TH 2190 MOSFET Search Results

TH 2190 Transistor

Abstract: TH 2190 mosfet z24 mosfet
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

transistor rf m 1104

Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MOSFET marking Z4

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

TH 2190 mosfet

Abstract: th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

TH 2190 mosfet

Abstract: UTT30P06
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

th 2190

Abstract: NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110

th 2190

Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
Contextual Info: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

NIPPON CAPACITORS

Abstract: j668
Contextual Info: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high

Contextual Info: SUN08A70F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.85Ω (Typ.)  Low gate charge: Qg=33nC (Typ.)  Low reverse transfer capacitance: Crss=12.5pF (Typ.)  Lower EMI noise

TT 2190 equivalent

Abstract: TH 2190 mosfet isolated IRCP054 TH 2190 mosfet IRCP054 equivalent 64a diode
Contextual Info: PD-9.733 International S Rectifier IRCP054 HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 6 0 V ^DS on = 0 .0 1 4 Q lD = 7 0 *A

2120 r1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

Contextual Info: Ordering number : ENN6672~] N-Channel Silicon MOSFET 2SK3449 ISM lYO i DC / DC Converter Applications Package Dimensions Features unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2190 [2SK3449] 3.3, 0,7 1 : Source 2 : Drain 3 : Gate

wb4 marking

Abstract: J152 mosfet transistor 2110 transistor
Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF21045

Contextual Info: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF21045

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF7476 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and minimum on-state resistance.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF7476 is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and minimum on-state resistance.

vk200 rf choke

Abstract: vk200 MRF156 VK200 r.f choke arco 469 340G-02 choke vk200 MOSFET J220 MRF156120 Arco 469 ceramic capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF156 MRF156R The RF MOSFET Line RF Power Field-E ffect Transistors Motorola Preferred Device N-Channel Enhancement Mode MOSFETs Designed for broadband industrial/commercial applications up to 120 MHz.

TH 2190 mosfet

Contextual Info: MITSUBISHI Neh POWER MOSFET FS5VSH-2 HIGH-SPEED SWITCHING USE ; FS5VSH-2 OUTLINE DRAWING Dimensions in mm 10.5MAX. ! I 0.8 \ - 1. i o • 2.5V DRIVE • VDSS . 100V • rDS ON (MAX) .0.440