TK16G60W Search Results
TK16G60W Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TK16G60W |
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TK16G60W - Nch 500V | Original |
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245.18KB |
10 |
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| TK16G60W |
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Japanese - Transistors - Mosfets | Original | 341.74KB | 10 | ||
| TK16G60W |
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Transistors - Mosfets | Original | 245.18KB | 10 | ||
| TK16G60W5 |
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Transistors - Mosfets | Original | 248.85KB | 10 | ||
| TK16G60W5 |
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Japanese - Transistors - Mosfets | Original | 351.4KB | 10 | ||
| TK16G60W5,RVQ |
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PB-F POWER MOSFET TRANSISTOR DPA | Original | 249.26KB | 10 | ||
| TK16G60W,RVQ |
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TK16G60 - Power MOSFET - Nch 500V VDSS 700V | Original | 245.17KB | 10 |
TK16G60W Price and Stock
Toshiba America Electronic Components TK16G60W5,RVQPB-F POWER MOSFET TRANSISTOR DPA |
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TK16G60W5,RVQ | Digi-Reel | 1,288 | 1 |
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TK16G60W5,RVQ | Reel | 16 Weeks | 1,000 |
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TK16G60W5,RVQ | 991 |
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Toshiba America Electronic Components TK16G60W,RVQMOSFET N CH 600V 15.8A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK16G60W,RVQ | Cut Tape | 981 | 1 |
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TK16G60W,RVQ | Reel | 16 Weeks | 1,000 |
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TK16G60W,RVQ |
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Toshiba America Electronic Components TK16G60W,RVQ(STrans MOSFET N-CH Si 600V 15.8A 3-Pin(2+Tab) D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK16G60W,RVQ(S | 1,000 | 37 |
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TK16G60W,RVQ(S | Cut Tape | 1,866 | 1 |
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TK16G60W,RVQ(S | 12 Weeks | 1 |
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TK16G60W,RVQ(S | Cut Tape | 1,000 | 0 Weeks, 1 Days | 1 |
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TK16G60W,RVQ(S | 33 Weeks | 1,000 |
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Toshiba America Electronic Components TK16G60W5,RVQ(SMosfet, N-Ch, 600V, 15.8A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Toshiba TK16G60W5,RVQ(S |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK16G60W5,RVQ(S | Cut Tape | 2,040 | 1 |
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Buy Now | |||||
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TK16G60W5,RVQ(S | 33 Weeks | 1,000 |
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TK16G60W Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS |
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TK16G60W5 | |
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Contextual Info: TK16G60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16G60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS |
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TK16G60W5 | |
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Contextual Info: TK16G60W5 MOSFET シリコンNチャネルMOS形 DTMOS TK16G60W5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い: trr = 100 ns (標準) (2) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.18 Ω (標準) |
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TK16G60W5 | |
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Contextual Info: TK16G60W MOSFETs Silicon N-Channel MOS DTMOS TK16G60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK16G60W | |
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Contextual Info: TK16G60W MOSFET シリコンNチャネルMOS形 DTMOS TK16G60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.16 Ω (標準) (2) |
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TK16G60W | |
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Contextual Info: TK16G60W MOSFETs Silicon N-Channel MOS DTMOS TK16G60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
Original |
TK16G60W | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 |