TJ HANDBOOK Search Results

100FXFG13

Abstract: 100FXFH13
Contextual Info: TOSHIBA 10OFXFG 13,1 OOFXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 3300V Average Forward Current ÏF AV = 1(>0a Reverse Recovery Time (Tj = 25°C) tj»j»—3.1/¿s

200FXH13

Abstract: 200FXG13
Contextual Info: TOSHIBA 200FXG13#200FXH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 200FXG13, 200FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage VRRM = 3000V Average Forward Current ÏF A V V O C A Reverse Recovery Time (Tj = 25°C tj»j»—4.5 jus

A3P1000

Abstract: ProASIC3 Datasheet A3P125 ProASIC3 A3P250 A3P1000 application notes FG144 FG256 FG484 VQ100 A3P060
Contextual Info: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

flash "high temperature data retention" mechanism

Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
Contextual Info: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

Contextual Info: Automotive ProASIC 3 Datasheet P ro du c t Br ie f ® 1 – Automotive ProASIC®3 Flash Family FPGAs Features and Benefits Low Power High-Temperature AEC-Q100–Qualified Devices • • • Grade 2 105°C TA 115°C TJ Grade 1 125°C TA (135°C TJ) PPAP Documentation

A3P600

Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
Contextual Info: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

1100 847 e11

Abstract: c 1383
Contextual Info: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

Contextual Info: Automotive ProASIC 3 Datasheet P ro du c t Br ie f ® 1 – Automotive ProASIC®3 Flash Family FPGAs Features and Benefits Low Power High-Temperature AEC-Q100–Qualified Devices • • • Grade 2 105°C TA 115°C TJ Grade 1 125°C TA (135°C TJ) PPAP Documentation

A3P600

Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
Contextual Info: v1.1 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

A3P1000 application notes

Abstract: A3P060 ACTEL FBGA 144 A3P1000 ProASIC3 ProASIC3 Flash Family
Contextual Info: v1.1 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

ProASIC3

Abstract: A3P1000 application notes FIPS192 A3P060 A3P250 ACTEL Actel a3p125 FIPS-192 A3P1000 ProASIC3 Flash Family
Contextual Info: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)

S12 MARKING DIODE

Abstract: S12 MARKING CODE DIODE diode marking s12 s12 diode BBY39
Contextual Info: Short-form product specification Philips Semiconductors Double variable capacitance diode BBY39 QUICK REFERENCE DATA APPLICATIONS • Electronic tuners in satellite TV systems. SYMBOL DESCRIPTION Vr continuous reverse voltage Tj operating junction temperature

SP00070

Abstract: SMD 5 PIN PAL1 SJ00029
Contextual Info: INTEGRATED CIRCUITS im m A B T 2 2 V 1 O A /B BiCMOS versatile PAL device Product specification 1995 Feb 01 Military Data Handbook Philips Semiconductors PHILIPS V\ PHILIPS rtv / 7 1 1 0 fl2 tj ODflflELO bflT This Material Copyrighted By Its Respective Manufacturer

Contextual Info: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C Tstg

Contextual Info: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C

Contextual Info: DF3A3.6FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.6FV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg

diode zener 3FV

Contextual Info: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg

Contextual Info: TOSHIBA 2SC5439 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5439 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS INVERTER LIGHTING APPLICATIONS • • Excellent Switching Times : tj. = 0.2 /us Typ. ,

20M diode zener

Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Contextual Info: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200

Contextual Info: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg

Diagonal

Abstract: UDA1325 DA1325
Contextual Info: INTEGRATED CIRCUITS SHEET f.•-y^ZZZ K . & n tj UNIVERSAL SERIAL BUS m BUS UDA1325 Universal Serial Bus USB) CODEC 1999 May 10 Preliminary specification File under Integrated Circuits, IC01 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors

marking AU

Contextual Info: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C

Contextual Info: DF2S16CT TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16CT Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristic Symbol Rating Unit Power dissipation P* 150* mW Junction temperature Tj 150 °C Tstg

Contextual Info: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range