| TIM5359-8 |
|
Toshiba
|
TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11D1B, 3 PIN, FET RF Power |
Original |
PDF
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156.28KB |
8 |
| TIM5359-8 |
|
Toshiba
|
Internally Matched Power GaAs FET (C-Band) |
Original |
PDF
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122.97KB |
5 |
| TIM5359-80SL |
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Toshiba
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C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 49; G1dB (dB): 7.5; Ids (A) Typ.: 18; IM3 (dBc) Typ.: -30; Rth (°C/W) Typ.: 0.5; Package Type: 7-AA02C |
Original |
PDF
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40.48KB |
2 |
| TIM5359-8SL |
|
Toshiba
|
TIM5359 - TRANSISTOR C BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11D1B, 2 PIN, FET RF Power |
Original |
PDF
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156.28KB |
8 |
| TIM5359-8SL |
|
Toshiba
|
MICROWAVE POWER GaAs FET |
Original |
PDF
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86.12KB |
2 |
| TIM5359-8UL |
|
Toshiba
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C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 39.5; G1dB (dB): 10; Ids (A) Typ.: 2.2; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 2.5; Package Type: 2-11D1B |
Original |
PDF
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97.28KB |
4 |
