TIP 29 transistor
Abstract: TIP 34 pnp transistor tip 32C transistor TIP 32 texas instruments tip32 T1P32A Texas Instruments TIP32C 1N91 diode TIP 32c transistor TIP 32 transistor
Contextual Info: TYPES TIP32, TIP32A, TIP32B, TIP32C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMP.LIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS D ESIGN ED FO R CO M PLEM EN TARY USE WITH TIP31, TIP31A, TIP31B, TIP31C • 40 W at 25°C Case Temperature
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tip32t1p32atip32btip32c+14tip31tip31atip31btip31ctip32atip 29 transistortip 34 pnptransistor tip 32ctransistor tip 32texas instruments tip32texas instruments tip32c1n91 diodetip 32c transistortip 32 transistor
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texas instruments tip32
Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Contextual Info: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature
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tip31tip31atip31btip31c+8tip32tip32atip32btip32ctexas instruments tip32tip 31ctil 31atexas instruments tip31
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tip320
Abstract: texas instruments tip32 c2688 Texas Instruments TIP32C TIP32B texas 2N4301 TRANSISTOR 36774 TIP32 equivalent TIP32 TIP32A
Contextual Info: "Tl x a s INSTR -COPTO} t2 DE | Ö T b l 7 5 h Ö 9 6 1 7 2 6 TEXAS INSTR O P T Ò T 6 2C 0D3L7tifl Ö 36768 TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F P-N-P SILICON POWER TRANSISTORS JU LY 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With TIP31 Series
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tip32tip32atip32btip32c+13tip32dtip32etip32ftip31o-220abtip320texas instruments tip32c2688texas instruments tip32ctip32b texas2n4301transistor 36774tip32 equivalent
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DA 2688
Abstract: transistor DA 2688 transistors TIP32 TIP32 PNP Transistor TIP32B texas
Contextual Info: "TEXAS INSTR i O P T O F 8961726 t.5 T EX A S IN S T R D E T J M b lT S h O PTO 0D 3L7tifl Ö 62C 3 6 7 6 8 TIP32, TIP32A, TIP32B, TIP32C, TIP32D, TIP32E, TIP32F P-N-P SILICON POWER TRANSISTORS J U L Y 1968 - R EV ISED OCTOBER 1984 • Designed for Complementary Use With TIP31 Series
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tip32tip32atip32btip32c+11tip32dtip32etip32ftip31o-220ab0thl72bda 2688transistor da 2688transistors tip32tip32 pnp transistortip32b texas
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cd 75232
Abstract: TIP32C S334
Contextual Info: T Y P E S T IP 3 2 , T IP 3 2 A , TIP32B . TIP32C P -N -P S IN G LE -D IF F U S E D M E S A S IL IC O N PO W ER TR A N S IS T O R S X D H mC FOR POWER-AMRLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP31, TIP31A, TIP31B, TIP31C
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tip32btip32ctip31tip31a+5tip31btip31cs-334cd 75232s334
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MJ3001 equivalent
Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
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mj29552n3055mj2955a2n3055a+15mj2500mj2501mj3000mj3001tip73btip74mj3001 equivalentmj3000 equivalent2sc1096 equivalentbu108mj3000 circuitmj2955 2n3055 200 watts amplifierbdx54mj2955 replacement2n3055 replacement
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motorola MJ15001
Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —
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mj15001mj15002tip73btip74+13tip74atip74btip75tip75amotorola mj15001bu108equivalent to tip162bdx54d45h11 equivalent replacement2sd217bu326bu100replacement bd139
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TIP142 TRANSISTOR REPLACEMENT
Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
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tip140tip145tip141tip146+16tip142tip147tip73btip74tip74atip74btip142 transistor replacementreplacement for tip147high end amplifier schematics 2n3055pin configuration npn transistor tip41cbdw51c schematicstip142 tip147bd262 darlington2n6022bu108transistor tip142
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2SC105
Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp
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2n49182n49192n49202n4921+162n4923tip73btip74tip74atip74btip752sc1052sd718 amplifier2n4923 motorolabd139 equivalent transistor2sa10462sc1629 equivalentbd139 complementst bdw83c2sc108bu326a equivalent
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All similar transistor 2sa715
Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc
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bd243bbd244bbd243cbd244c+10tip73btip74all similar transistor 2sa7152n3055bu108transistor bc 1532sa1046bu326bu100transistor cross reference
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BU108
Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:
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bux41tip73btip74tip74a+11tip74btip75tip75atip75btip75c2n6488bu1082sc1629 equivalentbdx54bu326bu100
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2SA1046
Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.
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bux85tip73btip74tip74a+11tip74btip75tip75atip75btip75c2sa1046380 darlington to3 ibmreplacement bd139bu326bu108bu100
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mje15033 replacement
Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.
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mje341mje344tip73btip74+13tip74atip74btip75tip75atip75bmje15033 replacementbu108tip41bmje2482x 0602 ma2sc1419bu326bu100
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BU108
Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —
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mje2361tmje2360ttip73btip74+10tip74atip74btip75tip75atip75bbu108tip105 darlington transistorbdx54bu326bu100
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mje15033 replacement
Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver
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2n30552n65762n65772n6578+15tip73btip74tip74atip74btip75mje15033 replacementbd262 darlington2sb554 replacement2sc1079 replacement2sd3232n6254 replacementbd262a darlingtonmj2955 replacement2sc1013 replacement2n3055 replacement
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Circuit details of BD237 equivalent
Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd237tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488circuit details of bd237 equivalentbd237-10bd237 similarbu108bd237 equivalent2sc7bd237 pin assignment2sd4242sc495bux98a
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bd135 TRANSISTOR REPLACEMENT GUIDE
Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc
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bd135bd137bd139tip73b+16tip74tip74atip74btip75tip75atip75bbd135 transistor replacement guidetransistor bd 458transistor bc 562n5981 pnp transistorbd135-bd137-bd139bd139 pin databu108transistor bd 325bd139-25mje13005 complementary
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2SA1046
Abstract: BU108 BU326 BU100 BD262 2sb688 y 2n5632 bd876
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6497 2N6498* High Voltage NPN Silicon Power Transistors *Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, switching regulators and line–operated
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2n64972n6498tip73btip74+10tip74atip74b2sa1046bu108bu326bu100bd2622sb688 y2n5632bd876
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MJE3055 to247
Abstract: Motorola transistors MJE3055 TO 127 MJE3055 equivalent ST T4 3580 Motorola transistors MJE2955 BU108 transistor MJE3055 motorola MJE3055 TO 126 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD2955 PNP MJD3055 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • • • • • Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
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mjd2955mjd3055mje2955mje3055+16tip73btip74tip74atip74btip75tip75amje3055 to247motorola transistors mje3055 to 127mje3055 equivalentst t4 3580motorola transistors mje2955bu108transistor mje3055 motorolamje3055 to 126bu326bu100
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IC 3526
Abstract: transistor MJ15024 tip3055 equivalent RCA1C13 BU108 2N6277 applications MJ3247 BDX54 motorola MJ3000 2N3791 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD802 Plastic High Power Silicon PNP Transistor 8 AMPERE POWER TRANSISTORS PNP SILICON 100 VOLTS 65 WATTS . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 1.0 Adc
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bd802tip73btip74tip74a+15tip74btip75tip75atip75btip75cic 3526transistor mj15024tip3055 equivalentrca1c13bu1082n6277 applicationsmj3247bdx54motorola mj30002n3791 equivalent
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BU108
Abstract: MJ15024 MOTOROLA transistor 2N3055 transistor MJ15022 BDX54 MJ15024 MJ15025 BUV11 equivalent application notes MJ15024 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —
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mj15022mj15024tip73btip74+13tip74atip74btip75tip75abu108mj15024 motorola transistor2n3055 transistor mj15022bdx54mj15024 mj15025buv11 equivalentapplication notes mj15024bu326bu100
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2N4922
Abstract: BU108 2SB655 BD390 MJ11021 2sb557 BDX54 2n6107 MOTOROLA 2SC1943 MJE2482
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV23 SWITCHMODE Series NPN Silicon Power Transistor 30 AMPERES NPN SILICON POWER METAL TRANSISTOR 325 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 15 at IC = 8 A
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buv23tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n64882n4922bu1082sb655bd390mj110212sb557bdx542n6107 motorola2sc1943mje2482
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2SB631
Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc
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2n64872n64902n64882n6491+11220abtip73b2sb631equivalent 2n6488bu1082sa10462sc22332n6488 motorolamotorola 3-351bu326bu100
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transistor mj11032 equivalent
Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
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tip73btip74tip74atip74b+16tip75tip75atip75btip75c2n64882n6490transistor mj11032 equivalenttransistor mj11028 equivalentmj11032 equivalentmj11028-29 transistor3296 variable resistor 1k ohm2sc493amplifier 2sd718 2sb688 schematic2sd717mj11030 equivalentbu326
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