TH58NVG3S0HBAI6 Search Results
TH58NVG3S0HBAI6 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TH58NVG3S0HBAI6 | KIOXIA | IC FLASH 8GBIT PARALLEL 67VFBGA | Original | 1.94MB |
TH58NVG3S0HBAI6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TH58NVG3S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG3S0HBAI6 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks. |
Original |
TH58NVG3S0HBAI6 TH58NVG3S0HBAI6 4096blocks. 4352-byte 2013-09-20C |