TIP 1050 DATASHEET Search Results

LT3503

Contextual Info: DEMO CIRCUIT 1050 LT3503 QUICK START GUIDE LT3503 1.2A, 2.2MHz Step-Down Switching Regulator in 2mmx3mm DFN DESCRIPTION Demonstration circuit 1050 is a monolithic step-dow n DC/DC sw itching regulator featuring LT3503. The demo board is designed for 3.3V output from a 4.5V to 20V

Contextual Info: 400mW /1060nm Single Mode Pump Laser Features • • • • 400mW Kink Free 1060 wavelength Internal cooler and thermistor PM Fiber Applications • Ordering Information Fiber Lasers Part number Description EM250 1060nm SM Pump General Description The EM250 single mode, cooled 1060 nm pump laser delivers up to 400mW of fiber-coupled power. The module is packaged

RJ11 splitter

Abstract: RJ61 splitter CT812 RJ-61 RJ11 JACK MODULE 4 PIN DI0408LSAR2 E96804 ICES-003 Intel Dialogic PLAY STATION 3 POWER SUPPLY
Contextual Info: Datasheet Telecom and Compute Products Intel Dialogic® DI0408LSAR2 Switching Board The Intel® Dialogic® DI0408LSAR2 switching board is a next-generation building block for converged communications systems. The DI0408LSAR2 is a single-slot, richly configured

68pin SCSI connector

Abstract: RJ11 patch panel CBLTAC0X32 RJ21X EBZUSA-43111-CE-T fsk arm dtmf CT812 DISI32R2 Intel Dialogic 8 pin mini-din audio diagram
Contextual Info: Datasheet Telecom and Compute Products Intel Dialogic® DISI16R2, DISI24R2, and DISI32R2 Switching Boards Intel® Dialogic® DISI16R2, DISI24R2, and DISI32R2 switching boards are next-generation building blocks for converged communications systems. These boards are single-slot PCI solutions that

Contextual Info: VS-10TQ035SPbF, VS-10TQ045SPbF Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

136 8PIN

Abstract: AS1720 Bc161 marking LM741 electro mechanical solenoid valve AS1720B-ATDT BC161 MLPD 12V RELAYS MLPD 6 PIN PACKAGE
Contextual Info: Datasheet AS1720 S o l e n o i d / Va l v e D r i v e r w i t h C u r r e n t L i m i ta t i o n 1 General Description 2 Key Features The AS1720A is a low side current source providing an optimized DC Operation for power saving and ultra low electro magnetic radiation.

Contextual Info: iC-OG preliminary 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER Rev D1, Page 1/10 FEATURES APPLICATIONS ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability ♦ Short track spacing of 600 µm ♦ Elimination of dark currents through differential scanning

Contextual Info: VS-10TQ035SPbF, VS-10TQ045SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base cathode 2 • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

tip 1050

Abstract: transistor tip 1050 DA79 LT 735
Contextual Info: Am7944 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS






Programmable constant-current feed Current gain = 200 Programmable loop-detect threshold Low standby power Ground-key detector Tip Open state for ground-start lines –19 V to –56.5 V battery operation

Contextual Info: Le7944 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant-current feed ■ On-chip Thermal Management TMG feature ■ Current gain = 200 ■ Two-wire impedance set by single external impedance ■ Programmable loop-detect threshold

BR262ADEVK

Contextual Info: BR262ADEVK BELASIGNA R262 Analog Demonstrator Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL The BelaSigna R262 Analog Demonstrator The BelaSigna R262 Analog Demonstrator is a self-contained, battery-powered unit that can be used to

vishay T1113P

Contextual Info: T1113P www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 2.97 x 2.97 x 0.28 • Radiant sensitive area (in mm2): 7.5 • Peak sensitivity wavelength: 960 nm

Contextual Info: Le7944 Subscriber Line Interface Circuit • Programmable constant-current feed ■ On-chip Thermal Management TMG feature ■ Current gain = 200 ■ Two-wire impedance set by single external impedance ■ Low standby power ■ Ground-key detector ■ –19 V to –56.5 V battery operation

Contextual Info: 10TQ.PbF Series Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Base cathode 2 TO-220AC RoHS* • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: VS-10TQ035S-M3, VS-10TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-10TQ035S-M3, VS-10TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-10TQ035SHM3, VS-10TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

10TQ040PBF

Abstract: VS-10TQ045-N3 10TQ035
Contextual Info: VS-10TQ.PbF Series, VS-10TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

Contextual Info: VS-10TQ035SHM3, VS-10TQ045SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-10TQ.PbF Series, VS-10TQ.-N3 Series www.vishay.com Vishay Semiconductors Schottky Rectifier, 10 A FEATURES Base cathode 2 • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical

T8514VB

Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm

FVOV6870

Abstract: MIL-HDBK-263 VISHAY Optoelectronics
Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

VISHAY Optoelectronics

Abstract: FVOV6870 MIL-HDBK-263
Contextual Info: TB9414VA Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.19 • Peak wavelength: λ = 940 nm

T8514

Abstract: T8514VB transistor tip 1050 FVOV6870 MIL-HDBK-263 81129
Contextual Info: T8514VB Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm