TL 0299 Search Results

TSP50C42

Abstract: tsp50c4x TSP50C TSP50C41
Contextual Info: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this

Triac t460

Abstract: JE 33 H112 T210 T460 X108 triac BT 0266 8P2SM
Contextual Info: •y — S NEC i Ï T / V f Z r J — «F h A Tc=88°C ¿OfÎItlÊIW TRIACT'fo —;u K T H b tL , ltìl<hlE^È^ÌclÈii:£;flTv>i;1~60T'', i)l> fé ^ S C R a t < t è fëtë, 2 /— 8P2SM, 8P4SM 8P2SMA, 8P4SMA 8Pr jSM, 8Pr jSMA (i, ^ ^ > » 8 IJ — •

A 3020 opto

Abstract: S8201A S3020 TA 3020 ES TA 3020
Contextual Info: TOSHIBA -CDISCRETE/OPTO]- 3T 9097250 TOSHIBA DE t O T T E S O DDODSSfl M (DISCRETE/OPTO 1SyJ5H X -Y ¿ _ 39C 0 0 5 5 8 o O 7" - '/ ) 7 - / / X-Band O s c i l l a t o r and M o d u la to r A p p lic a tio n s ¡Ü ffi Po tl-C-to = 100 mW ( M in .) S 3 0 2 0

M6800 programming manual

Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
Contextual Info: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL

UF460

Abstract: 8 pin ic 3773 PA33 T108 X108 Tc-6173 s11s
Contextual Info: Compound Transistor A if# N 1 A 3 Q St o '< 4 T X Ì È Ì Ì £ 1*1/1 L T ^ R i = 1 .0 kQ , R 2= 10 i - t o kQ o — w v Ri — o A A 1A 3 Q £ n > 7 ° ij y > ? 'J X " itm T è £ w 1 \ v — R2 <» O e (Ta = 25 °C) Tl a& g aE # {ÌL fé n u ? ? •^ - X P I fE

UPD74HC08

Abstract: lt 420 sf 50 gg FE8B
Contextual Info: SEC M o s s i im s s M O S In te g ra te d C ircu it iiT / \ f 7 PD74HC08 QUAD 2 -IN P U T AND G A TE mo c s jii iit m U ¿ 0 - 5 1 t L T H fiP S? tl/tQ U A D 2 -IN P U T AND r - K ^ P D 7 4 H C 0 8 ii, M C M O S n y . y ; 7 r i y •9L S T T L ' j a ^ r -

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

TL 0621 P

Abstract: t4 0560 c TL 0621 N T4 0560 M39006/22-02S1
Contextual Info: I CLR79 MIL-C-39006/22 Wet Tantalum Capacitors M allorY All Tantalum Case Hermetically Sealed GENERAL SPECIFICATIONS Up to 3 Volts Reverse Capability Operating Temperature: -55°C to +125°C Higher Ripple Current Capability Voltage Range: 6 to 125 VDC Capacitance Range:

Contextual Info: I CLR69 MIL-C-39006/21 Wet Tantalum Capacitors M allorY GENERAL SPECIFICATIONS ntalum C a p a c ito rs Silver Case Technology Hermetically Sealed Rugged Construction High Shock and VibrationCapabiiity High Capacitance per Case Size Low DCL and ESR Long Shelf Life

51c7

Abstract: 021F E5B0 SD500 01e3 385 20 mov 51B5 FB E528 UV 471 78L05
Contextual Info: INTEGRATED CIRCUITS AN426 Controlling air core meters with the 87C751 and SA5775 1992 January Revised: Nov 1995 Philips Semiconductors Philips Semiconductors Application note Controlling air core meters with the 87C751 and SA5775 INTRODUCTION SA5775 Serial Gauge Driver

CS 78L05

Abstract: F52F F529 AN426 DMS-10 CS78L05 78L05 80C51 87C751 NE555
Contextual Info: INTEGRATED CIRCUITS AN426 Controlling air core meters with the 87C751 and SA5775 1992 January Revised: Nov 1995 Philips Semiconductors Philips Semiconductors Application note Controlling air core meters with the 87C751 and SA5775 INTRODUCTION SA5775 Serial Gauge Driver

51c7

Abstract: AN426 d9fc 78L05 80C51 83C751 87C751 NE555 SA5775 ne555 timer
Contextual Info: Philips Semiconductors Application note Controlling air core meters with the 87C751 and SA5775 INTRODUCTION SA5775 Serial Gauge Driver Often, certain classes of microcontroller applications surface where large amounts of on-chip resources such as a large program

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TC-6252

Abstract: TC6252 WJ M64
Contextual Info: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m

2SK659

Abstract: TC-6071
Contextual Info: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #

L0836

Abstract: TRANSISTOR C 6090 l5 transistor PNP transistor PNP L5 2SB1217
Contextual Info: SEC Aj Silicon P o w e r Tran sistor n ^ /v rz _ 2 S B 1 2 1 7 PNPX " S ^ > ? PNP Silicon Epitaxial T ran sisto r Audio Frequency A m plifier, M edium Speed Switching U n it : mm ° < , I) f i V c E ( s a t ) T " t ' o L I c(do = —3.0 A, Ic (Puise)=~5.0 A

pw510

Abstract: H150 TC-6178
Contextual Info: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l

uc 4538

Abstract: UC 3245 J5LJ PA606T PA607T YA53
Contextual Info: MOS M O S Field E ffe ct T ra n sisto r «PA606T F E T 6 f c V 2 ^ :?- N f t ^ M O S MOS FE T £ 2 ¿¿PA606T ( i, k t^ m ft w m L fc s (3 M Ï : mm) »3, X T * m o S C - 5 9 s '° " / 'r ~ is tm tV - '( FET £ 2 — MOS l*I/$ o ^ P A 6 0 7 T ¿ 3 > 7 " I)

J196

Abstract: L0836 40t60 2sj196 DF RV transistor 2SK1482
Contextual Info: Mos M O S Field Effect Transistor 2 P 2SJ196 l i P f t ? ' / « izx v -f- > / * MOS FET Ü t &tznb, , y ^ / 1 9 6 9w m m m i f t t » < , x 4 y f- > 'j J MOS F E T MOS FET Z", 5 V'tiJJtiU C ò S &i # a r v* 5.2 MAX -f H jj S T " ì ~ o Œ i t o 5v i c fr b m m m T é t t o

BA1A4P

Abstract: T108 02-WM RSL AH transistorBA1A4P
Contextual Info: r NEC i? f/ \ T A 5 ? — 57 • 5 /— b Compound Transistor BA1A4P ¡g N P N j : t ? ? * '> T JU S fe t # l 3 V V=7> i> X ? it '• mm) ★ Ri = 10 kQ, R2= 47 kQ) o BN1A4P T è t ~t0 lfe;ki*^#(Ta = 25 °C) II n u s ? 9 ?T 3 W ± . v i ; 7 y 3 u 3 ^ ^ ^

2SC3733

Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Contextual Info: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier

transistor Bf 444

Abstract: L4Z marking S6111 MARKING JM transistor EKs 5001FE ab 4455
Contextual Info: h SEC ^ ì ? / t C o m Ÿ 1 * X p o u n d T r a n s is t o r GA1 L4Z f â i i t F*9 l e N P N X f c : ? 4 - ^ 7 ^ Jf2 5 ^ 'J 3 > X ? 4>iÎÆ^'T-y51>^ !» # .{È i t : mm o / M T X tS fit è f*3j%l T v>i f , CRi =47 kQ ) o G N 1 L 4 Z ! : 3 > 7 , | l / > 7 1) - ü t t JS T - ë â 1 " „

TRANSISTOR XL08

Abstract: XL08 TI08 T46C lj11 T 3361 001
Contextual Info: X I • I ÎS NEC m C o m p o u n d T ra n s is to r GN 1L3Z U□ > Y=7>i>^ JS if c r t i P N P x f t 9mH i t * e : mm o '< 4 t (R i = 4 .7 kQ ) B O— W V R, k? — ô E o GA1L3Z t 3 >7° U ^ > ? U T'fêfflT'ë i 1“ c (T a = 25 °C) m 3- 9 ì "/ ^ s

HHB8

Contextual Info: 7— / v fc S * S ' — h* m Com pound Transistor i? T / \ f 7 4# BAI F4N ! mm ★ » o s<4 r x t s t / t £ i*ui l x ^ £ i"c Ri = 22 kfì, R2= 47 k£2) o BN1F4N t ^ > "7° ij / > 9 'J T'féffl T"^ £ i " t Ì 6 Ì Ì * * S # ( T a = 25 °C) il -?- aE #