THD3595 Search Results

Contextual Info: THD3595 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current500m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage150 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage.8 @I(FM) (A) (Test Condition)10m @Temp. (øC) (Test Condition)25

1N4148 Allegro

Abstract: Full-Wave Bridge Rectifier
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0SCm33fl ODQbSSS 304 M A L G R DIODES Rectifiers and General-Purpose Devices ELECTRICAL CHARACTERISTICS at TA = + 25°C I* V Co'” Max. Min. Max @ iF Max. Max. Max. mA (V) (V) (mA) (nA) (ns) (PF) Geometry 70 1.0 20 25

THD6919

Abstract: THD914A THD6924 THD-4148 Allegro THD3600 THD6916 allegro THD458A THD459 THD459A THD462
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SP RA GU E. T3 D • G50M33Û ÜGD3blfl G ■ ALGR S E M I C O N D S / ICS 9 3 D 03 6 18j> " ô l ~ ^ DIODE CHIPS T H D ’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

THD458A

Abstract: THD457 THD914A 1N457 1N458A 1N485B 1N914 1N914A 1N914B THD485B
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0SCm33fl ODQbSSS 304 M A L G R DIODES Rectifiers and General-Purpose Devices ELECTRICAL CHARACTERISTICS at TA = + 25°C I* V Co'” Max. Min. Max @ iF Max. Max. Max. mA (V) (V) (mA) (nA) (ns) (PF) Geometry 70 1.0 20 25

Contextual Info: DIODES R e ctifie rs an d G e n e ra l-P u rp o se D evices E L E C T R IC A L CH A RA CTERISTICS a t T.A = + 25°C V w&wm Device Allegro Type Type Description •k Max. Min Max lF Max. Max. Max. mA (V) (V) (mA) (nA) (ns) (PF) Geometry Low Leakage 500 150