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TIM1213 Datasheets (25)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| TIM1213-10 |
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Internally Matched Power GaAs FET (X, Ku-Band) | Original | 243.77KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-10 |
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IC FET MISC 3(2-11C1B) | Scan | 114.29KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-10L |
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FET, Microwave Power GaAs FET Transistor, ID 11.5 A | Scan | 247.07KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-10L |
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MICROWAVE POWER GaAs FET | Scan | 247.07KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-15 |
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MICROWAVE POWER GaAs FET | Scan | 215.07KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-15 |
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IC FET MISC 3(2-11C1B) | Scan | 123.13KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-15L |
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TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, JFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power | Original | 135.26KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-15L |
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FET, Microwave FET Transistor, ID 11.5 A | Scan | 443.94KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-15L |
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MICROWAVE POWER GaAs FET | Scan | 443.95KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-18L |
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TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power | Original | 152.37KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-2 |
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FET, Microwave Power GaAs FET Transistor, ID 2.6 A | Original | 322.4KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-2 |
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TIM1213 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | Original | 126.98KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-2L |
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MICROWAVE POWER GaAs FET | Original | 86.55KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-2L |
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TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power | Original | 126.98KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-30L |
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TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA03A, 2 PIN, FET RF Power | Original | 153.04KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-4 |
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Internally Matched Power GaAs FET (X,Ku-Band) | Original | 319.96KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-4 |
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TIM1213 - TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | Original | 110.01KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-4L |
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FET, Microwave Power GaAs FET Transistor, ID 5.2 A | Original | 133.38KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-4UL |
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TIM1213 - TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET RF Power | Original | 110.01KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TIM1213-5 |
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MICROWAVE POWER GaAs FET | Original | 85.89KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TIM1213 Price and Stock
Toshiba America Electronic Components TIM1213-8LKU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TIM1213-8L | 5 |
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Buy Now | |||||||
TIM1213 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TIM1213Contextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm n HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET |
Original |
TIM1213-10L TIM1213 | |
TIM1213-4Contextual Info: TOSHIBA TIM1213-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
Original |
TIM1213-4 MW50220196 TIM1213-4 | |
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Contextual Info: TIM1213-15L FEATURES : • LOW IN TER M O D U LA TIO N D IS TO R TIO N ■ HIGH GAIN IM 3 = - 4 5 dBc at Po = 30.0 dBm, GidB = 6.0 dB at 12. 7 GHz to 13. 2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY M ATCHED HIG H POWER ■ HERMETICALLY SEALED PACKAGE |
OCR Scan |
TIM1213-15L 2-11C1B) 213-15L | |
TIM1213-10Contextual Info: TOSHIBA TIM1213-10 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
Original |
TIM1213-10 M1213-10 2-11C1B) MW50260196 TIM1213-10 | |
TIM1213-8Contextual Info: TOSHIBA TIM1213-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
Original |
TIM1213-8 2-11C1B) MW50240196 TIM1213-8 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-4L TECHNICAL DATA FEATURES : • ■ HIGH GAIN LOW INTER M O D U LA TIO N DISTO R TIO N IM 3 = - 4 5 dBc at Po = 25 dBm, G idB = 7.5 dB at 12.7 GHz to 13.2 GHz Single Carrier Level BROAD BAND INTERNALLY MATCHED |
OCR Scan |
TIM1213-4L TIM1213-4L | |
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Contextual Info: TOSHIBA MICROW AVE PO W ER GaAs FET MICROWAVE SEM IC O N D U C TO R TIM1213-15L TECHNICAL DATA FEATURES • ■ LOW IN T E R M O D U LA T IO N D IS TO R TIO N HIGH GAIN IM 3 = - 45 d B c a t Po = 30.0 dB m , G-idB = 6.0 dB at 12.7 GHz to 13.2 GHz S in g le C arrier Level |
OCR Scan |
TIM1213-15L TIM1213-15L--------------POWER | |
TIM1213-10LContextual Info: MICROWAVE POWER GaAs FET TIM1213-10L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm HIGH POWER P1dB=40.5dBm at 12.7GHz to 13.2GHz HIGH GAIN G1dB=6.0 dB at 12.7 GHz to 13.2GHz BROAD BAND INTERNALLY MATCHED FET |
Original |
TIM1213-10L TIM1213-10L | |
TIM1213-15Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET MICROW AVE SEM ICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER 9 BROAD BAND INTERNALLY MATCHED PidB = 42. OdBm a t 12.7 to 13. 2GHz Q HIGH GAIN HERMETICALLY SEALED PACKAGE G idB = 6. OdB a t 12.7 to 13. 2GHz |
OCR Scan |
-TIM1213-15- --TIM1213-15- TIM1213-15 | |
TIM1213-5Contextual Info: MICROWAVE POWER GaAs FET TIM1213-5 PRELIMINARY MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWERT n BROAD BAND INTERNALLY MATCHED P1dB=37.0dBm at 12.7GHz to 13.2GHz n HERMETICALLY SEALED PACKAGE n HIGH GAIN G1dB=7.0dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25° C |
Original |
TIM1213-5 TIM1213-5 | |
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Contextual Info: T O S H IB A MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-15 TECHNICAL DATA FEATURES: • HIGH POWER P ,c ib ■ = 4 2 . O dBm a t HIGH GAIN G ida » 6. QdB a t 12.7 \ to « BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE 1 3 . 2 GHz |
OCR Scan |
TIM1213-15 | |
TIM1213-8LContextual Info: TOSHIBA TIM1213-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz |
Original |
TIM1213-8L 2-11C1A) MW50250196 TIM1213-8L | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1213-2 TECHNICAL DATA FEATURES: • HIGH POWER PidB = 33-5 dBm at 12.7 GHz to 13.2 GHz ■ HIGH GAIN GidB = 7.5 dB at 12.7 GHz to 13.2 GHz ■ BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE |
OCR Scan |
TIM1213-2 I213-2 | |
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Contextual Info: - TIM1213-15L FEA TU R ES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N ■ IM 3 = - 4 5 d B c at Po = 30.0 dBm , G-idB = 6.0 dB at 12.7 GHz to 13.2 GHz Single C arrier Level ■ H IG H GAIN H IG H PO W ER ■ B R O A D B A ND IN T E R N A L L Y M A T C H E D |
OCR Scan |
TIM1213-15L | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10L Features • H igh po w e r - IM 3 = -45 d B c a t Po = 29 dB m , - S in g le c a rrie r level • H igh po w e r - P 1dB = 4 0 .5 d B m at 12.7 G H z to 13.2 G H z • H igh gain - G 1 b = 6 .0 dB at 12.7 G H z to 13.2 G H z |
OCR Scan |
TIM1213-10L 2-11C1B) | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1213-4 MW50220196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET M ICROW AVE SEM ICO NDU CTO R TIM1213-10L TECHNICAL DATA FEATURES : • HIG H POWER ■ HIGH GAIN IM 3 = - 45 dBc at Po = 29 dBm, G 1dB = 6.0 dB at 12.7 GHz to 13.2 GHz Single Carrier Level ■ ■ BROAD BAND INTERNALLY MATCHED |
OCR Scan |
TIM1213-10L 2-11C1B) ------------TIM1213-10L-------------POWER | |
MW5024Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1213-8 MW50240196 MW5024 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
OCR Scan |
TIM1213-4 MW50220196 | |
TIM1213-30LContextual Info: MICROWAVE POWER GaAs FET TIM1213-30L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=45.0dBm at 12.7GHz to 13.2GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=5.5dB at 12.7GHz to 13.2GHz LOW INTERMODULATION DISTORTION |
Original |
TIM1213-30L -28dBc 7-AA03A) TIM1213-30L | |
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Contextual Info: MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°C |
Original |
TIM1213-4L | |
TIM1213-2Contextual Info: TOSHIBA TIM1213-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 7.5 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package |
Original |
TIM1213-2 MW50210196 TIM1213-2 | |
TIM1213-4LContextual Info: MICROWAVE POWER GaAs FET TIM1213-4L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 12.7GHz to 13.2GHz HIGH GAIN G1dB=7.5dB at 12.7GHz to 13.2GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS |
Original |
TIM1213-4L TIM1213-4L | |
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Contextual Info: MICROWAVE POWER GaAs FET TIM1213-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS Ta= 25°C |
Original |
TIM1213-2L | |