TH-50 6500 Search Results

Contextual Info: G an E C P L E S S E Y NOVEMBERS SEMI CO NDUC TOR S DS4242-3.3 DCR820SG PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS V DRM 6500V ' t,av , 310A ' tsm 6000A dVdt* 1000V/ os

g65sc102

Abstract: G65SC04 G65SC02 G65SC12 sis 968 GTE 6502 sty 0620 Zl04 6502 microprocessor M6800
Contextual Info: G65SCXX Series G65SC1XX Series Microcircuits CMOS G65SCXXX 8-Bit Microprocessor Family Features General Description • C M O S fa m ily th a t is co m p a tib le w ith NM O S 6500 series m icroprocessors • Uses single +5 vo lt p o w er su p p ly • Low pow er co n su m p tio n 4m A @ 1 MHz allow s b attery-pow ered

g65sc04

Abstract: G65SC102 G65SC12 6500 Microprocessors G65SC02 M6800 MC6800 G65SC12-15 G65SC1XX D1130
Contextual Info: 5 3 00 ß G65SCXX Series G65SC1XX Series L /At c a free+"sSe r Microcircuits CMOS G65SCXXX 8-Bit Microprocessor Family Features General Description • C M O S fa m ily that is co m p a tib le w ith NM O S 6500 series m icroprocessors • Uses single +5 vo lt p o w er su p p ly

g65sc102

Abstract: g65scxxx G65SC nmos 6502 microprocessor Zl02 advantages of push pull inverter
Contextual Info: A G65SCXX Seríes G65SC1XX Series CMD Microcircuits CMOS G65SCXXX 8-Bit Microprocessor Family General Description Features • CMOS fam ily th a t is com patible w ith NMOS 6500 series microprocessors • Uses single + 5 volt power supply • Low power consumption 4mA @ 1 MHz allows battery-powered

Contextual Info: S E M I C O N D U C T D R Revised April 1999 tm Data flow in each direction is controlled by output-enable O E A B and O EBA , latch-enable (LEAB and LEBA), and clock (C LKAB and C LKBA) inputs. The L C X 1 6500 is designed fo r low voltage (2.5V or 3.3V)

Contextual Info: DCR1020SF M ITEL Phase Control Thyristor S E M IC O N D U C T O R Supersedes Novem ber 1997 version, DS4245 - 3.1 DS4245 - 3.2 KEY PARAMETERS VDRM 6500V 515A Jt a v 10700A TSM 1000V/|iS dVdt 100A/|iS d l/d t APPLICATIONS • High Pow er Drives. ■

g65sc102

Abstract: G65SC12 G65SCXX G65SC02 G65SCXXX 6500 Microprocessors 6502 microprocessor F4.5C 4.5 MHZ M6800 MC6800
Contextual Info: A G65SCXX Seríes G65SC1XX Series CMD Microcircuits C M O S G 65SCXXX 8-Bit Microprocessor Family General Description Features • CMOS fam ily th a t is com patible w ith NMOS 6500 series microprocessors • Uses single + 5 volt power supply • Low power consumption 4mA @ 1 MHz allows battery-powered

6502 CPU architecture block diagram

Abstract: a04e transistor CPU 6502 A1ED 6500 CPU NCR6500/1 A04E a04e 130 Edge 6500 10013F
Contextual Info: 6500/1 and 6 500/1E NC • • • • • • SINGLE-CHIP MICROCOMPUTER 6502 CPU • - 8-bit parallel processing •Software upward / downward compatibility ■ 13 addressing modes - Decimal or binary arithmetic - True indexing capability ■ Memory addressable I/O

abb phase control thyristors

Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1370 A = 2160 A = 21.9x103 A = 1.18 V = 0.632 m Phase Control Thyristor 5STP 12K6500 Doc. No. 5SYA1069-02 Aug 10 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

5STP08G6500

Abstract: abb phase control thyristors
Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 720 A = 1140 A = 11.8x103 A = 1.24 V = 1.015 m Phase Control Thyristor 5STP 08G6500 Doc. No. 5SYA1006-05 Aug 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 830 A = 1310 A = 11.8x103 A = 1.24 V = 1.015 m Phase Control Thyristor 5STP 08F6500 Doc. No. 5SYA1056-02 Aug 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 350 A = 550 A = 4.5x103 A = 1.2 V = 2.3 m Phase Control Thyristor 5STP 03X6500 Doc. No. 5SYA1003-07 Aug. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

Contextual Info: V DRM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 380 A = 600 A = 4.5x103 A = 1.2 V = 2.3 m Phase Control Thyristor 5STP 03D6500 Doc. No. 5SYA1055-03 Aug. 11 • Patented free-floating silicon technology  Low on-state and switching losses  Designed for traction, energy and industrial applications

R6502

Abstract: CPU R6502 R6500 microcomputer system programming manual R6502 CPU rb541 microprocessor Rockwell R6500 R6541Q Rockwell 6502 z80 processor architecture R6541
Contextual Info: R6541Q • R6500/41, /42, /43 R6500 M icrocom puter System R6541Q, R6500/41, R6500/42 & R6500/43 ONE-CHIP INTELLIGENT PERIPHERAL CONTROLLER * Rockwell FEATURES INTRODUCTION • D irectly co m pa tib le w ith 6500, 6800, 8080, and Z80 bus T he R ockw ell R6541Q, R 6500/41, R 6500/42 and R 6500/43

R2114P

Abstract: R2114
Contextual Info: PART NUMBER DOCUM ENT NO. 2 9 0 0 0 D 44 REVISION 2. OCT. 1 97 8 * Rockwell R 2114 R 6500 Microcomputer System DATA SHEET 1024 X 4 STATIC RANDOM ACCESS M EMORY R2114 SYSTEM ABSTRACT FEATURES T h e ' 8 -b it R 6 50 0 m icro co m p u te r system is produced w ith N-

6500 CPU

Abstract: MC701 Edge 6500 NCR Microelectronics Division CPU 6502 F400 6502 cpu 6500 NCR6500/A1ED
Contextual Info: NIC R 6500/11, 6500/12, 6500/13 and 6500/11E SINGLE-CHIP MICROCOMPUTER * * * * * Enhanced 6502 CPU • 8-bit p ip elined arc h ite c tu re - 4 new b it m a n ipu latio n instru ctio ns set m em ory bit, reset m em ory bit, branch on b it set, branch on bit reset

abb phase control thyristors

Contextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1580 A = 2480 A = 29.7x103 A = 1.2 V = 0.458 m Bi-Directional Control Thyristor 5STB 18U6500 Doc. No. 5SYA1037-03 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology

ABB s

Contextual Info: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology

GT 1081

Abstract: S5 3000 T1791N
Contextual Info: Freewheeling Diodes Type V D D V(drm) V l(FSM) l (2)d t kA A(2>s kV Tc= -25 .+85°C I(RM) V /kA 2000, 2500 typ 1,25 24 2880 *103 2,62/6,4 3500.4500 3500.4500 3500.4500 4500 4500 4500 4500 4500 6500 typ 2 18 32 45 18 32 4,5 18 32 26 1620 5120 1012

Contextual Info: DCR1570L65 Phase Control Thyristor Preliminary Information DS5812-1.0 November 2004 LN23663 FEATURES Double Side Cooling KEY PARAMETERS High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 6500V 1568A 22000A 1500V/µs 300A/µs High Power Drives

5SYA2042

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 HiPak IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

5SYA2039

Contextual Info: Data Sheet, Doc. No. 5SYA 1413-02 04-2012 5SNA 0500J650300 ABB HiPakTM IGBT Module VCE = 6500 V IC = 500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability

CA3137E

Abstract: CA3137
Contextual Info: TV/CATV Circuits CA3137E TV Chroma Demodulator Features: 16-Lead D u a M n -L in e Plastic Package H -1 6 2 2 • Balanced chrom a demodulators m C olor difference m atrix 6500° K m DC tin t co n tro l a Three low-output-im pedance drivers for direct coupling