TIME200P Search Results

Contextual Info: PR0109 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev.Rec. Time200p @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: PR0103 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage15 t(rr) Max.(s) Rev.Rec. Time200p @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: PR0108 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage30 t(rr) Max.(s) Rev.Rec. Time200p @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: PR0106 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage24 t(rr) Max.(s) Rev.Rec. Time200p @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: HT3-050B Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current20m V(RRM)(V) Rep.Pk.Rev. Voltage4.0 t(rr) Max.(s) Rev.Rec. Time200p @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage.40 @I(FM) (A) (Test Condition)20m

Contextual Info: TRSP2754S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)275 V(BR)CBO (V)300 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRSP2254 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)225ã V(BR)CBO (V)225 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRSP2754 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)275ã V(BR)CBO (V)275 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRSP2254S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)225 V(BR)CBO (V)250 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRSP3504 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)350ã V(BR)CBO (V)350 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRSP2504S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)275 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRSP2504 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250ã V(BR)CBO (V)250 I(C) Max. (A)400m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)