TK6A80E Search Results
TK6A80E Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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TK6A80E,S4X |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V TO220SIS | Original | 9 |
TK6A80E Price and Stock
Toshiba America Electronic Components TK6A80E,S4XMOSFET N-CH 800V 6A TO220SIS |
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TK6A80E,S4X | Tube | 17 | 1 |
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TK6A80E,S4X | Tube | 16 Weeks | 50 |
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TK6A80E,S4X | 170 |
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TK6A80E,S4X | 30 |
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Toshiba America Electronic Components TK6A80E,S4X(STrans MOSFET N-CH Si 800V 6A 3-Pin(3+Tab) TO-220SIS |
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TK6A80E,S4X(S | 26 | 26 |
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TK6A80E,S4X(S | Bulk | 40 | 1 |
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TK6A80E,S4X(S | 136 | 1 |
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TK6A80E,S4X(S | 19 Weeks | 50 |
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Toshiba America Electronic Components TK6A80EMOSFET SILICON N-CHANNEL MOS (PI-MOSVIII) Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK6A80E | 250 |
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TK6A80E | 80,533 |
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TK6A80E | 68,033 |
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TK6A80E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TK6A80E MOSFETs Silicon N-Channel MOS π-MOS TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA) |
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TK6A80E O-220SIS | |
Contextual Info: TK6A80E MOSFETs Silicon N-Channel MOS π-MOS TK6A80E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA) |
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TK6A80E O-220SIS | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W |