TIL 4N 25 Search Results

SO50

Contextual Info: - 157 — • C om linear * ft *e ft l£ C LC Ta =25°C # i£ iC ± 20 V M -*7 5 6 I AM , Al ( J a ^ Í5 , f iM , V cc ft € K 7E ^ li Í+ Vcc(V) I : Tc =25°C) ft | ft 'Æ * fi­ ] ÎS U K # i£ iE M tt- 7 aE $ ft h ft JE & til ft $ |f t >; ffi fô ^ 5 -í A • 7 > 7 ‘i

JE 33

Contextual Info: — 70 — H A f 3 r*, B 1 3 8 4 T L (2 0W, B T L mmmwi. • 1 3.2 v « ¥ « 1* 5 SB :4n ■ * fc * S ?S CT a — 2 5 °C) w m • o cL - e ffifflsM ■\ m m : 0 .0 5 % typ ( f = 1 k Hz, IB ^ V CCSU VcCHS V CCOP tijtl 3W ) •Pull-back S A S O e S B i

FL 817C

Abstract: K3022P equivalent nec 2561 equivalent 817c moc 3021 and 4n33 TLP 2561 CNY63 TLP 817 PS2001 C817B
Contextual Info: Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Code Definitions A Vishay Telefunken’s device is electrically and mechanically equivalent or better

Contextual Info: bq2058 UNITRODE Lithium Ion Pack Supervisor for 3- and41M I Packs Features General Description >• P ro tects an d indiv id u ally m oni­ to rs th re e or four Li-Ion series cells for overvoltage, u n d erv o lt­ age The bq2058 Lithium J visor is designed

Contextual Info: _ bq2058 BENCHMARQ Lithium Ion Pack Supervisor for 3 -and 4-Cell Packs Features General Description >• P ro te c ts a n d in d iv id u a lly m o n i­ to r s t h r e e o r fo u r L i-Io n s e rie s cells fo r o v e rv o ltag e , u n d e rv o lt­

IRF 1640 G

Abstract: IRF 1640 DD-10V
Contextual Info: 4703B/4703BX FIRST-IN FIRST-OUT FIFO BUFFER MEMORY FA IR CH ILD CMOS MACROLOGIC DESCRIPTIO N — The 4703B /4703B X is an expandable fall-through type high-speed First-In First-O ut (F IF O ) B uffe r M em ory optim ized fo r high speed disc or tape c o n tro l­

Contextual Info: T O S H IB A GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. 1 5 .8 ± 0 .5 i • High Input Impedance • High Speed • Low Saturation Voltage : VGE sat = 3.4V (Max.)

Contextual Info: ERD29 2 .5A : O u tlin e D ra w in g s FAST RECOVERY DIODE : Features • 1 £ tjv : M arkin g Large current High voltage by mesa design. Ä 7 - 3 - K : 8! Color code : Green • ttflMXtt High reliability Abridged type name ^ §! -ÖlN| MŒ.9 ? x Voltage class

4040 FAIRCHILD

Abstract: IRF 1640 irf 250 for rf slimming 4000B 4703B 4703BX
Contextual Info: 4703B/4703BX FIRST-IN FIRST-OUT FIFO BUFFER MEMORY FA IR C H ILD CMOS MACROLOGIC DESCRIPTIO N — The 4703B /4703B X is an expandable fall-through type high-speed First-In First-O ut (F IF O ) B uffer Memory optim ized fo r high speed disc or tape co n tro l­

stk4144

Abstract: surround amplifier STK4100 transistor 6j STK4199MK2 STK4205 STK4159 STK444 J-120 MG-200
Contextual Info: O rd e rin g num ber : EN421ÔA Tbick-film Hybrid Integrated Circuit HIC STK4199MK2 No. 4218A SA\YO Audio Power Amplifier (THD = 0.3%) 25 W + 50 W + 25 W I /> " Ä Overview Package Dimerçéior# " Recent audio-visual television sets generate more impressive images by making the images higher in

FC51

Contextual Info: 2SC4419 IMPN = T R IP L E D IFFU SED PLAN ER T Y P E # w j± , ft ; t z j v r x f m h ig h v o lt a g e , h ig h speed s w it c h in g A ! : Outline Drawings 4.5,<w- 20 ‘ : Features High voltage, high speed switching High reliability • fc f flit t V.

trf 640

Abstract: trf 640 a IRF 640 ldft 496-BIT master slave jk flip flop F403 DSD- 230
Contextual Info: 403 54F/74F403 Connection Diagrams First-In First-Out FIFO B uffer M em ory T ¡R f H ~ >tion p l expandable fall-through type high-speed First-In First-O ut ory optim ized fo r high-speed d is k o r tape co n tro lle rs u ffe r applications. It is organized as 16-words by

Contextual Info: _ b q 2 0 5 8 BENCHMARQ Lithium Ion Pack Supervisor for 3 -and 4-Cell Packs Features General Description >• P ro te c ts a n d in d iv id u a lly m o n i­ to r s th r e e or fo u r L i-Io n s e rie s cells for o v e rv o ltag e , u n d e rv o lt­

2sk1217

Abstract: 2SK1217-01R 1217-01R
Contextual Info: 2SK1217-01R FUJI POWER MOS-FET N - C H A N N E L S IL IC O N P O W E R M O S - F F.T _ - T T ^ r - r * i r- F -ll SERIES lOutline Drawings • Features • High speed switching • l.ow on-resistance • No secondary breakdown • Low driving power

Contextual Info: F A I R C H F9423 FIFO Buffer Memory I L D A S chlum berger C om pany M ic ro p ro c e s s o r P ro d u c t D escription Device Organization T h e F a irc h ild F9423 is an e x p a n d a b le fa ll-th ro u g h -ty p e h igh -spe ed firs t-in , firs t-o u t FIFO b u ffe r m e m o ry th a t is

D1088

Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
Contextual Info: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o

irf3245

Abstract: irf d10 diode B253 B256 F9423XC ffs 642
Contextual Info: F9423 FIFO Buffer Memory FA IRCHILD A S chlum berger Com pany M ic ro p ro c e s s o r P ro d u ct Description Device O rganization The F a irc h ild F9423 is an e x p a n d a b le fa ll-th ro u g h -ty p e h igh -spe ed firs t-in , firs t-o u t FIFO b u ffe r m e m o ry th a t is

Contextual Info: Inverse Type Gds A-M Number of contacts 7 8 + 2, 6 0 + 4 4 2 + 6, 2 4 + 8 6+10 Female Connectors Identification Female Connector with angled solder pins Number of Contact contacts arrangement 78 + 2 Part No. 1 24 6610121416• : gps&sss: ! Performance levels according to DIN 41 612, explanations page 10

Contextual Info: II TC74HC194AP/AF 4 - B I T PIPO S H I F T R E G I ST E R The TC74HC194A is a high speed CMOS BIDIRECTIONAL SHIFT REGISTER fablicated with silicon gate C 2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power

BZX75C1V4

Abstract: SAA3004
Contextual Info: D E V E LO P M E N T SAMPLE D A T A SAA3004 T h is in fo r m a tio n is d e riv e d fr o m d e v e lo p m e n t sam ples m ad e a v a ila b le f o r e v a lu a tio n , I t does n o t necessanty im p ly th a t th e d e v ic e w ill go in to regular p r o d u c tio n ,

KS011S

Abstract: samsung p28 6-bit ram-dac video converter amplifier 3HH cga 624 KS0117 WVS 64 256X8 CK27 HN10
Contextual Info: PRELIMINARY KS0119 MULTIMEDIA VIDEO NTSC ENCODER The KS0119 NTSC encoder is a member of the Samsung multimedia chip family. It combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either

CS0149

Abstract: TDA2040
Contextual Info: SGS-THOMSON D g^(Q EL[E(gTr^ iö©i TDA2040 20W Hi-Fi AUDIO POWER AMPLIFIER The TD A 2040 is a monolithic integrated circuit in Pentawatt package, intended for use as an audio class A B amplifier. Typically it provides 22W output power (d = 0.5%) at Vs = 32V/4J2.

NEC 743 lf

Abstract: 2SA1743 transistor 2sa1
Contextual Info: ~t — S 7 • 5/ — h NEC ,< * 7 — Silicon P o w e r T ran sis to r 2SA1 7 4 3 ' □ PNP X i i f f l L T WA £ 2SA1743 ii, ÜÏ&X>f - v f X y i 7 "C” L o w V c E s a t) T ” h F E W t - |-7 > D C / D C => > ' < - 9 ^ T ( ^ - f i : mm) 9 F 7 ^ '* t L t t l f ' t o

Contextual Info: 10 1+13 N O T E S I. MATERIAL lO y O C : 7 0 7 5 0 4 6 . + 2 4 * 1* . U L 9 4 V - 0 HOUSING A (2.4) - a w io T E R M IN A L \ a E A x A 75T H -9 : + 9 + i 4 U ; v m + * 7 K 0 0 7 .00* . U L 9 4 V —0 (SO ACTUATOR POLYPHENYLENE SULFIDE .GLASS FILLED . UL94V-0IBLACK)