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Contextual Info: STP60S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)4.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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STP60S Freq20M time250m |