC K S TA R TLTC6240 G U IDE L T 6 2 3 0 , L T 6 2 3 0 -1 0 , L T C 6 2 4 0 L o w N o is e + / -5 V T ra n s im p e d a n c e A m p lifie r DESCRIPTION Demonstration Circuit 1417 is a Low Noise Transipedance Amplifier. It utilizes the low voltage noise

mc 668 L

Abstract: DIP20 NJM2236 NJM2236L NJM2237 T4FM
Contextual Info: NJM2237 A M /F M 5 Í Í * • f l- NJM2237 l ì , AM R F Z P > 7 ', A M S Í t - , AM AG C0S&, F M /A M IF T > -/, F M /A M *~T4 to ■ í# m • « jf F U S lf f i I.8 - 6 .0 V • F M /A M -fc J J ^ 'l' NJH2Z37 D • A M S S A iltt'ttA ^ tlT O á