TKP 24 Search Results

P8800I

Abstract: molex 5558 5559 MOLEX p125l MOLEX 4 pin H6657P H9848P-09-V0 5271 Molex H8508 P825422I-03
Contextual Info: TKP Taiwan Pin terminal Taiwan King Pin Terminal Co. Ltd. Cross Reference 350851-1 350561-1 350866-1 350778-1 350767-1 350780-1 350810-1 350781-1 926308-3 350782-1 926309-3 350783-1 350784-1 350865-1 350777-1 350766-1 350779-1 350809-1 350715-1 640582-1 350720-1

Contextual Info: CONVERSION CHART MM IN C H 0 .0 5 . 002 0 .1 2 0 ,2 5 D 0 .5 0 .6 .005 I .138 4 .8 5 .0 I I 9 .0 I .354 9 .5 I .374 1.3 2 .5 10.0 10.8 11.2 12.0 N I TkP! I .024 3 .5 1.0 I .020 3 .2 0 .9 #4-40 UNC-2B THRU 2X .010 I .031 I .034 I .039 I .051 I .098 I .125 0 .8

P8800I

Abstract: 640445-6 molex Connector 5264 BH1I-1X2 molex 5197 P825422I-03 H6630R1 AMP 1-480702-0 P6657I-04 2563t
Contextual Info: Equivalent connector lists for your reference. TAIWAN KING PIN TERMINAL CO., LTD. No. 23, Jiun Teh St., Shu Lin City, Taipei Hsien, Taiwan, R. O. C. TUV TEL: 886-2-26895596, 26886112 FAX: 886-2-26895569, 26886110 E-MAIL : tkp01@ms8.hinet.net http://www.tkp.com.tw

EN60601-1

Abstract: IEC60601-1 dht 22
Contextual Info: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ Änderungen vorbehalten / subject to change without notice

CXK77B3610GB

Abstract: CXK77B3610GB-6 CXK77B3610GB-7
Contextual Info: CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input

capacitors TKP

Abstract: 200w Transistor h jst 10 connector tkp 24 EN60601-1 IEC60601-1
Contextual Info: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved

mpq-200c

Abstract: tkp dh2 DHT 11 EM 2A 500VA 1500VA N6060 MPQ-200F MPX200 15V 20A led
Contextual Info: MPx-200 Series Low Cost, 1-4 Output 200W EN60601 Medical Approved AC/DC Power Supplies Key Features: • Universal AC Input - Full Range • EN60601, UL2601 (Medical) Approved • 200W Ouput Power • Low Leakage Current, <180 µA • Power Good/ Power Fail Output Signals

UL1007

Abstract: AWG18 AWG20 AWG 24 UL1007 H6657P UL1007 20 awg UL-1007 UL1007 AWG18 tkp 24
Contextual Info: SWITCHING POWER SUPPLY D AWG AWG D #16 <1.8 #18 <1.8 #20 <1.5 #22 <1.2 DOC No Date 線 材 規 格 圖 WIRING HARNESS #24 <1.0 #26 <1.0 TWISTED TWISTED & HALF TIN DIPPED TWISTED & FULL TIN DIPPED FB-OT-S54 2002.12.26 REV A1 UNIT mm 料號 Tolerance MODEL CUSTOMER

DQ100

Abstract: transistor d514
Contextual Info: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

K1C1616B8B

Contextual Info: K1C1616B8B UtRAM2 16Mb 1M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

104M

Abstract: N64T1618CBA
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N64T1618CBA Advance Information 64Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N64T1618CBA is an integrated memory

BCR150

Abstract: 104M N32T1618CBB
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N32T1618CBB Advance Information 32Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N32T1618CBB is an integrated memory

Contextual Info: K1C6416B2D UtRAM2 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

W967d6hb

Abstract: W967 CRAM 256mb
Contextual Info: W967D6HB 128Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

Contextual Info: 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC 1.70V–3.30V VCCQ1

W968D6DAG

Contextual Info: W968D6DA 256Mb Async./Page,Syn./Burst CellularRAM 1. GENERAL DESCRIPTION Winbond CellularRAM products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT BDQ8 CSP3-20
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

Contextual Info: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages – 1.70–1.95V VCC – 1.7–3.3V1 VCCQ

Contextual Info: Preliminary‡ 64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAMTM 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.70V–1.95V VCC

Contextual Info: 128 Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–3.3V1 VCCQ

61800513722

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS 0.00 0.00 1.50 R0.25 ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 85°C FLAMABILITY RATING: UL94-V0 COMPLIANCE: LEAD FREE AND ROHS 0.80 3.00 30.00 4.09 4.27 A MATERIAL CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED