TIEL Search Results

EN 60947-5-1

Abstract: Bernstein 32457 c947 bernstein IEC 947-5-1 ENK-SU1Z Riw 60947-5-1 Bernstein en 60947-5-1 Bernstein D 32457 bernstein temperature
Contextual Info: Bernstein AG Tieloser Weg 6 D - 32457 Porta Westfalica Technical data sheet 608.1167.008 ENK-SU1Z Riw 18 3.9 R Positive opening operation according to DIN EN 60947-5-1 IEC 947-5-1 On 16 5.3 Off 0mm 9N 1 3 15 13 14 21 22 4.5 5.5mm 30 40 Pg13.5 29 8N Switching

Contextual Info: Philips Semiconductors Product specification PHP55N03T TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance

T7241

Abstract: T7202 t724 difference between EN8 EN3 difference between EN8 EN9 EN11 IC TTL 7495 diagram and truth table TP05 EN10 32C54
Contextual Info: T & T tIELr.C I C bME » • 0050QSb DG10123 2bl M A T T E Preliminary Data Sheet September 1992 M A T C T Microelectronics T7241 Multiple Ethernet Transmitter (METRX) Features Description ■ Twelve 10Base-T transmitters TheT7241 Multiple Ethernet Transmitter (METRX) is

BUK455-600B

Abstract: BUK455 600B
Contextual Info: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies

3040-1-D

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

K953

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on B U K9535-55 T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’

Philips transistor k1

Contextual Info: Phi l i ps S e m i c o n d u c t o r s Obj ec t i v e speci f i cat i on BU K 7 5 1 4 - 6 0 T r e n c h M O S transistor S t a n d a r d level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using

K9520-55

Abstract: k952
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’

K752

Contextual Info: Phi l i ps S e m i c o n d u c t o r s Obj ec t i v e speci f i cat i on B U K7524-60 T r e n c h M O S transistor S t a n d a r d level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

Contextual Info: Data sheet status Product specification date of issue March 1991 PHILIPS INTERNATIONAL PowerMOS transistor ^ GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a lastic full pack envelope, he device is intended for use in Switched Mode Power Supplies

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

philips zener diode

Abstract: transistor 75 U50
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

10VR

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’trench’ technology. The device teatures very low on-state resistance

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using

LT1N53

Contextual Info: Chip LED Devices SHARP E-LEK/ tIELEC DIV Radiation shape mm Lens type PR Red LR Red (HL)*1 TR Red (HL)*i HD Red HS Sunsetorange HY Yellòw EG Yellowgreen (HL)*1 NG Yellowgreen KG Green (HL)*1 PG Green 11 1 3i GL1LR51 GL1PR51 GL1TR51 GL1HD51 GL1HS51 GL1HY51 GL1EG51 GL1NG51 GL1KG51 GL1PG51

"Differential Amplifier"

Contextual Info: TO-116 CB-2 Integrated circuits - Transistors arrays C ir t u it s in té g ré s - R é s e a u x d e tra n s is to rs Applications Ap plication s Type S u ffix Type Suffixe D ifferential am plifier + 3 transistors A m p lifica te u r d iffé re n tiel +3 transistors T B A

Contextual Info: H - _ J NOTES’ ' . . . . l WiS SPUCE TERMNAlTSHAiL .NOT EXTENDMORE rrVW OTTO/OSO Et.YONO . T iJ ^ iE L v u g c jr am E ;. - > '.V .MOLDING COMPOUND. U -.c hCCtOf^MEC^CGRAY. :M TERMINAL MATl l 3/4 HARD BRASS,'- - - "^XO FR tiEL-ATED -W /TH TS.,

Contextual Info: S ync S e p a ra to r w ith AFC LVA519 MâïSUMÎ M onolithic IC LVA519 This is a sync separator IC with AFC. Stable operation even in a weak electric tield is made possible with the built-in AFC circuit. A regulator also is built in, providing stable operation relative to power supply and