TK31 Search Results
TK31 Datasheets (35)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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TK31 | Unknown | Shortform Transistor Datasheet Guide | Short Form | 91.86KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31 | Unknown | Discontinued Transistor Data Book 1975 | Scan | 187.63KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK310 | Silec Semiconductors | Shortform Data Book 1976 | Short Form | 56.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3100 | Silec Semiconductors | Shortform Data Book 1976 | Short Form | 56.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3120 | Silec Semiconductors | Shortform Data Book 1976 | Short Form | 56.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3140 | Silec Semiconductors | Shortform Data Book 1976 | Short Form | 56.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK3160 | Silec Semiconductors | Shortform Data Book 1976 | Short Form | 56.4KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31A60W |
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TK31A60 - TRANSISTOR POWER, FET, FET General Purpose Power | Original | 256.17KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31A60W |
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Transistors - Mosfets | Original | 256.16KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31A60W |
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Japanese - Transistors - Mosfets | Original | 347.49KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31A60W,S4VX |
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TK31A60 - Power MOSFET - Nch 500V VDSS 700V | Original | 256.16KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31C | Unknown | Discontinued Transistor Data Book 1975 | Scan | 187.63KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31D | Unknown | Shortform Transistor Datasheet Guide | Short Form | 91.86KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31E60W |
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TK31E60W - Nch 500V Original |
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263.6KB |
10 |
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TK31E60W |
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Japanese - Transistors - Mosfets | Original | 355.75KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31E60W |
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Transistors - Mosfets | Original | 263.59KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31E60W,S1VX |
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TK31E60 - Power MOSFET - Nch 500V VDSS 700V | Original | 263.59KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31E60X,S1X |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V TO-220 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK31J60W |
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TK31J60W - Nch 500V Original |
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256.87KB |
10 |
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TK31J60W |
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Japanese - Transistors - Mosfets | Original | 350.36KB | 10 |
TK31 Price and Stock
onsemi NTK3139PT1GMOSFET P-CH 20V 660MA SOT723 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTK3139PT1G | Reel | 64,000 | 4,000 |
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NTK3139PT1G | Reel | 40,000 | 20 Weeks | 4,000 |
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NTK3139PT1G | Reel | 40,000 | 4,000 |
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NTK3139PT1G | 3,151 | 13 |
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NTK3139PT1G | 4,000 | 1 |
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NTK3139PT1G | 12,000 |
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NTK3139PT1G | 2,659 |
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NTK3139PT1G | 20 Weeks | 24,000 |
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NTK3139PT1G | 21 Weeks | 4,000 |
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NTK3139PT1G | 301,000 |
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NTK3139PT1G | 854 |
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NTK3139PT1G | 4,000 | 22 Weeks | 4,000 |
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NTK3139PT1G | 804,000 |
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NTK3139PT1G | 48,000 |
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NTK3139PT1G | 896,000 | 1 |
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NTK3139PT1G | 139,519 |
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NTK3139PT1G | 288,500 |
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NXP Semiconductors TJA1051TK-3-1JIC TRANSCEIVER HALF 1/1 8HVSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TJA1051TK-3-1J | Reel | 12,000 | 6,000 |
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C&K Switches PTS641TK31SMTR2LFSSWITCH TACTILE SPST-NO 0.05A 12V |
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PTS641TK31SMTR2LFS | Cut Tape | 10,804 | 1 |
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PTS641TK31SMTR2LFS | Bulk | 9,000 | 1,500 |
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NXP Semiconductors TJA1042TK-3-1JIC TRANSCEIVER HALF 1/1 8HVSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TJA1042TK-3-1J | Digi-Reel | 8,839 | 1 |
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NXP Semiconductors TJA1042TK-3,118IC TRANSCEIVER HALF 1/1 8HVSON |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TJA1042TK-3,118 | Cut Tape | 8,088 | 1 |
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TK31 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS |
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TK31J60W5 | |
Contextual Info: TK31A60W MOSFET シリコンNチャネルMOS形 DTMOS TK31A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2) |
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TK31A60W O-220SIS | |
Contextual Info: TK31J60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。 : trr = 135 ns (typ.) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.082 Ω (標準) |
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TK31J60W5 | |
Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS |
Original |
TK31J60W5 | |
Contextual Info: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) |
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TK31A60W O-220SIS | |
Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS |
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TK31J60W5 | |
Contextual Info: TK31N60X MOSFETs Silicon N-Channel MOS DTMOS TK31N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. |
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TK31N60X O-247 | |
Contextual Info: TK31J60W MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2) |
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TK31J60W | |
Contextual Info: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) |
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TK31N60W O-247 | |
Contextual Info: TK31E60X MOSFETs Silicon N-Channel MOS DTMOS-H TK31E60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. |
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TK31E60X O-220 | |
Contextual Info: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
Original |
TK31N60W O-247 | |
Contextual Info: TK31N60W MOSFET シリコンNチャネルMOS形 DTMOS TK31N60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2) |
Original |
TK31N60W O-247 | |
Contextual Info: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK31E60W O-220 | |
Contextual Info: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK31E60W O-220 | |
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Contextual Info: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) |
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TK31J60W | |
Contextual Info: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
Original |
TK31A60W O-220SIS | |
Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by using Super Junction Structure : DTMOS |
Original |
TK31J60W5 | |
Contextual Info: TK31E60W MOSFET シリコンNチャネルMOS形 DTMOS TK31E60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2) |
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TK31E60W O-220 | |
TK31
Abstract: Toggle Switches 3A120VAC T6N 600
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TK31S6 TK31S1A1B1T1_ TK31S1A2B2T6_ TK31S1A2B2T7_ TK31 Toggle Switches 3A120VAC T6N 600 | |
Contextual Info: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK31V60W | |
Contextual Info: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
Original |
TK31J60W | |
Contextual Info: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
Original |
TK31V60W | |
Contextual Info: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) |
Original |
TK31E60W O-220 | |
Contextual Info: TK31N60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS |
Original |
TK31N60W5 O-247 |