TIC2 Search Results

triac tic263

Abstract: tic 253 7B222
Contextual Info: S E R IE S TIC 253 , TIC263 S IL IC O N B ID IR E C T IO N A L T R I O D E T H Y R IS T O R S g fl r 3> TRIACS 20 A and 25 A RMS • 200 V, 400 V , 500 V, and 600 V PS Sd description v> o K These devices are bidirectional trio d e thyristors triacs) which m ay be triggered from the off-state by either po la rity of

TIC208

Abstract: TIC206 TIC20S TIC206 Series tic205
Contextual Info: SERIES TIC20S, TIC206 SILICON BIDIRECTIONAL TRIODE THYRISTORS S E N S IT IV E -G A T E T R IA C S tu «n cr 3¡5> 2 A R M S Series TIC205 "È 3 A R M S (Series TIC206) M PS Siin 100 V, 200 V, and 400 V V d r M description These devices are bidirectional triode thyristors (triacs) w hich m ay be triggered from the off-state to the on-state by

TIC216

Abstract: TIC216D TIC216M TIC216N 15-V TIC216S
Contextual Info: TIC216 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

TC07AA

Abstract: TIC225 TC07AB TIC225M 15-V TIC225D TIC225N TIC225S
Contextual Info: TIC225 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrant 1 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

TIC236 application note

Abstract: TIC236N apply TIC236 TIC236M 15-V TIC236D TIC236N TIC236S
Contextual Info: TIC236 SERIES SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 50 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.

TIC246 Series

Abstract: TIC246M TIC23 TIC246 tic236
Contextual Info: S E R IE S TIC236, TIC246 SILICON BIDIREC TIO NAL TRIODE THYRISTORS description These devices are bidirectional triod e thyristors triacs which m ay be triggered from th e off-state by either po la rity o f gate signal w ith M ain Term inal 2 a t either p o la rity. This triac is available in the isolated tab package as a special device.

TIC246 Series

Abstract: TIC246 TIC246D TIC246M 15-V TIC246N TIC246S
Contextual Info: TIC246 SERIES SILICON TRIACS Copyright 2000, Power Innovations Limited, UK ● High Current Triacs ● 16 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 125 A Peak Current ● Max IGT of 50 mA Quadrants 1 - 3 DECEMBER 1971 - REVISED JUNE 2000

TIC266M

Abstract: 15-V TIC266 TIC266D TIC266N TIC266S
Contextual Info: TIC266 SERIES SILICON TRIACS Copyright 1997, Power Innovations Limited, UK ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA Quadrants 1 - 3 JULY 1991 - REVISED MARCH 1997

TIC225D

Abstract: TIC225M equivalent datasheet TIC225M equivalent TIC225 TIC225 Series TI07 TIC225M 15-V TIC225N TIC225S
Contextual Info: TIC225 SERIES SILICON TRIACS Copyright 1997, Power Innovations Limited, UK ● Sensitive Gate Triacs ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA Quadrant 1 JULY 1975 - REVISED MARCH 1997 TO-220 PACKAGE

tic206d

Abstract: TIC206M TIC206C TIC206E
Contextual Info: TEXAS INSTR -COPTO! 8961726 TEXAS Ait, 175b 0D3fci7Dfl IN S T R 62C 36 708 O P T O D TIC206A, TIC206B, TIC206C, TIC206D, TIC216E, TIC206M, TIC206S, TIC206N SILICON TRIACS REVISED OCTOBER 1984 T~^ ST-/3 • Sensitive-Gate Triacs • 100 V to 800 V • 4 A RMS

tic225m

Abstract: TIC225D
Contextual Info: "té TEXAS INSTR -COPTO} D E| 0 0 B t.7 1 fi 62C 36718 S 9 6 1 7 2 6 TEXAS INSTR C O P T Ò T TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M, TIC225S, TIC225N SILICON TRIACS R E V ISE D OC TO BER 1984 • Sensitive-GateTriacs T - 2* S T - / S • . 100 V to 800 V

TiC216

Abstract: TIC216 Series
Contextual Info: TIC216 SERIES SILICON TRIACS Copyright 2001, Power Innovations Limited, UK ● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA Quadrants 1 - 3 DECEMBER 1971 - REVISED MARCH 2001 TO-220 PACKAGE

triac tic263

Abstract: TIC263 TIC253 T1C253 TIC263 Series 15-V
Contextual Info: SERIES TIC253, TIC263 SILICON BIDIRECTIONAL TRIODE THYRISTORS T R IA C S 20 A and 25 A R M S • 200 V, 400 V . 500 V , and 600 V description These devices are bidirectional triode thyristors Itriacs w hich m ay be triggered from the off-state b y either polarity of

TIC226D

Abstract: TIC226 TIC226D, TIC226B TIC226B tic226d data thyristor tic 126 tic 226 all types of thyristors tic 226d TIC226d application data
Contextual Info: TYPES TIC226B, TIC2Z6D SILICON BIDIRECTIONAL TRIODE THYRISTORS 8 A RMS • 200 V and 400 V TR IA C S for HIGH-TEM PERATURE, HIGH-CURREN T, and H IGH-VO LTAGE APPLICATIONS • Typ dv/dt of 500 V//us at 25°C description These devices are bidirectional triode thyristors triacs which may be triggered from the off-state to the on-state by

triac tic216m

Abstract: TIC216D TIC216M TIC216B 15-V TIC216A TIC216N TIC216S SENSITIVE GATE TRIACS, to220
Contextual Info: SEMICONDUCTORS TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON BIDIRECTIONAL TRIODE THYRISTOR • • • • • • 6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA Quadrants 1-3 Sensitive gate triacs Compliance to ROHS

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 TIC216D Triacs FEATURES • With TO-220 package • Sensitive Gate Triacs • Glass Passivated • Max IQT of 5 mA (Quadrants 1~3) ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

TIC226N

Contextual Info: <^£.mL-dondackoi 'iPioduati, L/nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Triacs TIC226N FEATURES • With TO-220 package • Sensitive Gate Triacs • Glass Passivated • Max IGT of 50 mA (Quadrants 1~3)

TIC246M

Contextual Info: . Line. LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Triacs TIC246M FEATURES • With TO-220 package • Sensitive Gate Triacs • Glass Passivated • Max IGT of 50 mA (Quadrants 1-3) ABSOLUTE MAXIMUM RATINGS(Ta=25 C)

tic206d

Contextual Info: , Line. JZIIEU <^£.mi- Lonau.ctoi TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Triacs TIC206D FEATURES • • • • With TO-220 package Sensitive Gate Triacs Glass Passivated Max IGT of 5 mA (Quadrants 1 ~3)

Triacs equivalent

Abstract: 15-V TIC201 TIC201D TIC201M TIC201N TIC201S
Contextual Info: TIC201 SERIES SILICON TRIACS Copyright 1997, Power Innovations Limited, UK ● Sensitive Gate Triacs ● 2.5 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA Quadrant 1 JANUARY 1977 - REVISED MARCH 1997 TO-220 PACKAGE

TIC236M

Abstract: TIC236 Triacs equivalent 15-V TIC236D TIC236N TIC236S TIC236 Series
Contextual Info: TIC236 SERIES SILICON TRIACS Copyright 1997, Power Innovations Limited, UK ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA Quadrants 1 - 3 DECEMBER 1971 - REVISED MARCH 1997 TO-220 PACKAGE

TIC263

Abstract: tic253 triacs 12V1 15-V T1C253 TIC263 Series
Contextual Info: TEXAS INSTR ÏÏ5 -COPTO} DE I f i T t l i 7 2t a 690*72^ TEXAS IRSTR COPTOT 0D3ti73ö 62C 36738 SERIES TIC253, TIC263 SILICON TRIACS REVISED OCTOBER 1984 High-Current Triacs 1 0 0 V to 8 0 0 V . 12 A and 16 A R M S 1 0 0 A and 12 5 A Peak Current M ax IGT of 5 0 mA Quadrants 1 -3

TIC226

Abstract: TIC226d application data tic226d TIC226 Series tic226d datasheet 15-V TIC226M TIC226N TIC226S
Contextual Info: TIC226 SERIES SILICON TRIACS Copyright 1997, Power Innovations Limited, UK ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA Quadrants 1 - 3 APRIL 1971 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW)

Contextual Info: TIC216 SERIES SILICON TRIACS ● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer MT1 1 ● 400 V to 800 V Off-State Voltage MT2 2 ● Max IGT of 5 mA Quadrants 1 - 3 G 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base.