THERMAL CONSIDERATIONS FOR SOT89 Search Results

JTP 38 diode smd

Abstract: p2w smd Transistor SMD SOT363 SC70 SC11 SC70-6 SO20 SSOP16 SSOP24 SC11 Thermal Considerations SOD61
Contextual Info: DISCRETE SEMICONDUCTORS General Section Module Thermal Considerations Module: THC00X Valid for: SC11 Thermal Considerations Power Diodes 1998 Dec 09 Philips Semiconductors Power Diodes Thermal Considerations THERMAL CONSIDERATIONS Thermal resistance junction

wireless charging through microwaves

Abstract: 9824 motorola wireless mobile charging through microwaves BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS RCA designers handbook Solid-State Power Circuits SLWA009 AN4A506 Plessey TRF7610
Contextual Info: Thermal Considerations for RF Power Amplifier Devices Application Report 1998 Mixed Signal Products Printed in U.S.A. 2/98 SLWA009 Thermal Considerations for RF Power Amplifier Devices SLWA009 February 1998 Printed on Recycled Paper Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

wireless mobile charging through microwaves

Abstract: RCA designers handbook Solid-State Power Circuits TRF7610 BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS 20-PIN AN1083 AN204 AP2001 SLMA002 TRF7003
Contextual Info: Thermal Considerations for RF Power Amplifier Devices Application Report 1998 Mixed Signal Products Printed in U.S.A. 2/98 SLWA009 Thermal Considerations for RF Power Amplifier Devices SLWA009 February 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor

wireless mobile charging through microwaves

Abstract: wireless charging through microwaves BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS TRF7610 20-PIN AN1083 AN204 AP2001 SLMA002 TRF7003
Contextual Info: Thermal Considerations for RF Power Amplifier Devices Application Report 1998 Mixed Signal Products Printed in U.S.A. 2/98 SLWA009 Thermal Considerations for RF Power Amplifier Devices SLWA009 February 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor

spice germanium diode

Abstract: SNW-EQ-611 PXTA14 sot89 JB TRANSISTOR SMD letter CODE PACKAGE SOT23 BSP15 BSP19 BST60 germanium transistor pnp MDA100
Contextual Info: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 S-parameter definitions 7 Equivalent package designators 8 Transistor ratings 8 Thermal considerations 11 Power derating curves for SMDs Power derating curve for SOT23

sc 107 transistor

Abstract: SOT143 thermal impedance curve
Contextual Info: GENERAL Page Quality 82 Pro Electron type numbering system 82 Rating systems 83 Letter symbols 84 S-parameter definitions 87 Equivalent package designators 88 Transistor ratings 88 Thermal considerations 91 Power derating curves for SMDs Power derating curve for SOT23

Contextual Info: SN 3 3 5 0 40V LED driver with internal switch Features General Description Simple low parts count Internal 40V power switch Wide input voltage range: 6V to 40V Up to 750mA output current SOT89-5 package High efficiency up to 95% Typical 1200 1 dimming rate

Thermal considerations for SOT89

Abstract: BD136 BD226 BDX35
Contextual Info: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)

JTP 68 diode

Abstract: SOD87 SC70-6 SO20 SSOP16 SSOP24 Thermal Considerations for Power Semiconductors SOD-64 SOD-106 SOD-83
Contextual Info: Philips Semiconductors Power Diodes Thermal Considerations Thermal resistance Circuit performance and long term reliability are affected by the temperature of the chip. Normally, both are improved by keeping the chip temperature junction temperature low.

ZLED7000

Abstract: 3 watt LED driver ZLED7000-ZI1R LED driver with internal switch
Contextual Info: Data Sheet Rev. 1.1 / August 2010 ZLED7000 40V LED Driver with Internal Switch ZLED7000 40V LED Driver with Internal Switch Brief Description Features • Capable of up to 95% efficiency*  Operates in continuous mode with a wide input range from 6 VDC to 40 VDC

ZLED7000

Abstract: ZMD AG
Contextual Info: Data Sheet Rev. 1.0 / June 2010 ZLED7000 40V LED Driver with Internal Switch ZLED7000 40V LED Driver with Internal Switch Brief Description Features • Capable of up to 95% efficiency*  Operates in continuous mode with a wide input range from 6 VDC to 40 VDC

marking da sot89

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors FEATURES BF620; BF622 PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • Video output stages. DESCRIPTION

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BST39; BST40 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BF620; BF622 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Video output stages. DESCRIPTION

bt1 marking

Abstract: SOT89 transistor marking with lb 135
Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistors BST15; BST16 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). 1 emitter 2 collector 3 base APPLICATIONS DESCRIPTION • General purpose switching and amplification.

Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistor PXTA42 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Telephony and professional communication equipment.

Contextual Info: Philips Semiconductors Product specification BF621 ; BF623 PNP high-voltage transistors FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Video output stages. DESCRIPTION

transistor P2D

Contextual Info: Philips Semiconductors Product specification PNP high-voltage transistor PXTA92 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Telephony and professional communication equipment.

SOT89 marking cec

Contextual Info: Philips Semiconductors Product specification PNP medium power transistor FEATURES BC869 PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.

PXTA14

Abstract: marking QE
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistor PXTA14 FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 30 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • High input impedance preamplifiers. DESCRIPTION

Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors BCV29; BCV49 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 60 V) 1 emitter • High DC current gain (min. 20000). 2 collector 3 base APPLICATIONS

SOT89 marking cec

Abstract: MARKING 93 SOT89 SOT89 MARKING CODE B2 BC868 BC869 BC869-16 BC869-25 PNP TRANSISTOR "SOT89" PHILIPS BC869 BL SOT89
Contextual Info: Philips Semiconductors Product specification PNP medium power transistor BC869 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Low voltage, high current LF applications.

marking code VV transistors

Abstract: PNP TRANSISTOR "SOT89" marking aa
Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BCX51 ; BCX52; BCX53 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • Medium power general purposes

marking CAC SOT89

Abstract: MARKING 93 SOT89 sot89 marking 93 SOT89 transistor marking with lb 135 BC868 BC868-25 BC869 BL SOT89 SOT89 MARKING CODE B2 Thermal considerations for SOT89 in the General
Contextual Info: Philips Semiconductors Product specification NPN medium power transistor BC868 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 20 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base • General purpose switching and amplification