TIC 2530 Search Results

k460

Contextual Info: E 25/13/7 EF 25 Core • • B66317 In accurdarice wilh IEG 1246 E cores are supplied as pieces M a g n e tic c h a ra c te ris tic s (per set) 'Ll/A = 1 ,1 mm-1 /e Ae A min l/e = 57,5 mm = 52,5 m m z = 51,5 m m 2 = 3 020 m m 3 A pprox. w eight 16 g/se1

B64290K618X830

Abstract: B64290-K38-X830 B64290-K45-X830 B64290-K618-X830 B64290K632X830 B64290-K674-X830 B64290-K40-X830 B64290K44X830 B64290-K659-X830 B64290-K45-X27
Contextual Info: Ring Cores Coated ring cores are primarily used for pulse and broadband transformers as well as for balanced mixers and chokes. -ì h FUS0Q17-P C o re type D im ensions 2,5 1 0,12 R 4 1 4,5 R 6 . 3 1 I f /A h mm mm R 2 ,5 1? A p pro x. w e ig h t M a g n e tic c h a ra c te ris tic s

ubl21

Abstract: 1S49
Contextual Info: UBL21 DUODIODE—OUÎPUT PENTODE DUODIODE-PENTHODE DE SORTIS DUODIODE-ENDPENTHODE Only to "be used with self-bias or with semi-automa­ tic bias N ’utiliser qu'avec polarisation automatique ou semi aut oraaticjue Nur mit automatischer oder, halbautomatischer Git­

Contextual Info: HEWLETT-PACKARD/ CMPNTS Ihft blE D HEW LETT PACKARD • 4 4 l47Sfll4 □ □Obliti 23b ■ H P A DUAL HIGH SPEED OPTOCOUPLER HCPL-2530 HCPL-2531 HCPL-4534 SC H E M A TIC ° HCPL-4534 SHIELD L - i c : load and a 5.6 kfi pull-up resistor. CTR of the -2531 is 19%

6122T

Contextual Info: m HEW LETT PACKARD DUAL HIGH SPEED OPTOCOUPLER HCPL-2530 HCPL-2531 HCPL-4534 S C H E M A TIC loa d and a 5.6 k l i p u ll-u p resistor. C TR o f th e -2531 is 19°« m in im u m at I f = 16 mA. Features • HIGH SPEED: 1 Mb/s • TTL COMPATIBLE • VERY HIGH COMMON MODE TRANSIENT

G1822

Abstract: G18185JN G1828
Contextual Info: Panasonic Plastic Film Capacitors = E quipped w ith a S afety M echanism = M etallized P olyester/P olypropylene Film C apacitor Type: ECWG N o n -in d u c tiv e c o n s tru c tio n , F la m e -re ta rd a n t p la s tic case, Fast-on type/Lead w ire type • Features

2530N

Contextual Info: S ig n e tic s Memories - M O S R O M S 2530 — 4096 Bit High Speed Static MOS ROM 512 x 8 G E N E R A L D E S C R IP T IO N T he 2 5 3 0 has a read input w hich con trols the entry of data from the R O M into o u tp u t latches. Three-state outputs allow O R -ty in g for im plem enting larger memories. T w o mask

mbrf 100 ct

Abstract: 2S60 MBRF2535CT lc125
Contextual Info: E RoHS TAIWAN SEMICONDUCTOR MBRF2535CT - MBRF25150CT Isolated 25.0 AM PS. Schottky Barrier Rectifiers 1TO-22QAB C O M P L IA N C E Features •> •$•?- ❖ ❖ -4- P laB tic m a te ria l u e a d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s S 4V -0

088SA

Abstract: high speed OPTOCOUPLERS CPL-2531
Contextual Info: ni C R O P A C INDUSTRIES INC 45E D B b l l 2 b 4 0 OQaGat,S 2 • HPI 66088 SINGLE/DUAL CHAN N EL HIGH SPEED OPTO COUPLERS FEATURES • APPLICATIONS H e rm e tic a lly s e a le d E le c tric a lly s im ila r to 4N 55 • M ic r o p r o c e s s o r s y s te m in te r fa c e

AM9216

Abstract: IM7780 AM2111 IM7552 9316A AM9208 signetics 2524 2102 ram fairchild AM9060 Signetics 2518
Contextual Info: S ig n e tic s M em ories M O S RAMs AMD A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 02/ 9 10 2 AM 9060 AM 9216 AM 9208 AM 1402 A M 1403 A M 140 4 AM 1405 A M 150 6 A M 1507 A M 2806 AM 2807 AM 2808 AM 2809 AM 2833 M O S M EM O R Y C RO SS R E FE R E N C E

M 2530 motorola

Abstract: motorola M 2530 transistor rf m 2528
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor MRF555 D e sig n e d p rim a rily fo r w id e b a n d larg e sig n a l p re d riv e r sta g e s in th e U H F fre q u e n c y range. • S p e cifie d @ 12.5 V, 4 7 0 M H z C h a ra c te ris tic s @ P0U = 1.5 W

3DD13001

Contextual Info: m c c TO -126 P la s tic -E n c a p s u la te T ra n s is to rs ^ 3DD13001 T R A N S IS T O R N P N FEATU R E S I p p é r ^ e tM jà r tlo n Pcm ; . 1W (Tamb=25"C) •eanireiii^ -base voltage V(BR)côo: 600 V &tyfÿniQtig.-sfttf s to ra g e ju n c tio n te m p e ra tu re ra n g e

K4096

Abstract: Motorola 6830 M 2530 motorola KS 2102 intel 2101 INTEL 1404A Signetics 2518 AM9216 9316A 2627 "cross reference"
Contextual Info: S ig n e tic s Memories MOS RAMs AM D A M 2 1 01/9101 A M 2 1 11/9111 A M 2 1 12/9112 A M 2 1 0 2 /9 1 0 2 AM 9060 AM 9216 AM 9208 A M 1402 A M 1403 A M 1404 A M 1405 A M 1506 A M 1507 A M 2806 A M 280 7 AM 2808 AM 2809 AM 2833 MOS M E M O R Y CROSS R E FER EN C E

Contextual Info: CD 286 GK Series 2000h a t 105°C L o w Im p e d a n c e S u ite d fo r s w itc h in g p o w e r s u p p lie s H ig h rip p le c u r r e n t c a p a b ilit y 85t CD 110PT CD 286 GK lo n g e r life CD 287 GC Ite m C h a ra c te ris tic s O p e ra tin g T e m p e ra tu re R a n g e °C

Contextual Info: 25307^2 Ratings TET «CO L and characteristics □ OOSm.G of Fuji I GBT M B T Module 2 . Equivalent Circuit of Module 3 . Equivalent Ci rcui t -r4CO -OE ~ \/z -D Current Control Ci rcui t ó 4 . Absolute Maxima Ratings ( Tj =25 *C) Items This material and the information herein ¡s the property of

a2530

Abstract: a 2530 TDA25 la 4287 diagram LG TV circuits TDA2530A
Contextual Info: TDA2530 ^ RGB MATRIX PREAMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N ER A L D E SC R IP TIO N - The TD A 2530 is a m onolithic RGB m atrix pream plifier fo r c o lo r TV re ceivers. It is c o n stru cte d using the F a irchild P lanar* process. The

S12642

Abstract: S12642-0404PA-50 L10941-01 S12642-0404PB-50 HAMAMATSU L9181
Contextual Info: 2014 02 COVER STORY PAGE 2 Life Photonics – Innovative Solutions for Global Challenges OPTO-SEMICONDUCTOR PRODUCTS PAGE 10 Maximise MPPC performance with new MPPC modules ELECTRON TUBE PRODUCTS PAGE 14 Flat panel type PMT with high collection efficiency, H12700

undervoltage relay

Abstract: Boveri voltage regulator BROWN BOVERI protection relay RXEB B03-9301E relay in ac application BROWN BOVERI DM relay ASEA PLUG IN RELAY On-Load Tap changer BROWN BOVERI relay
Contextual Info: M u » ASEA BROWN BOVERI Type RXEB 2 B03-2530 ABB Relays In s ta n ta n e o u s a c o r d c o v e r - o r u n d e rv o lta g e re la y s oatasubject tochangew»»« no*» Abstract • Medium - speed operation • High accuracy: <1 % consistency of operating value

tRPW10

Abstract: tad 2530 2530N CM3530
Contextual Info: sig n o tiB s HIGH SPEED 512x1 STATIC READ-ONLY MEMORY 2530 SILICON GATE MOS 250Û SERIES DESCRIPTION PIN CONFIGURATION Top View The 2530 is a high speed 4 ,096-bit* Static Read-Only Memory available in a 512x8 organization. This device has T T L compatible inputs and outputs and requires +5V and

colour tv kit circuit diagram

Abstract: R1004 TDA2530 transistor r1004 V14 FAIRCHILD TDA2522 TDA2560 RGB MATRIX
Contextual Info: TDA2530 / RGB MATRIX PREAMPLIFIER FAIRCHILD LINEAR INTEGRATED CIRCUITS GE N ER A L D E SC R IP TIO N — The TD A 2530 is a m onolithic RGB m atrix pream plifier fo r c o lo r TV re ceivers. It is co n stru cte d using the Fa irchild P lanar* process. The

Contextual Info: f ü H U S E M I C O N D U C T O R U A R R I HA5351 S Fast Acquisition Sample and Hold Amplifier June 1994 Features Description • Fast Acquisition to 0.01%. 70ns Max The HA5351 is a fast acquisition, wide bandwidth sample and hold amplifier built with the Harris HBC-10 BiCM O S pro­

Contextual Info: 2530-N.I PIN CONFIGURATION DESCRIPTION The 2530 is a high speed 4,096-bit Static Read-Only Memory available in a 512x8 organization. This device has TTL compatible inputs and outputs and requires+5V and -12V power supplies. A READ input controls the entry of data from the ROM into output latches.

SN74AS644

Abstract: sn74as642 SN54ALS645A SN54AS640 SN54AS645 SN74ALS645A SN74AS640 SN74AS645 als641 sn74als644
Contextual Info: SN54A LS640A THRU SN54A LS645A , SN 54A S 640 THRU SN 54A S 645 SN74A LS640A THRU SN74A LS645A , S N 74A S 640 THRU S N 74A S645 OCTAL BUS TRANSCEIVERS D 2 6 6 1 , DECEMBER 19 8 3 - REVISED M A Y 198 6 S N 5 4 A L S ', S N 5 4 A S ' . . . J P AC KA G E S N 7 4 A L S ', S N 7 4 A S ' . . . D W OR N PAC KAG E

6MBP50NA060-01

Abstract: C17V VOC-300V WOE 331 6MBP50NA060
Contextual Info: F U JI B 1 A m , —I — , ^ lid t I G B T - I P M Ji . A J / / K. - h , ±m m 6 O O V /5 O A /6 Ì0 ÌS N y ' J - X B 3 • f# 7 1 1 — J Fuji New Semiconductor Products 6 M B P S o n a o 6o-o i Features • V 7 i f - v -f X • 3511*114 ■ L)w sw itchin g-surge and noise