TK 69 TSOP Search Results

1kx16

Abstract: diode wb1 SCR table TK 69 TSOP
Contextual Info: MITSUBISHI LSIs M5M4V16169DTP/RT-7,-8,-10,-15 16MCDRAM:16M 1M-WORD BY 16-BIT CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION

Contextual Info: SIEMENS 3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module HYS64V2000GU HYS72V2000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 2M x 64, 2M x 72 organisation

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165AT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-Version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165AT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS 3.3V 1M X 64-Bit EDO-DRAM Module 3.3V 1M X 72-Bit EDO-DRAM Module HYM64V1005GU-50/-60/-70 HYM72V1005GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

TK 69 TSOP

Abstract: 1024KX16 M5M4V16169RT-10 1-OF-128 7WB1 AD011 M5M4V16169TP-10
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice.

Contextual Info: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V40 1 20GU HYS72V40(1)20GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation

Contextual Info: SIEMENS 3.3V 1M x 64-Bit SDRAM Module 3.3V 1M x 72-Bit SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation

Contextual Info: SIEMENS 3.3V 1 M x 6 4 -B it SDRAM Module 3.3V 1 M x 7 2 -B it SDRAM Module HYS64V1000GU HYS72V1000GU 168 pin unbuffered DIMM Modules Preliminary Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 1 bank 1M x 64, 1M x 72 organisation

Contextual Info: MITSUBISHI LS Is TARGET SPEC REV. 2.0 M5M4V16169RT-10,-12,-15 16MCDRAM:16M(1024K-WQRD BY 16-BIT) CACHED DRAM WITH 16K (1024-WQRD BY 16-BIT) SRAM P relim in ary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

324025GD

Abstract: HYM324025G hym324025
Contextual Info: SIEMENS 4M X 32 -Bit EDO-DRAM Module SMALL OUTLINE MEMORY MODULE HYM324025GD-50/-60 HYM324025GDL-50/-60 Preliminary Information • 72-Pin Small Outline Dual-in-Line Memory Module • 4 0194 034 words by 32-bit organization • Hyper Page Mode - EDO - performance

ot409

Abstract: AS3A 70P3S-M
Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 9 D T P /R T - 7 r 8 ,- 1 0 ,-1 5 16MCDRAM:16M 1 M-WORD BY 16-BIT CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec, and some of the contents are subject to change without notice.

Contextual Info: SIEMENS 3.3V 4M x 64-Bit 2 BANK SDRAM Module 3.3V 4M x 72-Bit 2 BANK SDRAM Module HYS64V4120GU-10 HYS72V4120GU-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-ln-Line SDRAM Module • 2 bank 4M x 64, 4M x 72 organisation

Contextual Info: SIEMENS 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 168 pin unbuffered DIMM Modules Advanced Information • 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-ln-Line SDRAM Modules

HYM64V4045GU50

Abstract: GU50
Contextual Info: SIEMENS 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module HYM64V4005GU-50/-60 HYM64V4045GU-50/-60 HYM72V4005GU-50/-60 HYM72V4045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module

Contextual Info: SIEMENS 8M x 72-Bit Dynamic RAM Module ECC - Module HYM 72V8040GS-50/-60 168 pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 2 bank 8 M x 72 organisation • Optimized for ECC applications

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-424000LAB72F 3.3 V OPERATION 4M -WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000LAB72F is a 4 194 304 words by 72 bits dynamic RAM module on which 18 pieces of 16M DRAM ( tiPD 4217400L) are assembled.

Contextual Info: SIEMENS 16M x 72-Bit Dynamic RAM EDO- Module ECC - Module HYM 72V1625GS-50/-60 HYM 72V1635GS-50/-60 168pin buffered DIMM Module Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16M x 72 organisation

Contextual Info: SIEMENS 8M x 72-Bit EDO-DRAM Module ECC - Module HYM 72V8045GS-50/-60 168 pin buffered DIMM Module Advanced Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 2 bank 8 M x 72 organisation • Optimized for ECC applications

Contextual Info: SIEMENS 4M x 16-Bit Dynamic RAM HY b 3164165BT L -40/-50/-60 (8k, 4k & 2k Refresh, EDO-version) HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 Preliminary Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature

M5M4V4169

Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 1.1 M5M4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM PIN CONFIGURATION (TOP VIEW) Preliminary This document is a preliminary Target Spec. and some of the contents are

m5m4v4169

Abstract: M5M4V4169CRT-10 256K-WORD M5M4V4169TP 70P3S-M 256-kword 1-OF-128 1kx16
Contextual Info: MITSUBISHI LSIs TARGET SPEC REV. 1.1 M5M4V4169CRT-10,-12,-15 4MCDRAM:4M(256K-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM PIN CONFIGURATION (TOP VIEW) Preliminary This document is a preliminary Target Spec. and some of the contents are

Contextual Info: GMM7738280CTG BMx72, 3.3 V, 4K Ref, EDO D escription The G M M 7738280CTG is an 8M x 72 bits Dynamic RAM MODULE which is assembled 9 pieces of 8M x 8bit DRAMs in 32 pin TSOP II package and two 16bit driver ICs in 48pin TSSOP package mounted on a 168 pin printed

mx168

Abstract: SO-DIMM 144-pin
Contextual Info: SIEMENS 3.3V SDRAM Modules HYS64Vx000GD-10 144 pin SO-DIMM SDRAM Modules 8MB , 16MB, 32MB & 64MB density Preliminary Information • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-Line Synchronous DRAM Modules • 1 bank 1M x 64, 2M x 64, 4M x 64 and 8M x 64 non-parity module organisation