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    TK7A90E Search Results

    TK7A90E Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK7A90E,S4X
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO220SIS Original PDF 9
    SF Impression Pixel

    TK7A90E Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7A90E,S4X

    MOSFET N-CH 900V 7A TO220SIS
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    DigiKey TK7A90E,S4X Tube 45 1
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    Avnet Americas TK7A90E,S4X Tube 16 Weeks 50
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    Mouser Electronics TK7A90E,S4X 327
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    Toshiba America Electronic Components TK7A90E,S4X(S)

    Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-220SIS Tube
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    Verical TK7A90E,S4X(S) 95 53
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    Toshiba America Electronic Components TK7A90E,S4X(S

    Mosfet, N-Ch, 900V, 7A, To-220Sis; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Toshiba TK7A90E, S4X(S
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    Newark TK7A90E,S4X(S Bulk 10 1
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    TME TK7A90E,S4X(S 1
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    Avnet Asia TK7A90E,S4X(S 24 Weeks 50
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    Chip Stock TK7A90E,S4X(S 110,630
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    EBV Elektronik TK7A90E,S4X(S 19 Weeks 50
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    Toshiba America Electronic Components TK7A90E

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    Chip Stock TK7A90E 32,139
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    Win Source Electronics TK7A90E 28,639
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    Toshiba America Electronic Components TK7A90ES4X(S

    N-ch 900V 7A 1600MOHM TO220FP
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    Win Source Electronics TK7A90ES4X(S 98,130
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    TK7A90E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7A90E O-220SIS PDF

    Contextual Info: TK7A90E MOSFETs Silicon N-Channel MOS π-MOS TK7A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7A90E O-220SIS PDF

    gt50jr22

    Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
    Contextual Info: System Catalog May 2014 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g –2 Types and Applications of Switching Power Supplies Types of DC-DC converters embedded in various


    Original     		SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W PDF