TIC 220 Search Results

Contextual Info: Data Sheet TIC 300 PRO High Energy Tic Tracer – Non Contact AC Voltage Detector Rugged and reliable for utility, industrial and mine safety applications, The TIC 300 PRO warns against dangerous voltages in low and medium voltage applications up to 122 KV without

74381

Abstract: Arithmetic logic unit
Contextual Info: — 220 — 74381 A rith m e tic L o g ic U n it

HIGHWAY 09a ic

Abstract: HIGHWAY 09A Diode CK 99A bubble memory f173
Contextual Info: November 1980 NBM2011 1M x 1 Magnetic Bubble Memory Device General Description The NBM2011 is a 1,048,576 220 b it m a g n e tic b u b b le m em ory device. A ll required m a g n e tic co m p o n e n ts, in­ c lu d in g th e d rive fie ld c o ils , p erm a n e nt m a g n e ts and pro­

RCLED

Contextual Info: P R O D U C T IN F O R M A T IO N 1A47T a Plastic Optical Fiber Communication O p tic a l and B e c tric a l C h a ra c te ris tic s 125 coseTempefatuiei UMT TEST CONDITION /p=30mA Note 1 ^fiber 0.5 mW po 0.8 mW Beam Divergence (FWHM) ±10 deg Bandwidth

Contextual Info: I . I Preliminary Data Sheet PD-2.545 02/98 International l R Rectifier 48CTQ060 SCHOTTKY RECTIFIER 40 Amp M ajo r R a tin g s and C h a ra c te ris tic s D e s c rip tio n /F e a tu re s C h a ra c te ris tic s 48CTQ060 U n its lF AVj Rectangular 40 A 60

j 6815

Abstract: 21JP2-R
Contextual Info: DATA DISPLAY PRODUCTS blE J> m 2b44S20 DDOGbEO 247 « D D P ¡Sfili] M ULTI-CHIP LED s , 6-Chip Parallel D ata D isp lay P ro d u cts • Red, Orange, Amber, Yellow, Green, Blue, Red/Green • Parallel Configuration • Ceramic Substrate E le c tr o - O p tic a l C h a r a c te r r is tic s @ Ta = 25°c

D431016LE

Abstract: HART3 d431016 IC-3243 MARKING TP NEC 431016LE-1
Contextual Info: MOS INTEGRATED CIRCUIT juPD431016 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description T h e /JPD431016 is a h ig h speed, lo w p o w e r, 1 048 576 b its 65 536 w o rd s by 16 b its C M O S s ta tic R A M . T h e /iP D 431016 are packed in 4 4 -pin p la s tic SOJ.

TPS 1028

Abstract: 3 DG 1008 MBM2011A MIL-883 bubble memory PS512
Contextual Info: MOTOROLA □ A d v a n c e Inform ation GENERAL DESCRIPTION 1 M X 1 BIT MAGNETIC BUBBLE MEMORY DEVICE The M BM 2011A is a 1,048,576 2^0 b it m a gn e tic b u b b le m e m ­ o ry device. A ll re qu ire d m a gn e tic co m p o n e n ts, in c lu d in g p er­

B64290K618X830

Abstract: B64290-K38-X830 B64290-K45-X830 B64290-K618-X830 B64290K632X830 B64290-K674-X830 B64290-K40-X830 B64290K44X830 B64290-K659-X830 B64290-K45-X27
Contextual Info: Ring Cores Coated ring cores are primarily used for pulse and broadband transformers as well as for balanced mixers and chokes. -ì h FUS0Q17-P C o re type D im ensions 2,5 1 0,12 R 4 1 4,5 R 6 . 3 1 I f /A h mm mm R 2 ,5 1? A p pro x. w e ig h t M a g n e tic c h a ra c te ris tic s

Contextual Info: yAiSHi MINIATURE A L U M IN U M E LE C T R O L Y TIC C A P A C IT O R S HP Standard bi-polarized series ® Endurance :+105°C 1,000 hours ® RoHS Compliant ♦ SPECIFICATIONS Ite m s C h a r a c te r is tic s Category T e m p e ra tu re Ran ge -40 to +105°C 6.3 to 100Vdc

TIC 220

Abstract: D257 D792 TIC1000A
Contextual Info: TIC 1000A High Performance, Value Compound for High-End Computer Processors Features and Benefits • High thermal performance: 0.32°C/W TO-220 thermal test @ 50 psi • Good screenability • Room temperature storage • No post “cure” required

m33 tf 130

Abstract: 1001 fba hybrid
Contextual Info: Am79C02/03/031 A A M D ÎI Dual Subscriber Line Audio ProcessingCircuit (DSLAC ) Devices TABLE OF CONTENTS Distinctive C h a ra c te ris tic s .2-7

mc10182

Contextual Info: MOTOROLA MC10182 2-BIT ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR The M C 10182 is a h ig h-speed a rith m e tic lo g ic unit cap a ble o f p erform ing 4 lo g ic o p e ra tio n s and 4 a rith m e tic o p e ratio n s on tw o 2-bit w o rd s. Full internal carry is incorpo rated fo r arith m etic

74181

Abstract: ALU pin specification 74181 ttl 74181 74181 ALU alu 74181 74181 pin diagram 74181 pin configuration circuit ALU 74-181 alu 74181 logic 74181 pins diagram
Contextual Info: Signetics 74181, LS181, S181 Arithmetic Logic Units 4-Bit Arithmetic Logic Unit Product Specification Logic Products FEATURES TYPE • P ro v id e s 16 a rith m e tic o p e ra tio n s : A D D , S U B T R A C T , C O M P A R E , D O U B L E , plus 12 o th e r a rith m e tic o p e ra tio n s

Contextual Info: I ntegrator Series FPGAs: 40MX and 42MX Fami Ii es Single-Chip ASIC Alternative Features • 9 5 -1 0 0 % Resource U tiliz a tio n , Using A u to m a tic Place and R o u te T o o ls w ith up to 100% Pin F ixing. • D e te rm in is tic , U s e r-C o n tro lla b le T im in g Via D ire c tT im e

radiall vfo FR

Abstract: vfo radiall
Contextual Info: VFO-MP series CONTENTS r SYSTEM OPTABALL VFO General . 5 -6 Performance / c h a ra c te ris tic s . 7 Polishing option id e n tific a tio n .

6265 SRAM

Contextual Info: MOSEL- VITELIC MS6265 8K x 8 SLOW SPEED CMOS STA TIC RAM ULTRA LOW DATA RETENTION CURRENT Features Description • Available in 100 ns Max. ■ Automatic power-down when chip disabled ■ Lower power consumption: MS6265 - 220mW (Max.) Operating - 5.5|iW (Max.) Power Down

F10581

Abstract: F10181 F10179 F1018 fairchild ECL
Contextual Info: F10181^ F10581^ 4-BIT ALU/FUNCTION GENERATOR F10K VOLTAGE COMPENSATED ECL D E S C R IP T IO N — T h e F10181 a nd F10581 a re h ig h -s p e e d a rith m e tic logic units c a p a ­ ble o f p erform ing 16 lo g ic o p era tio n s and 16 a rith m e tic op era tio n s on tw o 4 -b it w ords.

MBM2256

Contextual Info: MOTOROLA MBM2256 Advance Information G E N E R A L D E S C R IP T IO N 256 K x 1-BIT MAGNETIC BUBBLE MEMORY DEVICE The M B M 2256 is a 262,144 2 ^ 1 b it m a gn e tic b u b b le m e m o ry device. A ll re q u ire d m a g n e tic co m p o n e n ts in clu d in g the p e rm a ­

16MV100HC

Contextual Info: Aluminum Electrolytic Capacitors • Guide to Use of A lu m in u m SANYO E lectrolytic C a p acito rs Please observe the f o l l o w i n g guidelines when using Sa nyo a l u m i n u m e l e c t r o ly tic c a pa c ito rs . 1. P o l a r i z a t i o n o f e l e c t r o ly tic c a p a c ito rs

photo transistor til 78

Abstract: MAX3667
Contextual Info: 19-1311; R ev 1 ;3 /9 8 A i > i x i y k i +3.3V, 6 2 2 M b p s SD H / SON E T L a s e r D r i v e r w ith A u to m a tic Power Control The M AX3667 is a com plete, + 3.3V laser d rive r with a u to m a tic p ow er co n tro l APC , d e sig n e d for SDH/ SONET applications up to 622M bps. It accepts differ­

Contextual Info: UNCONTROLLED DOCUMENT S C '.0.50 PART NUMBER REV. SSL—LX507E3SRC PRELIM INARY IN P / N DIR 4,60 [0,181] 5,80 [0,228] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2S'C PARAMETER MIN PEAK WAVELENGTH 4,40 1.B 5,60 7 .8 I— CO. 220] [0.307] 4,60 [0,181] 5.80 UNITS

BV 1 501

Abstract: BV 501
Contextual Info: KSC5021F NPN SILICO N TRANSISTO R HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • HIGH SPEED SWITCHING : tf=0.1usfTyp • WIDE SOA ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol Rating U nit Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage

Contextual Info: NPN TRIPLE DIFFUSED PLANER SILICON TRANSISTOR KSC5327 HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION TO -220 * High Speed Sw itching * W ide S O A * High C ollector-Base Voltage ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Symbol R a tin g C ollector-Base Voltage