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    TK31 Datasheets (35)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK31
    		Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.86KB 1
    TK31
    		Unknown Discontinued Transistor Data Book 1975 Scan PDF 187.63KB 2
    TK310
    		Silec Semiconductors Shortform Data Book 1976 Short Form PDF 56.4KB 1
    TK3100
    		Silec Semiconductors Shortform Data Book 1976 Short Form PDF 56.4KB 1
    TK3120
    		Silec Semiconductors Shortform Data Book 1976 Short Form PDF 56.4KB 1
    TK3140
    		Silec Semiconductors Shortform Data Book 1976 Short Form PDF 56.4KB 1
    TK3160
    		Silec Semiconductors Shortform Data Book 1976 Short Form PDF 56.4KB 1
    TK31A60W
    		Toshiba TK31A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF 256.17KB 10
    TK31A60W
    		Toshiba Transistors - Mosfets Original PDF 256.16KB 10
    TK31A60W
    		Toshiba Japanese - Transistors - Mosfets Original PDF 347.49KB 11
    TK31A60W,S4VX
    		Toshiba TK31A60 - Power MOSFET - Nch 500V VDSS 700V Original PDF 256.16KB 10
    TK31C
    		Unknown Discontinued Transistor Data Book 1975 Scan PDF 187.63KB 2
    TK31D
    		Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.86KB 1
    TK31E60W
    		Toshiba TK31E60W - Nch 500V Original PDF 263.6KB 10
    TK31E60W
    		Toshiba Japanese - Transistors - Mosfets Original PDF 355.75KB 10
    TK31E60W
    		Toshiba Transistors - Mosfets Original PDF 263.59KB 10
    TK31E60W,S1VX
    		Toshiba TK31E60 - Power MOSFET - Nch 500V VDSS 700V Original PDF 263.59KB 10
    TK31E60X,S1X
    		Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V TO-220 Original PDF 10
    TK31J60W
    		Toshiba TK31J60W - Nch 500V Original PDF 256.87KB 10
    TK31J60W
    		Toshiba Japanese - Transistors - Mosfets Original PDF 350.36KB 10
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    TK31 Price and Stock

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    onsemi NTK3139PT1G

    Transistor: P-MOSFET; unipolar; -20V; -0.57A; 0.45W; SOT723
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    TME NTK3139PT1G 4,000 1
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    Bristol Electronics NTK3139PT1G 6,165 1
    • 1 $0.30
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    Chip 1 Exchange NTK3139PT1G 2,659
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    Avnet Asia NTK3139PT1G 68 Weeks 24,000
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    Avnet Silica NTK3139PT1G 53 Weeks 4,000
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    Component Electronics, Inc NTK3139PT1G 854
    • 1 $3.85
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    EBV Elektronik NTK3139PT1G 53 Weeks 4,000
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    Master Electronics NTK3139PT1G 34,750
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    Win Source Electronics NTK3139PT1G 119,588
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    Toshiba America Electronic Components TK31E60W,S1VX(S

    Transistor: N-MOSFET; unipolar; 600V; 30.8A; 230W; TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME TK31E60W,S1VX(S 19 1
    • 1 $4.43
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    EBV Elektronik TK31E60W,S1VX(S 23 Weeks 50
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    KING TONY 9TK316

    Crowbar; 405mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 9TK316 6 1
    • 1 $14.97
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    KING TONY 9TK312

    Crowbar; 305mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 9TK312 4 1
    • 1 $10.80
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    onsemi NTK3134NT1G

    Transistor: N-MOSFET; unipolar; 20V; 0.64A; 0.45W; SOT723
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME NTK3134NT1G 1
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    RS NTK3134NT1G Bulk 50
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    Bristol Electronics NTK3134NT1G 28,213 1
    • 1 $0.75
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    • 100 $0.38
    • 1000 $0.15
    • 10000 $0.09
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    Avnet Asia NTK3134NT1G 68 Weeks 36,000
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    Avnet Silica NTK3134NT1G 53 Weeks 4,000
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    EBV Elektronik NTK3134NT1G 53 Weeks 4,000
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    Master Electronics NTK3134NT1G
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    Win Source Electronics NTK3134NT1G 87,000
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    Find more TK31 price and stock on Findchips.com

    TK31 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		tk31j60w5 PDF

    Contextual Info: TK31A60W MOSFET シリコンNチャネルMOS形 DTMOS TK31A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original     		tk31a60wo-220sis PDF

    Contextual Info: TK31J60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。 : trr = 135 ns (typ.) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.082 Ω (標準)


    Original     		tk31j60w5 PDF

    Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		tk31j60w5 PDF

    Contextual Info: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original     		tk31a60wo-220sis PDF

    Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		tk31j60w5 PDF

    Contextual Info: TK31N60X MOSFETs Silicon N-Channel MOS DTMOS TK31N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.


    Original     		tk31n60xo-247 PDF

    Contextual Info: TK31J60W MOSFET シリコンNチャネルMOS形 DTMOS TK31J60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original     		tk31j60w PDF

    Contextual Info: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original     		tk31n60wo-247 PDF

    Contextual Info: TK31E60X MOSFETs Silicon N-Channel MOS DTMOS-H TK31E60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance.


    Original     		tk31e60xo-220 PDF

    Contextual Info: TK31N60W MOSFETs Silicon N-Channel MOS DTMOS TK31N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31n60wo-247 PDF

    Contextual Info: TK31N60W MOSFET シリコンNチャネルMOS形 DTMOS TK31N60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original     		tk31n60wo-247 PDF

    Contextual Info: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31e60wo-220 PDF

    Contextual Info: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31e60wo-220 PDF

    Contextual Info: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original     		tk31j60w PDF

    Contextual Info: TK31A60W MOSFETs Silicon N-Channel MOS DTMOS TK31A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31a60wo-220sis PDF

    Contextual Info: TK31J60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by using Super Junction Structure : DTMOS


    Original     		tk31j60w5 PDF

    Contextual Info: TK31E60W MOSFET シリコンNチャネルMOS形 DTMOS TK31E60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)


    Original     		tk31e60wo-220 PDF

    TK31

    Abstract: Toggle Switches 3A120VAC T6N 600
    Contextual Info: Toggle Switches Sub-Miniature SPDT Toggle Switches TK31 Series Toggle Switches EPOXY SEAL 5.59 0.51 4.06 Ø2.54 EPOXY SEAL 4.93 2.54 0.51 1.52 4.01 8.64 9.40 5.08 0.76 3.30 0.76 0.41 2.80 5.59 8.13 5.08 Ø6.00 FLAT 2.54 4.39 8.13 5.08 TK31S6 Omit second terminal


    Original     		tk31s6tk31s1a1b1t1_tk31s1a2b2t6_tk31s1a2b2t7_+4tk31toggle switches3a120vact6n 600 PDF

    Contextual Info: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31v60w PDF

    Contextual Info: TK31J60W MOSFETs Silicon N-Channel MOS DTMOS TK31J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31j60w PDF

    Contextual Info: TK31V60W MOSFETs Silicon N-Channel MOS DTMOS TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		tk31v60w PDF

    Contextual Info: TK31E60W MOSFETs Silicon N-Channel MOS DTMOS TK31E60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA)


    Original     		tk31e60wo-220 PDF

    Contextual Info: TK31N60W5 MOSFETs Silicon N-Channel MOS DTMOS TK31N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.082 Ω (typ.) by used to Super Junction Structure : DTMOS


    Original     		tk31n60w5o-247 PDF