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    TK100 Search Results

    TK100 Datasheets (50)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TK100
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.86KB 1
    TK-100-0050
    Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 50NS MAX Scan PDF 86.44KB 1
    TK-100-0075
    Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 75NS MAX Scan PDF 86.44KB 1
    TK-100-0100
    Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 100NS MAX Scan PDF 86.44KB 1
    TK-100-0150
    Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 150NS MAX Scan PDF 86.44KB 1
    TK-100-0250
    Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 250NS MAX Scan PDF 86.44KB 1
    TK-100-0500
    Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 500NS MAX Scan PDF 86.44KB 1
    TK1000A-R015
    Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000B-N000
    Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000B-R015
    Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000N-N000
    Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1000N-R015
    Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF 181.69KB 2
    TK1005800000G
    Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 10P SIDE ENTRY 5MM PCB Original PDF 81.32KB
    TK100A06N1
    Toshiba TK100A06N1 - Nch 30V Original PDF 236.03KB 9
    TK100A06N1
    Toshiba Japanese - Transistors - Mosfets Original PDF 340.68KB 9
    TK100A06N1
    Toshiba Transistors - Mosfets Original PDF 235.92KB 9
    TK100A06N1,S4X
    Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO-220 Original PDF 9
    TK100A08N1
    Toshiba TK100A08N1 - Nch 60V Original PDF 237.05KB 9
    TK100A08N1
    Toshiba Transistors - Mosfets Original PDF 237.96KB 9
    TK100A08N1
    Toshiba Japanese - Transistors - Mosfets Original PDF 343.83KB 9
    SF Impression Pixel

    TK100 Price and Stock

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    Toshiba America Electronic Components TK100S04N1L,LXHQ

    MOSFET N-CH 40V 100A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () TK100S04N1L,LXHQ Digi-Reel 3,209 1
    • 1 $1.69
    • 10 $1.35
    • 100 $0.97
    • 1000 $0.76
    • 10000 $0.76
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    TK100S04N1L,LXHQ Cut Tape 3,209 1
    • 1 $1.69
    • 10 $1.35
    • 100 $0.97
    • 1000 $0.76
    • 10000 $0.76
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    TK100S04N1L,LXHQ Reel 2,000 2,000
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    • 10000 $0.64
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    Avnet Americas TK100S04N1L,LXHQ Reel 2,000
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    Mouser Electronics TK100S04N1L,LXHQ 17,367
    • 1 $1.66
    • 10 $1.32
    • 100 $0.95
    • 1000 $0.74
    • 10000 $0.64
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    Toshiba America Electronic Components TK100S04N1L,LQ

    MOSFET N-CH 40V 100A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () TK100S04N1L,LQ Cut Tape 2,814 1
    • 1 $3.51
    • 10 $2.29
    • 100 $1.60
    • 1000 $1.39
    • 10000 $1.39
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    TK100S04N1L,LQ Digi-Reel 2,814 1
    • 1 $3.51
    • 10 $2.29
    • 100 $1.60
    • 1000 $1.39
    • 10000 $1.39
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    Avnet Americas TK100S04N1L,LQ Reel 16 Weeks 2,000
    • 1 -
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    • 10000 $1.19
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    Mouser Electronics TK100S04N1L,LQ 3,789
    • 1 $3.50
    • 10 $2.28
    • 100 $1.60
    • 1000 $1.29
    • 10000 $1.13
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    Toshiba America Electronic Components TK100E10N1,S1X

    MOSFET N-CH 100V 100A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100E10N1,S1X Tube 1,840 1
    • 1 $4.70
    • 10 $4.70
    • 100 $2.46
    • 1000 $2.22
    • 10000 $2.22
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    Mouser Electronics TK100E10N1,S1X 338
    • 1 $4.61
    • 10 $2.70
    • 100 $2.41
    • 1000 $2.22
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    Verical TK100E10N1,S1X 4 4
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    Arrow Electronics () TK100E10N1,S1X 4 16 Weeks 50
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    TK100E10N1,S1X 3 1
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    TTI TK100E10N1,S1X Tube 50
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    Vyrian TK100E10N1,S1X 771
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    Amphenol Sine Systems AUTK-100

    UNIVERSAL HEAVY DUTY CONTACT CRI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUTK-100 Box 101 1
    • 1 $247.37
    • 10 $227.33
    • 100 $210.74
    • 1000 $210.74
    • 10000 $210.74
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    Newark AUTK-100 Bulk 90 1
    • 1 $234.10
    • 10 $234.10
    • 100 $234.10
    • 1000 $234.10
    • 10000 $234.10
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    Interstate Connecting Components AUTK-100 17
    • 1 $266.95
    • 10 $249.44
    • 100 $245.42
    • 1000 $245.42
    • 10000 $245.42
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    Master Electronics AUTK-100 18
    • 1 $192.43
    • 10 $183.18
    • 100 $180.45
    • 1000 $177.75
    • 10000 $177.75
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    Waytek, Inc. AUTK-100 44 11 Weeks, 4 Days 1
    • 1 $310.99
    • 10 $297.66
    • 100 $297.66
    • 1000 $297.66
    • 10000 $297.66
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    Toshiba America Electronic Components TK100E08N1,S1X

    MOSFET N-CH 80V 100A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100E08N1,S1X Tube 96 1
    • 1 $5.10
    • 10 $5.10
    • 100 $2.66
    • 1000 $2.22
    • 10000 $2.22
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    Avnet Americas TK100E08N1,S1X Tube 16 Weeks 50
    • 1 -
    • 10 -
    • 100 $2.57
    • 1000 $2.22
    • 10000 $2.22
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    Mouser Electronics TK100E08N1,S1X 108
    • 1 $5.00
    • 10 $2.62
    • 100 $2.61
    • 1000 $2.22
    • 10000 $2.22
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    Vyrian TK100E08N1,S1X 45
    • 1 -
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    TK100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


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    TK100F04K3L AEC-Q101 O-220SM PDF

    K100F06K

    Abstract: TK100 TK100F06K3
    Contextual Info: TK100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV TK100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。


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    TK100F06K3 K100F06K TK100 TK100F06K3 PDF

    Contextual Info: TK100A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


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    TK100A06N1 O-220SIS PDF

    Contextual Info: TK100A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 3.1 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)


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    TK100A10N1 O-220SIS PDF

    Contextual Info: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


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    TK100E10N1 O-220 PDF

    Contextual Info: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    TK100E06N1 O-220 PDF

    Contextual Info: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original
    TK100F04K3 PDF

    TK100L60W

    Abstract: 2-21F1S
    Contextual Info: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


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    TK100L60W TK100L60W 2-21F1S PDF

    Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


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    TK100F04K3L O-220SM PDF

    Contextual Info: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


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    TK100A08N1 O-220SIS PDF

    Contextual Info: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    TK100E06N1 O-220 PDF

    Contextual Info: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    TK100A06N1 O-220SIS PDF

    Contextual Info: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original
    TK100E10N1 O-220 PDF

    Contextual Info: TK100E08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.6 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V)


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    TK100E08N1 O-220 PDF

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Contextual Info: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


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    TK100F06K3 toshiba transistor date code marking TK100F06K3 K100F06K PDF

    Contextual Info: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original
    TK100E08N1 O-220 PDF

    Contextual Info: TK100E06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 1.9 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original
    TK100E06N1 O-220 PDF

    Contextual Info: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original
    TK100F06K3 PDF

    Contextual Info: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original
    TK100A10N1 O-220SIS PDF

    Contextual Info: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


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    TK100A06N1 O-220SIS PDF

    Contextual Info: TK100S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK100S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


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    TK100S04N1L PDF

    Contextual Info: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


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    TK100E08N1 O-220 PDF

    Contextual Info: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original
    TK100E06N1 O-220 PDF

    Contextual Info: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK100L60W PDF