TH58BVG3S0HTA00 Search Results
TH58BVG3S0HTA00 Datasheets (1)
Toshiba Memory America
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TH58BVG3S0HTA00 | Toshiba Memory America | Integrated Circuits (ICs) - Memory - IC FLASH 8G PARALLEL 48TSOP I | Original | 709.01KB |
TH58BVG3S0HTA00 Price and Stock
KIOXIA
KIOXIA TH58BVG3S0HTA00IC FLASH 8GBIT PARALLEL 48TSOP I |
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TH58BVG3S0HTA00 | Tray | 5 | 1 |
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TH58BVG3S0HTA00 | Tray | 14 Weeks | 96 |
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TH58BVG3S0HTA00 Datasheets Context Search
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Contextual Info: TH58BVG3S0HTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58BVG3S0HTA00 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. |
Original |
TH58BVG3S0HTA00 TH58BVG3S0HTA00 4096blocks. 4224-byte 4224-bytes 2013-09-20C |