T3D 75 diode
Abstract: T3D DIODE
Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 SPRAGUE. ^3 D • ÖS13ÖS0 S E M I C O N D S / ICS G003bn 3 ■ 93D 03619 H fö f-O S DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C Id Vbr Device Type THD9751 THD9752 II* Min. V (CtlR (l*A)
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g003bnthd9751thd9752thya01+8thya02thyb01thyb02thyi01thyi02thbq01t3d 75 diodet3d diode
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diode 1N4001 specifications
Abstract: 1N4001 general diode purpose Diode Array 1N4448 THD4001 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q
Contextual Info: ALLECRO MICROSYSTEMS INC bbE » • 0S0N33Í 000bS2b £10 BA LG R ELECTRICAL CHARACTERISTICS at TA = + 25°C Device Type Type Max. Description mA v (BR) Min. (V) vF Coo> 'r *rr Max. Max. @ IF Max. Max. (V) (mA) (nA) (ns) (PF) Geometry 1N3600 THD3600 General Purpose
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0s0h33fl1n3600thd36001n4001+15thd40011n4002thd40021n4003thd40031n4004diode 1n4001 specifications1n4001 general diode purposediode array 1n44481n46101n914/1n4148thd-4148thd40041n4376thd22q
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30 kv diode
Abstract: P diode BQB 80 THBG01 THD9751 THD9752 D 10 N diode SCHOTT diode
Contextual Info: ALLEGRO MICROSYSTEM S 8514019 INC SPRAGUE. =13 D • 0304330 SEM ICO N D S/ IC S □D 0 3 h n 93D 2 ■ ALGR 03619 DIODE CHIPS ‘THD’ Photodiodes ELECTRICAL CHARACTERISTICS at TA = 25°C ^BR Device Type II* *D Min. <fclR m-A Max. (nA) i'V R (V) Min.
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thd9751thd9752thya01thya02+10thyb01thyb02thyi0130 kv diodep diodebqb 80thbg01d 10 n diodeschottdiode
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