THEP4C168 Search Results

Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25/35 ns (Commercial) ■ Low Power Operation (Commercial) -7 1 5 mW Active-1 2 ,1 5 - 550 mW Active - 20/25/35

Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS 2} FEATURES • Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write - P4C1682 Outputs In High Z during Write ■ Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times)

P4C1681

Abstract: P4C1682
Contextual Info: PERFORMANCE SEMICONDUCTOR 50E D • VGbSSI? DOQlfiBb 1ST H P S C P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS -FEATURES Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write

Contextual Info: P4C1682/P4C1682L, P4C1681 /P4C1681L ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Data Retention with 2.0V Supply, 0.5|iA Typical Current • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25/35 ns (Commercial) - 20/25/35/45 ns (Military)

Contextual Info: PERFORMANCE SEMICONDUCTOR 50E D • 7 ^5517 000103b 1 5 T * P S C P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS (SCRAMS FEATURES Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write - P4C1682 Outputs In High Z during Write

P4C1681L

Abstract: P4C1681 P4C1682 P4C1682L
Contextual Info: P4C1682/P4C1682L, P4C1681 /P4C1681L ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS SCRAMS FEATURES Data Retention with 2.0V Supply, 0.5|xA Typical Current • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -12/15/20/25/35 ns (Commercial) - 20/25/35/45 ns (Military)

Contextual Info: P4C1681, P4C1682 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS Xi FEATURES Separate Inputs and Outputs - P4C1681 Input Data at Outputs during Write - P4C1682 Outputs in High Z during Write • Full CMOS, 6T Cell ■ High Speed Equal Access and Cycle Times -12/15/20/25 ns (Commercial)