TI 906 KOREA Search Results

Contextual Info: 2SC4260 Silicon NPN Epitaxial REJ03G0718-0300 Previous ADE-208-1098A Rev.3.00 Aug.10.2005 Application UHF frequency converter, Wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note:

TI 906 KOREA

Abstract: 2SC4260 2SC4260TI-TL-E PTSP0003ZA-A
Contextual Info: 2SC4260 Silicon NPN Epitaxial REJ03G0718-0300 Previous ADE-208-1098A Rev.3.00 Aug.10.2005 Application UHF frequency converter, Wide band amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Emitter 2. Base 3. Collector 1 2 Note:

2SK2684

Abstract: 2SK2684L-E 2SK2684STL-E PRSS0004AE-A
Contextual Info: 2SK2684 L , 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current

Contextual Info: Preliminary Datasheet RJP6016JPE 600 V - 40 A- N Channel IGBT High Speed Power Switching R07DS0878EJ0100 Rev.1.00 Sep 19, 2012 Features • For Automotive application  AEC-Q101 compliant  Low collector to emitter saturation voltage. VCE sat = 1.7 V typ. (IC = 20 A, VGE = 15 V, Ta = 25 C)

Contextual Info: 2SC4197 Silicon NPN Epitaxial REJ03G0717-0300 Previous ADE-208-1097A Rev.3.00 Aug.10.2005 Application UHF frequency converter, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note:

RJK0394DPA

Abstract: RJK0394DPA-00-J53
Contextual Info: RJK0394DPA Silicon N Channel Power MOS FET Power Switching REJ03G1785-0200 Rev.2.00 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 4.1 mΩ typ. (at VGS = 10 V)

i-mag 0124

Abstract: 2SC4197 2SC4197TI-TL-E SC-59A
Contextual Info: 2SC4197 Silicon NPN Epitaxial REJ03G0717-0300 Previous ADE-208-1097A Rev.3.00 Aug.10.2005 Application UHF frequency converter, wide band amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 2. Base 3. Collector 3 1 2 Note:

RJK0354DSP

Abstract: RJK0354DSP-00-J0
Contextual Info: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03M9DNS Silicon N Channel Power MOS FET Power Switching R07DS0775EJ0120 Rev.1.20 May 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 9.2 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03E9DPA REJ03G1933-0210 Rev.2.10 May 20, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 3.5 m typ. (at VGS = 8 V)

Contextual Info: Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100 Power Switching Rev.1.00 Jun 15, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK0213DPA 25V, 60A, 2.3m max. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0943EJ0300 Rev.3.00 Mar 21, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current

Contextual Info: Preliminary Datasheet RJJ0621DPP-E0 R07DS0797EJ0100 Rev.1.00 Jun 08, 2012 P Channel Power MOS FET High Speed Switching Features •    VDSS : –60 V RDS on : 56 m (MAX) ID : –25 A Lead Mount Type (TO-220FP) Outline RENESAS Package code: PRSS0003AG-A

Contextual Info: Preliminary Datasheet RJK0354DSP Silicon N Channel Power MOS FET Power Switching REJ03G1661-0200 Rev.2.00 Apr 05, 2010 Features •    Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 5.4 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK03E9DPA 30 V, 35 A, 4.3 m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0300 Previous: REJ03G1933-0210 Rev.3.00 Nov 09, 2012 Features •       High speed switching Capable of 4.5 V gate drive

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Preliminary Datasheet RJK03E9DPA 30V, 35A, 4.3m max. N Channel Power MOS FET High Speed Power Switching R07DS0935EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

CANTON ELECTRONICS

Abstract: 2SC4260 2SC4260TI-TL-E PTSP0003ZA-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

RJK0631

Abstract: RJK0631JPR
Contextual Info: Preliminary Datasheet RJK0631JPR R07DS0879EJ0100 Rev.1.00 Sep 19, 2012 60 V - 30 A - N Channel Power MOS FET High Speed Power Switching Features •     For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 12 m typ. Capable of 4.5 V gate drive

M62301

Contextual Info: M62301SP/FP 10 to 12-bit 4-ch Integrating A/D Converter REJ03D0861-0200 Rev.2.00 Dec 15, 2006 Description M62301 semiconductor integrated circuit forms an integrating A/D converter, being connected to a microcomputer unit. By using selection signals and counter clock signals from the unit, a 10 to 12-bit A/D converter can be created at a low

Contextual Info: M62301SP/FP 10 to 12-bit 4-ch Integrating A/D Converter REJ03D0861-0300 Rev.3.00 Mar 25, 2008 Description M62301 semiconductor integrated circuit forms an integrating A/D converter, being connected to a microcomputer unit. By using selection signals and counter clock signals from the unit, a 10 to 12-bit A/D converter can be created at a low

TG 0201

Contextual Info: M62301SP/FP 10 to 12-bit 4-ch Integrating A/D Converter REJ03D0861-0201 Rev.2.01 Dec 27, 2007 Description M62301 semiconductor integrated circuit forms an integrating A/D converter, being connected to a microcomputer unit. By using selection signals and counter clock signals from the unit, a 10 to 12-bit A/D converter can be created at a low

Contextual Info: Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0200 Previous: REJ03G1718-0100 Rev.2.00 Mar 28, 2011 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package (MPAK)

Contextual Info: Preliminary Datasheet RQJ0305EQDQA R07DS0297EJ0300 Rev.3.00 Jan 10, 2014 Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional package MPAK