TIP105 DARLINGTON TRANSISTOR Search Results

TIP105

Abstract: TIP107 A 107 transistor TIP106 transistor TIP105 transistor 107 A
Contextual Info: TIP105/106/107 TIP105/106/107 ◎ SEMIHOW REV.A0,Oct 2007 TIP105/106/107 TIP105/106/107 Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min.

TIP107

Abstract: IP105 tip106
Contextual Info: TIP105 TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP105, TIP106 and TIP107 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in TO-220 plastic package intented for use in power linear

TIP105 Darlington transistor

Abstract: TIP105 TIP106 TIP107 TIP107 central
Contextual Info: Darlington Power Transistors PNP TIP105/106/107 Darlington Power Transistors (PNP) Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant TO-220 Mechanical Data Case: TO-220, Plastic Package Terminals:

TIP107

Abstract: transistor tip105 TIP102 TIP105 TIP102 Darlington transistor
Contextual Info: TIP102 TIP105 TIP107  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL

tip107

Abstract: TIP102 morocco TIP102 PNP POWER TRANSISTOR TIP102 tip105 tip105 st TIP102 Darlington transistor st. tip105
Contextual Info: TIP102 TIP105 TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT

TIP102

Abstract: TIP100 TIP101 DARLINGTON 3A 50V npn DARLINGTON 3A 100V npn
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors TIP100/101/102 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP105/106/107 APPLICATIONS

TIP105

Abstract: TIP100 TIP102 TIP-106 IP106 TIP106 TIP107 IP107
Contextual Info: TIP100/TIP102 TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

TIP105

Abstract: TIP106 TIP107
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors TIP105/106/107 DESCRIPTION •With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP100/101/102 APPLICATIONS

Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

TIP102

Abstract: TIP105
Contextual Info: TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE hFE CLASSIFICATION APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ AUDIO POWER AMPLIFIER ■ GENERAL POWER SWITCHING

Contextual Info: tSsml-donctuctoi {Pioduati., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP105 PNP SILICON POWER DARLINGTON TRANSISTOR APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT . AUDIO POWER AMPLIFIER

Contextual Info: SGS-THOMSON TIP 100/TIP 102 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

TLP100

Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP105/106/107

Contextual Info: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors

tip107

Abstract: TIP105
Contextual Info: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

TIP107

Abstract: TIP106 TIP105 TIP-106
Contextual Info: TIP105/TIP106/TIP107 PNP Epitaxial Silicon Darlington Transistor • • • • • • Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A Min. Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000@ V c e = -4V, |c= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP100/101/102

NPN Transistor 8A

Abstract: TIP102 Darlington transistor
Contextual Info: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 • Complementary to TIP105/106/107

Contextual Info: TIP100/101/102 TIP105/106/107 SGS-THOMSON POWER DARLINGTONS DESCRIPTIO N The TIP100, TIP101 and TIP102 are silicon epi­ taxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package, intended for use in power linear and swit­

TIP105

Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102

Contextual Info: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102

p107 to-220

Abstract: P102 P105 P107 TIP100 TIP101 TIP102 TIP105 TIP106 TIP107
Contextual Info: @ S A N Y O SEMICONDUCTOR NPN TIP100 TIP101 TIP102 PNP TIP105 TIP106 TIP107 60-80-100 VOLTS, 8 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS HIGH CURRENT GAIN hFE = 4000 typ. @3V, 4A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @4A MONOLITHIC CONSTRUCTION WITH BUILT-IN

Contextual Info: TIP105 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k