THETA JA OF 64-PIN BGA Search Results

amkor CABGA 56

Abstract: chiparray amkor CABGA 8X8 CTBGA CABGA 17 x 17 thermal resistance CABGA CVBGA MO-195 8x8 64 footprint amkor cabga
Contextual Info: LAMINATE data sheet CABGA/CTBGA/CVBGA Features: ChipArray Packages: Amkor’s ChipArray® packages are laminatebased Ball Grid Array BGA packages that are compatible with established SMT mounting processes. The near-chip-size standard outlines offer a broad selection of ball array pitch, count,

MC68EC030

Abstract: VT100 case 831-01 DSA0039281
Contextual Info: Order this document by MC68EC030UMAD/AD REV 2 MC68EC030 Addendum MC68EC030 32-Bit Embedded Controller User's Manual April 17, 1996 This addendum to the initial release of the MC68EC030 User's provides additional information not included in the original or corrections to the original text . This document and other information on this product is

MC68EC030

Abstract: VT100 TQFP 144 PACKAGE DIMENSION MC68EC030 pin
Contextual Info: Freescale Semiconductor, Inc. Order this document by MC68EC030UMAD/AD REV 2 MC68EC030 Addendum Freescale Semiconductor, Inc. MC68EC030 32-Bit Embedded Controller User's Manual April 17, 1996 This addendum to the initial release of the MC68EC030 User's provides additional information not included

LVTTL18

Abstract: LSI Rapidchip epbga DB06-000160-04 DB06-000471-01
Contextual Info: DATASHEET Entry-Level RapidChip Platform ASIC Slices RC1812, RC18Si150, RC18Si184 October 2005 Advance ® DB08-000300-00 This document is advance. As such, it describes a product under development. This information is intended to help you evaluate the product. LSI Logic reserves

Contextual Info: KM736FV4011 KM718FV4011 Prelim inary 128Kx36 & 256Kx18 SRAM FEATURES • 128Kx36 or 256Kx18 Organizations • 3.3V Core / 1.5V Output Power Supply • HSTL Input and Output Levels • Differential, HSTL Clock Inputs K,/K • Synchronous Read and Write Operation

Contextual Info: W764M32V-XSBX Not Recommended for New Designs — Replaced by W764M32V1-XBX 64Mx32 NOR Flash Multi-Chip Package 3.0V Page Mode Flash Memory  Hardware features FEATURES  Single power supply operation • Advanced Sector Protection • WP#/ACC input accelerates programming time when

nokia 1600 schematic diagram

Abstract: TUNDRA Tsi568 Tundra Tsi568a Alcatel fcbga theta jc FCBGA 10GIL TSI568 005 tx1 nortel
Contextual Info: Title Tsi568A Serial RapidIO Switch Hardware Manual Formal April 2007 80B8000_MA002_04 Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi568A, and Silicon Behind the Network, are trademarks of Tundra Semiconductor

N18N3625P1AQ-20C

Contextual Info: N18N1825P1A N18N1833P1A N18N3625P1A N18N3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs with Fast bus Turnaround FTRAMTM Architecture

N18N1825F1AG

Abstract: N18N3625F1AG N18N3625F1AQ-13C
Contextual Info: N18N1825F1A N18N1833F1A N18N3625F1A N18N3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture

Contextual Info: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •

N18N3625P1AQ-20C

Contextual Info: N18N1825P1A N18N1833P1A N18N3625P1A N18N3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs with Fast bus Turnaround FTRAMTM Architecture

Contextual Info: N18S1825P1A N18S1833P1A N18S3625P1A N18S3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs Features • • • • • •

X1880

Abstract: N18N1825F1AG N18N3625F1AQ-13C
Contextual Info: N18N1825F1A N18N1833F1A N18N3625F1A N18N3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture

Contextual Info: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •

AMR926EJ-S

Abstract: MB86R03 MB86298 MB88F332 MB86R02 1280x480 MB86297 schematic diagram lcd monitor fujitsu MB86R01 starterkit TOP227
Contextual Info: FUJITSU GDCs QUESTIONS & ANSWERS FUJITSU SEMICONDUCTOR AMERICA, Inc. Revision 1.7 July 2010 Revision History Date Version Page Change Count July 2010 1.7 64 May 12, 2009 1.6 65 Apr 23, 2008 1.5 65 July 17, 2007 1.4 59 Reformatting and reorganization, MB86R02,

WEDPN16M64V-XBX

Contextual Info: White Electronic Designs WEDPN16M64V-XBX 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,

WEDPN8M64VR-XBX

Contextual Info: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing

Contextual Info: White Electronic Designs WED3C7410E16M-400BX RISC Microprocessor Multichip Package *PRELIMINARY OVERVIEW The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

ci 7410

Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX c16 abb
Contextual Info: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,

7410 frequency divider

Abstract: 7410E WED3C7410E16M-XBX WED3C750A8M-200BX WED3C7558M-XBX
Contextual Info: White Electronic Designs WED3C7410E16M-XBX RISC Microprocessor Multichip Package The WED3C7410E16M-XBX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace,

Contextual Info: White Electronic Designs WED3C7410E16M-400BX RISC Microprocessor Multichip Package *PRELIMINARY OVERVIEW The WED3C7410E16M-400BX is offered in Commercial 0°C to +70°C , industrial (-40°C to +85°C) and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

Contextual Info: White Electronic Designs WEDPN16M64VR-XBX 16MX64 REGISTERED SYNCHRONOUS DRAM FEATURES GENERAL DESCRIPTION n Registered for enhanced performace of bus speeds The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456