TH430
Abstract: Transistor TH430 D TH430 D 318bc
Contextual Info: TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.500 4L FLG .112x45° L A FEATURES: E FULL R • PG = 14.5 dB min. at 220 W/30 MHz
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TH430
Abstract: arco 429 diode gp 429 SD1728 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION
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sd1728th430arco 429diode gp 429+6m177transistor as planar pep470uf 40varco 427sd1728 m177th430 e
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Transistor TH430 D
Abstract: TH430 TH430 D
Contextual Info: TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.550 4L FLG E C FEATURES: • PG = 14.5 dB min. at 220 W/30 MHz
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arco 427
Abstract: TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION
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sd1728th430arco 427transistor as planar pep+3arco 429sd1728 m177arco 4615
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TH430
Abstract: SD1728 M177
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and
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TH430
Abstract: M177 JESD97 SD1728 TH430 marking
Contextual Info: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and
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TH430
Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728
Contextual Info: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar
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sd1728th430sd1728 m177th430 d+2transistor th430 dm177
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FLS2- transistor
Contextual Info: r i 7 ^ 7# . S G S - T H O M S O N M M » [ IC T [ » ! ] [ 1 §_ S D 1728 (T H 4 30 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS > IMD - 30 dB ■ GOLD METALLIZATION . COMMON EMITTER
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SD1728 M177
Abstract: Transistor TH430 D
Contextual Info: fry SGS-THOMSON ^ 7 / SD 1728 T H 4 3 0 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD - 30 dB GOLD METALLIZATION COMMON EMITTER P o u t — 250 W PEP WITH 14.5 dB GAIN
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SD1730
Abstract: TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727
Contextual Info: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB
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sd1405sd1487sd1224-10sd1407+9sd1729sd1730sd1411sd1733sd1726sd1727th430power transistors cross referencehf transistors
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TH430 "cross reference"
Abstract: "class AB Linear" HF TRANSISTORS class a linear hf C2075 SD1728 M177 SD1728
Contextual Info: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB
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sd1285sd1405sd1487sd1224-10+13sd1407sd1729sd1730sd1411sd1733sd1726th430 "cross referenceclass ab linearhf transistorsclass a linear hfc2075sd1728 m177sd1728
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SD1730
Abstract: TH430 M153 "class AB Linear" hf 801733 SD1726 SD1728 M113 M164 SD1224-10
Contextual Info: SILICON POWER TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur communication equipment. .400 x .425 6LFL M153 .380 4LFL (M113) .550 Dia .500 4L STUD
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sd1285sd1405sd1487sd1224-10+11sd1407sd1729sd1730th430m153class ab linear" hf801733sd1726sd1728m113m164
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SD1446
Abstract: SD140 an power 88-108 mhz M111 SD1224-10 M113 M164 SD1285 SD1405 SD1407
Contextual Info: S IL IC O N P O W E R T R A N S IS T O R S Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur com munication equipment. .400 x .425 6LFL M153 .380 4LFL
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sd1285sd1405sd1487sd1224-10+12sd1407sd1729sd1457sd1460sd1483sd1013sd1446sd140an power 88-108 mhzm111m113m164
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BUV-481
Abstract: BUV481 2n6571 BUS14 KSG31203 2SC2761 sanken str 450 bur21 ksg3
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 970 Manufacturer Ie Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max (8) (8) 500n 500n .70u .70u .70u 1.0u 1.0u 1.0u 2.0 1.0u 1.0u .80u
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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MSC1002
Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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tda0161 equivalent1n3393bdx54f equivalentbyt301000+6bux transient voltage suppressorst90r9ua776mhsgs 2n3055transistor morocco mje13007inmos transputer reference manual
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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