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    THN5601SF Search Results

    THN5601SF Datasheets (1)

    Tachyonics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    THN5601SF
    		Tachyonics NPN SiGe RF POWER TRANSISTOR Original PDF 327.76KB 11

    THN5601SF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Contextual Info: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		thn5601sfot-23f26dbm900mhz+11is21i16-2-472161-71745650transistor s 40442smd ic marking gpmarking am1 smd25804403 inductor coil smdrf npn power transistor c 10-12 ghzhn6501 PDF

    Transistor S 40442

    Abstract: THN5601SF 61529 78262 161-717 37185 177960 54368 120770 16-2-472
    Contextual Info: THN5601SF Semiconductor SiGe NPN Transistor Unit in mm SOT-23F □ Applications o VHF and UHF band medium power amplifier □ Features o 4.8 V operation o P1dB = 26 dBm at f = 900 MHz o GP = 9.0 dB at f = 900 MHz □ hFE Classification Pin Configuration Pin No


    Original     		thn5601sfot-23f300ghz500ghz+13700ghz900ghz000ghzis21itransistor s 404426152978262161-717371851779605436812077016-2-472 PDF