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    TH58NVG3S0HBAI6 Search Results

    TH58NVG3S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TH58NVG3S0HBAI6
    KIOXIA IC FLASH 8GBIT PARALLEL 67VFBGA Original PDF 1.94MB
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    TH58NVG3S0HBAI6 Price and Stock

    KIOXIA

    KIOXIA TH58NVG3S0HBAI6

    IC FLASH 8GBIT PARALLEL 67VFBGA
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    TH58NVG3S0HBAI6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.


    Original
    TH58NVG3S0HBAI6 TH58NVG3S0HBAI6 4096blocks. 4352-byte 2013-09-20C PDF