TL 501 CN Search Results

-20/SMD resistor 474

Abstract: SMD resistor 474 822 smd marking code 4k SMD smd code marking 333 SMD resistor 473 marking code-472 smd 472
Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, X7R Dielectric, 500VDC-10KVDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥1515), SM Series capacitors in X7R dielectric are designed to

mil-std-202, method 204

Abstract: 471 2KV jsm36 varistor+SVC+471
Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500VDC-10KVDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥1515), SM Series capacitors in C0G dielectric are designed to

SMD 392

Abstract: MLCC bias TCC K5-001
Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are

AUK 821

Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, C0G Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in C0G dielectric are

SM36B

Abstract: SMD resistor 474 JIS-C-6429 sm2510 k5001 pF8200 smd 472 resistor K5-001
Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, X7R Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in X7R dielectric are designed to

K5001

Abstract: K5-001 smd 122
Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs KPS HV, Large Case, SM Series, X7R Dielectric, 500 – 10,000 VDC (Industrial Grade) Overview KPS HV (KEMET Power Solutions, High Voltage), Large Case (≥ 1515), SM Series capacitors in X7R dielectric are designed to

Contextual Info: M « rrr^ V m j r *. mrmsm.£ m iÜ iX ^ G fT tl IV If V f ^ 0 Commerce Drive M cntgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1495~3_ RF Â MiCRQWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS • • * » « s ■ C L A S S C T R A N S IS T O R

SBLF10100CT

Abstract: SBLF1030CT-SBLF10100CT SB320-SB3A0 sbl20100 SMD 1N60 RN1Z 1N4139-1N4146 MTZJ 188 US2A-US2M LR kbpc3510
Contextual Info: CONTENTS TABLE OF CONTENTS ……………………C NUMERICAL INDEX ……………………L SYMBOLS AND TERMS ……………………S HIGH RELIABILITY EXPERIMENT ……………………U trr REVERSE RECOVERY TIME MEASUREMENT CIRCUIT ……………………V

K275

Contextual Info: 1CT i 1CT lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT E L E C T R IC A L CDNNECTIDN ARE DMITTED, 2.0 A L L R E S IS T O R S ARE ±5X TDLERANCE. ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 7 - P 6 - P 8 : ( J 3 - J 6 ) (P 1 -P 3 -P 2 ) : (J1 -J2 ) 1CT : 1CT± 3%

96X2

Abstract: NJU501 NJU501CXX bt 1840
Contextual Info: N J U 5 0 1 '> 'J - X 64/— h NJU501 •> U - X I S , T-, 6 4 9 - FOT ROM £ r t / f f H v tii^ t ; ° i T 'S e £: tfX’à i n r * n f-f - ^ t C<t U , - 1C IG .* t , 3 * < 7 ; S # t - F tt, NJU501CXK NJU501MXX m • mM : Mi± ■ ft 3 ffl*I(7)}| I«

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

dash 2b-5

Abstract: BJ70FL Trompeter 305 A71AB BJ73 Trompeter 14949 BJ77
Contextual Info: FID ND PL74 PL75 PL375 PL75FL CJ70TL CJ70 CJ370 CJ70FL BJ79TL BJ79 BJ379 BJ79FL PL71 BJ74TL BJ74 BJ374 BJ74FL 1A 1A IB 1A 2A 2A 2B 2A 3A 3A 3B 3A 4 5A 5A 5B 5A BJ77 1 BJ377 Al 1 A2 1 A3 1 A4 1 A5 1 AB 1 A7 1 AB 1 A9 1 Al 1 A2 1 A3 1 A4 1 A5 1 A5 -1 -25 -49

JIS-C-6429 Appendix 2

Abstract: JESD22 METHOD JA-104 aluminum electrolytic capacitor
Contextual Info: Multilayer Ceramic Capacitors High Voltage One world. One KEMET. Multilayer Ceramic Capacitors High Voltage Table of Contents Page Why Choose KEMET. 3

2SC387

Contextual Info: Power Transistors 2SC3871 2SC3871 Silicon P N P Trip le-D iffu sed Planar Type Package Dim ensions High Breakdown Voltage, High Speed Switching U n it I : • Features 4 .4 m a x . • High speed switching • High collector-base voltage 2.9max, V cbo

HER501

Abstract: HER507
Contextual Info: HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT HER501 THRU HER507 50 to 800 Volts 5.0Ampere DO-27 .052 1.3 .048(1.2) FEATURES • • • • • Low coat construction Fast switching for high efficency. Low reverse leakage High forward surge current capability

MSD 7818

Abstract: MN9106 information applikation 7490 N TDA 5700 information applikation mikroelektronik udssr hefte 143KT1 Mikroelektronik Information Applikation K 176 LE, K 561 LN
Contextual Info: In n in ik ü r Q fâ lI Information Applikation RGW Typen­ übersicht + Vergleich TeiM UdSSR JitfÆÊL JUUUUUUL&JJJUL i m i n i ^ r ^ c z l c i c b p o n Information Applikation , 9 H E F T 4 9 * R G W T y p e n ü b e r s i c h t + V e r g l e i c h Teil 1

Contextual Info: 3Q E D • T 'iS 'ia a ? 0 0 2 ^ 0 1 S G S -T H O M S O N dDg[^ Q i[Li(gTOiö(gi S s * S- ° " * ? ! L S G S P 351 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP351 • • • • VDss 100 V ^DS(on) 0.6 ii 'd 6A HIGH SPEED SWITCHING APPLICATIONS

2N5432

Contextual Info: r ö^lTbOa üQQt.S4e} T 2ÖE D TELEDYNE COMPONENTS ULTRA LOW RON SWITCHING r - z 2N 5433 2N 5434 GEOMETRY 501 .230 M A X . .199 M A X . LOW R d s - 5 Ohms L O W C q d - 1 5 pfd JL a bso lu te m a x im u m PARAM ETER r a t in g s U N IT S SYM BO L D ra in to G ate V oltag e

brq ti

Abstract: BRQ TI 7C
Contextual Info: D National November 1995 Semiconductor </> co 00 •Nl cn DS3875 Futurebus+ Arbitration Controller General Description The DS3875 Futurebus+ Arbitration Controller is a member of National Semiconductor’s Futurebus+ chip set designed specifically for the IEEE 896.1 Futurebus+ standard. The

Contextual Info: NATL SEMICOND {MEMORY} 70 NMC9345/COP495 6 501 1 2 6 N A T L S E M IC O N D , D e | bSQ112b GOSBIMB 70C <M E M O R Y 53142 National Semiconductor NMC9345/COP495 1024-Bit Serial Electrically Erasable Programmable Memory 5V Only) G eneral D escriptio n Features

UL1061 16 AWG

Abstract: Llt 543 CONNECTRON lrct DFL 22
Contextual Info: NC DFll Series 2mm Pitch K\ ton Colltlccto DFI 1 SERIES W Features 1, Saves space on board ‘I‘\\ 0 I-O\b \ 01‘ 2 IIIIII\i ide Dollhtc\ cc~~iip;~rcd ttlC cjit:intiI~ 01 tcrtiiiriat~ arc auxn~?ccl conltxlctl\ in ;I 7 111111 \\ idtti. ~i~~tt4 II itti the con~cntion~lt

80ACPU

Abstract: k747 B452A HJU6452A HJU645ZF NJU6452A NJU645ZA
Contextual Info: CNJ ir a -<- V -> l[\ V • • V ^a- c o A K V ÍN Ih V 3S ÎK g ^ 116 • m u- A ih & V U . IS1 Jig M V iK Û U- -“- <N o -> S' AJ -J co LO lì1 CM S X m V -E ir< -> A _ l 'AJ V °rs £ s X A -5- o jiij •Inc l> - !? S j- U K •> IP n -5 * K * :-' U

ns802

Abstract: 601r3kn
Contextual Info: A dvanced P ow er Te c h n o l o g y O D APT601R3KN APT601R6KN O S 600V 6.5A 1.30Q 600V 5.8A 1.60 £2 POWER MOS IV‘ N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS «Ü ' dm PD V stg All Ratings: TQ = 25°C unless otherwise specified.

C1995

Abstract: DS8187 DS8187N N48A
Contextual Info: DS8187 Vacuum Fluorescent Display Driver General Description Features The DS8187 is a vacuum fluorescent display tube driver This device is implemented in CMOS technology to provide high voltage output drivers and low power Dimming may be accomplished by either analog or digital input Autoload capability is accomplished by connecting the DATA OUT pin to