TIP 133 TRANSISTOR Search Results

Contextual Info: PLASTIC SIDELOOKER PAIR yPTOELECI QPE1113 W IO W » • : 08 DIA. .08 DIA. .050 1.27 .050 (1.27) .062 DIA. .062 DIA. T .200 (5.08) EM ITTER C O LLE CTO R h .020 (0.51) SQ NOM 100^(2.54) .020 (0.51) .020 (0.51) - . 1 7 5 (4 .44) - —.175 (4.44)— PH O TO TRANSISTOR

npn, transistor, sc 107 b

Abstract: transistor TIP 31A TIP 31a Transistor tip31a TIP32 NPN Transistor tip 31A 31076 TIP 133 transistor
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?ES4 aOflSSlô =1 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP31 TIP31A T1P31B TIP31C TIP32 TIP32A TIP32B TIP32C POWER TRANSISTORS COMPLEMENTARY SILICON . . . designed for use in general purpose amplifier and switching applications.

2SA1563

Contextual Info: Ordering number : EN3287 FC 133 No.3287 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features • On-chip bias resistances (Rl = 10k£2, R2 = 47kft) • Composite type with 2 transistors contained in the CP package currently in use, improving the

transistor d155

Abstract: ST2171 QPE1113 TIP 133 transistor TIP 40c transistor TRANSISTOR tip 127
Contextual Info: [*o PLASTIC SIDELOOKER PAIR OPTOELECTRONICS QPE1113 PACKAGE DIMENSIONS .087 2.22 —| .08 DIA. .08 DIA. .050(1.27) .062 DIA. .500 (12.7) MIN _ .0 2 0 (0.51) SQ NOM .1 0 0 (2 .5 4 )-! .100 (2 .5 4 )- f- .100(2.54) .020 (0.51) .020 (0.51 )J - . 1 7 5 (4 .4 4 ) -

PHOTO TRANSISTOR 940nm

Abstract: sidelooker DIODE bvoe
Contextual Info: FQ PLASTIC SIDELOOKER PAIR OPTOELECTHOIIICS QPE1113 PACKAGE DIMENSIONS .08 DIA. 08 DIA. .050 1.27 J .050 (1 .2 7 )1 .062 DIA. .062 DIA .020 (0.51) SQ NOM .100 ( 2 .5 4 )- "ÏÔo"(2.54) .020 (0.51) .020 (0.51 )J —.175 ( 4 .4 4 ) — .175 ( 4 .4 4 )— -

TIP 133 transistor

Contextual Info: EO PLASTIC T-1 PAIR OPTOELECTRONICS QPC1213 PACKAGE DIMENSIONS REFERENCE SURFACE . 126 3.20 .106(2.69) REFERENCE SURFACE — r ,030(0.76)> NOM T — .203(5.16) .133(4.65) J_ .030(0.76)' NOM L .800 (20.3) MIN T 1-.800(20.3) MIN j_ i : i— .050(1.27)

nec 151

Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.

THERMISTORS SCK 055

Abstract: 103JM1A h3475 KC222 105rg1k ST2R503B THERMISTORS SCK 016 102FH1K Pt 3750 rtd PR103J2
Contextual Info: Table of Contents Page Mission Company Overview .3 General Information .4-5

Contextual Info: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,

Contextual Info: m MH88612 M ITEL Subscriber Line Interface Circuit SLIC Preliminary Information 2 • Transformerless 2-wire to 4-wire conversion • Battery and ringing feed to line • Off-hook and dial pulse detection • Ring ground over-current protection • Adjustable constant current feed

FET transistors with s-parameters

Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
Contextual Info: M/A-COM SEMICONDUCTOR “TÍ »T|st,M2al4 000Db25 t. J~. ¿S' AߣR MA4F004 Series Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X

MA4F004

Contextual Info: Vv M/A-COM ADVANCED DE |st,4aifl3 ODDDDCH □ | ' 7 ' 3 / ' ^ 5 A ßm MA4F004 Series Gallium Arsenide Field Effect Transistor Description Features The MA4F004 series of gallium arsenide fieldeffect transistors GaAs FETs is a series of Schottky barrier devices with a 1 micron length X

Contextual Info: MH88612K Subscriber Line Interface Circuit Preliminary Information O rdering Inform ation • Input im pedance 600 £2 • Transform erless 2-w ire to 4-w ire conversion • Battery and ringing feed to line • O ff-hook and dial pulse detection Ring ground over-current protection

2222A

Contextual Info: Who1 PHAECWKLAERTDT mLKM 4.8 VNPN Common Emitter Medium Power Output Transistor Ifechnical Data AT-31625 Features • 4.8 V olt O peration • +28.0 dBm P, U @ 900 MHz, Typ* MSOP-3 Surface Mount Plastic Package O utline 25 • 70% C ollector E fficiency @ 900 MHz, Typ.

IRG4PH40KD

Abstract: IRGPH40KD2 IRGPH40MD2
Contextual Info: PD- 9.1577A IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • High short circuit rating optimized for motor control, tsc =10µs, V CC = 720V , TJ = 125°C, VGE = 15V

CBC 184 transistor

Abstract: TRANSISTOR cBC 449 t1c8 BF 145 transistor 448 2222A CBC 184 c transistor AT-31625 AT-31625-TR1 transistor 2222a 96t1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @␣ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

CBC 184 transistor

Abstract: CBC 184 c transistor transistor 2222a data sheet AT-31625 AT-31625-BLK AT-31625-TR1
Contextual Info: 4.8 V NPN Common Emitter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,

low noise, hetero junction fet

Abstract: high frequency transistor ga as fet NE27200 s11 diode shottky NE32500 nec, hetero junction transistor GA 88 KA 88
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

NEC D74

Abstract: transistor D113 NEC D76 NE32900 nec, hetero junction transistor 4560d GHz Power FET low noise, hetero junction fet NEC D70
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped

4066 spice model

Abstract: marking r4 SOT343 RF LNA" 1 to 2 GHz" spice
Contextual Info: Freescale Semiconductor Technical Data MBC13900/D Rev. 0, 6/2002 MBC13900 Scale 2:1 MBC13900 Package Information Plastic Package Case 318M (SOT-343) NPN Silicon Low Noise Transistor Ordering Information 1 Introduction The MBC13900 is a high performance transistor

NEC 82 A 0839

Abstract: NE27200 NE32500
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable

cmos databook

Abstract: BUZ 215 diagram F90H lcd circuit diagram for samsung BASIC COMPARATOR CIRCUITS digital watch lcd circuit DATABOOK
Contextual Info: DATABOOK ERRATA This document contains the corrections of errors, typos and omissions in the following document. Samsung 4-bit CMOS KS57C2504 Microcontroller Databook Document Number: 20-57-2504 Publication: April 1995 KS57C2504 DATABOOK ERRATA ERRATA Samsung 4-bit CMOS KS57C2504 Microcontroller Data Book

FZH 161

Abstract: FZH 111 FZH 181 transistor I 17-13 0773 CBC 184 transistor FZH 175 S3230 FZH 165 FZH 165 b fzh 171
Contextual Info: What HEWLETT wHHM P A C K A R D 4.8 V NPN Common Em itter Medium Power Output Transistor Technical Data AT-31625 Features • 4.8 Volt Operation • +28.0 dBm Pout @ 900 MHz, Typ. MSOP-3 Surface Mount Plastic Package Outline 25 • 70% C ollector Efficiency

Contextual Info: SLOTTED OPTICAL SWITCH OPTOELECTRQKICS CNY28 M H iM B SYMBOL MILLIMETERS MIN. -0P r - i b ,t @ *»i MAX. .433 10.7 11.0 .422 A, 3.0 3.2 .119 .125 A, 3.0 3.2 .119 .125 b, D D, d2 e2 E L Q .750 .50 NOM. .024 t . 0 3 0 2 .020 NOM. 2 24.3 24.7 .957 .972 11.0