TLO 70 Search Results

TL-O

Contextual Info: dF TOSHIBA -CDISCRETE/0PT0} | t DT72SD 001707b 5 990 17076 9097250 TOSHIBA COISCRETE/OPTO o T-H I-ai TLO I 53Q, TLO I 54Q GaAsP ORANGE LIGHT EMISSION PANEL CIRCU IT INDICATOR I FEATURES; • SUPER-BRIGHT • All Plastic Mold Type TL0153Q: Light Orange Transparent Lens

tl081

Abstract: tlo81 TL081M tl081 equivalent
Contextual Info: fZ 7 *JM, SGS-THOMSON « r e m r a M D ig s TL081 tlo 8 1 A - tlo 8 1 B GENERAL PURPOSE SINGLE J-FET OPERATIONAL AMPLIFIERS . LOW POWER CONSUMPTION . WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURRENT . OUTPUT SHORT-CIRCUIT PROTECTION

planar photodiodes Silonex

Abstract: SLCD-61N4 SLSD-71N4
Contextual Info: SLCD-61N4 PRELIMINARY Solderable Planar Photodiode ;Tlo n € x Features • Visible to IR spectral irradiance range • High reliability • Oxide passivation • Low capacitance, high speed •0.4 Description The Silonex series of silicon solderable planar

Contextual Info: B tlO l Applications Distinguishing Features 50, 30 M H z Operation T riple 8-bit D /A Converters ±1 LSB D ifferential Linearity Error ±1 LSB Integral L inearity Error G uaranteed M onotonic R S-343A /R S -170-Com patible Outputs TTL -C om patible Inputs

2732A-45

Abstract: SGS-THOMSON M2732AF1 2732AF IP24W m2732a
Contextual Info: [Z Z SGS-THOMSON ^7# M2732A M O iM & tlO itR M O O S 32K 4K x 8 NMOS UV EPROM • FAST ACCESS TIME : 200 ns. ■ 0 TO + 70 °C STANDARD TEMPERATURE RANGE. ■ - 40 TO + 85 °C EXTENDED TEMPERATURE RANGE. ■ SINGLE + 5V POWER SUPPLY. ■ LOW STANDBY CURRENT (35mA MAX).

dtl logic gates

Abstract: 754528 SG506 relay ttl input 12v output dual pole 12V DC Relay SG1644 PIN DIODE DRIVER CIRCUITS logic gates pin configuration RS -12V RELAY relay 12v 0.2a
Contextual Info: SELECTION GUIDE POWER DRIVERS & INTERFACE CIRCUITS SILICON GENEF^L INTERFACE CIRCUITS LINEAR INTEG RATED CIRCUITS D w ritoìyp * SG1488 SQ1489/SG1489A i v PM cilp tlo n Tÿp. Application Quad line-driver • Data communi­ cation interface Quad line re­ ceiver

0/NJM2065A

Contextual Info: DOLBY B C TYPE NOISE REDUCTION PBOCESSOB NJM2065A/NJM2075A The NJM2065A is a low-voltage operating DOLBY B-C-type noise reduction processor IC. The NJM2065A is a suitable tlo the headphone stereo and small cassette tape recorder. The NJM2075A is 250m Vrms decoded output voltage.

03LG

Contextual Info: TOSHIBA TLO H 180P TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InGaAiP ORANGE LIGHT EMISSION TLOH180P Unit in mm 5mm DIAMETER Tl-3/4 InGaAlP ORANGE LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Orange Light Emission Recommended Forward Current : Ijr = l~20mA (DC)

180P

Contextual Info: T O SH IB A TLO H 180P TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InG aAiP ORANGE LIGHT EMISSION TLOH180P 5 mm DIAMETER T l-3/4 InGaAlP ORANGE LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Orange Light Emission Recommended Forward Current : Ip = 1~20 mA (DC)

rG510

Abstract: 50L-060
Contextual Info: 2-Pack IGBT 2MBI50L-060 RUBLE IGBT MODULE L series VX • Outline Drawings ■ Features 2~<t>5A • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p p licatio n s Tab type terminals (AMP N o .tlO equivalent) 3-M5 • Inverter for Motor Drive

00E-12

Contextual Info: TLE2426, TLE2426Y THE “RAIL SPLITTER” PRECISION VIRTUAL GROUND SLOS098B - AUGUST 1991 - REVISED AUGUST 1995 • Excellent Output Regulation 45 nV Typ at Iq = 0 to -1 0 mA - + 1 5 |iV T y p a tlo -0 to + 1 0 m A • 1/2 V| Virtual Ground for Analog Systems

0427

Abstract: LED 7000 mcd
Contextual Info: T O SH IB A TLO H 180P TOSHIBA LED LAMP PANEL CIRCUIT INDICATOR InG aAiP ORANGE LIGHT EMISSION TLOH180P 5 mm DIAMETER T l-3/4 InGaAlP ORANGE LED All Plastic Mold Type. Colorless Clear Lens Low Drive Current, High Intensity Orange Light Emission Recommended Forward Current : Ip = 1~20 mA (DC)

MB8416

Abstract: MB8416-25-W
Contextual Info: FUJITSU MOS Memories • MB8416-25-W CMOS 16,384-Bit Static Random Access Memory D m erlp tlo n The Fujitsu MB8416 is a 2048-word by 8-bit static random access memory fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any state

lu 2705

Abstract: SSL-LX20333LGD
Contextual Info: □ATE REVISIONS 1 0 -9 -9 7 E.C.N. REV t tlO B R D R ,/ A DRAWING N U M B E R REV SSF—LXH5147LGD A ELECTRO-OPTICAL CHARACTERISTICS TA = 2 5 'C PARAMETER 0.5 .0 2 0 MIN PEAK WAVELENGTH FORWARD VOLTAGE REVERSE VOLTAGE I AXIAL INTENSITY 2 .5 4 (,100> MAX

AN-90

Abstract: MM54C175 MM74C175
Contextual Info: February 1988 . M M 54C 175/M M 74C 175 Quad D Flip-Flop General Description All inputs are protected fro m static discharge by diode clam ps to V c c arid GND. The M M 54C 175/M M 74C 175 consists of lo u r positive-edge triggered D type flip-tlo p s im plem ented with m onolithic

LDS-A414RI

Abstract: LDS-A416RI tlo7
Contextual Info: LUflEX OPTO/OOJIPONENTS I N C S IE D • 5 b lb ll3 D Q O O tlO 7 ■ "7- H t 3 3 _ 0,43t r NUMERIC DISPLAYS SINGLE DIGIT SERIES LDS-41X Line Item Lumex Part Number Com. Anode Ta = 25°C Absolute Maximum Ratings Colors Com. Cathode 1 LDS-A411Rl LDS-C411Rl

PA66 GF15

Abstract: PA6 GF15 pst gf15 539-S E103 GF15 PA6.6
Contextual Info: - p - -»Sil V * * *•'• # W l§ li§ . \*l "•• —. :,^:b .\*r 4 .^-TÄ Zeichnung geschützt durch Copyright 197$ AMP DEUTSCHLAND GmbH Alle Rechte Vorbehalten $AME DATUM INDEX ÄNDERUNG 44*0&.Pi K Z $¿4 S3 9 •S 't k fe r k tlo tt *& £ ra s M *

Contextual Info: DMTiML 1Î & 1M S I Final Electrical Specifications LT139/, TECHNOLOGY 7ns, Low Power Single Supply, Ground-Sensin Com parator F€fìTUR€S M a y 1998 D C S C ftlP TlO n • Ultrafast: 7ns ■ Low Power: 6mA ■ Low Offset Voltage: Q.8mV ■ Operates Off Single 5V or Dual ±5V Supplies

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TO S H IB A ÏT < D IS C R E T E /O P T O > 99D DËj| SOTTE SO OD 1 7 111 3 17111 D T -4 l-à | TLO 2 I I GaAsP ORANGE LIGHT EMISSION FEATURES: • Orange All Plastic Mold Type • Rectangular Type Surface Size 2 x4mm • Low Drive Current, High Intensity Orange Light

Contextual Info: R&E INTERNATIONAL. INC 1 800 253-7007 SCL4018B nvioc-tv-N counts* STATIC CHARACTERISTICS: ( Vss - 0 V ) C O N D IT IO N S PARAM ETER Q U IE S C E N T D EV IC E CURRENT V IN “ V S S 0 R V D D lDD Note: * T L O W V DD (Vdc) * M A X M IN tlo w M IN 5 + 2 5*C

mecl 1670

Abstract: MC1696 MC1670 MC1670F MC1600 MC1651 MC1662 MC1668 MC1672 MC1674
Contextual Info: K M DOD G flH G tLO O O INTEGRATED CIRCUITS MC1600 Series -30°C to +85°C The re q u ire m e n t fo r d ig ita l systems w ith ever higher perform ance has increased the need fo r high-speed inte­ grated circu its. The in d u s try has recognized th a t th e o nly

MC1651

Abstract: MC1672L MC1600 MC1662 MC1668 MC1670 MC1672 MC1674 MC1678 MC1688
Contextual Info: K M DOD G flH G tLO O O INTEGRATED CIRCUITS MC1600 Series -30°C to +85°C The re q u ire m e n t fo r d ig ita l systems w ith ever higher perform ance has increased the need fo r high-speed inte­ grated circu its. The in d u s try has recognized th a t th e o nly

Contextual Info: MBRF2035CT - MBRF20200CT TAIWAN SEMICONDUCTOR E RoHS Isolated 20.0 A M PS . Schottky Barrier Rectifiers ITO-220AB C O M P L IA N C E Features <• P te a tc m a teria l i « e d c e n ie e U n d e rw iterE . L e b o re ta iy C laee lflca tlo n a 9 4 V -0

3162E

Abstract: ca3524c
Contextual Info: f H H A R I R I S P o w e r C o n tro l C ir c u it s S E M I C O N D U C T O R HARRIS RCA GE CA1524, CA2524, CA3524 INTERSIL May 1990 A|p p llc a tlo n s : • Complete PWM power control circuitry a Separate outputs tor single-ended or push-pull operation