TIM85 Search Results

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

TIM8596-4

Contextual Info: TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

TIM8596-4

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 8.5GHz to 9.6GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS

TIM8596-8

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-8 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=39.5dBm at 8.5GHz to 9.6GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS

C01117

Abstract: TIM8596-8
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM8596-8 TECHNICAL DATA • B H H B B n H B D B B H B B H FEATURES: ■ HIGH POWER PldB = 39-5 dBm at 8,5 GHz to 9.6 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 6.0 dB at 8.5 GHz to 9.6 GHz

TIM8596-15

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-15 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=42.0dBm at 8.5GHz to 9.6GHz n HIGH GAIN G1dB=7.0dB at 8.5GHz to 9.6GHz n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25° C

Contextual Info: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

TIM8596-2

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM8596-2 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz ■ BROAD BAND IN T E R N A LLY MATCHED ■ HIGH GAIN G idB = 7.5 dB at 8.5 GHz to 9.6 GHz ■ H ERM ETICALLY SE A LED PACKAGE

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-4 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED FET P1dB=36.5dBm at 8.5GHz to 9.6GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C

TIM8596-2

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=33.5dBm at 8.5GHz to 9.6GHz „ HIGH GAIN „ HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

TIM8596-8

Contextual Info: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

TIM8596-15

Contextual Info: MICROWAVE POWER GaAs FET TIM8596-15 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED FET P1dB=42.0dBm at 8.5GHz to 9.6GHz „ HERMETICALLY SEALED PACKAGE „ HIGH GAIN G1dB=7.0dB at 8.5GHz to 9.6GHz RF PERFORMANCE SPECIFICATIONS

TIM8596-4

Abstract: A2325
Contextual Info: TOSHIBA MICROWAVE POWER GaAs F ET MICROWAVE SEMICONDUCTOR TIM8596-4 TECHNICAL DATA FEATURES: • HIGH POWER PldB = 36.5 dBm at 8.5 GHz to 9.6 GHz ■ HIGH GAIN GldB = 7.5 dB at 8.5 GHz to 9.6 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs