TGT72S Search Results

tlp 121-4

Abstract: TLP 433 module TLP121
Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP1 2 1 J L P 1 2 1 -4 T L P 1 21 OFFICE MACHINE U nit in mm PROGRAMMABLE CONTROLLERS A C /D C -IN P U T MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLP121 and TLP121-4 is a small outline coupler, suitable for surface mount assembly.

Contextual Info: TC6024AU GENERAL The TC6024AU is a C M O S LSI chip for driving CCD area image sensor. W hen used with an 1C for generating synchronizing signals, the TC6024AU can generate multiple timing signals. The TC6024AU has the follow ing features: FEATURES • Horizontal CCD driving pulses H1A, H1B and H2 for the

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

Contextual Info: TOSHIBA {DISCRETE/OPTO} 90 97 250 T OS HI BA st d F I t o tt s s q bóC DI SCRETE/OPTO oQQfiiia 7 08118 TBF870 iTBF872 i SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. Unit in mm 0a.z±az SL9MAX. COLOR TV CHROMA OUTPUT APPLICATIONS.

2SA495

Abstract: 02z12 2sa495 toshiba
Contextual Info: is a G aAlAs t y p e l a s e r d io d e w ith a g la ss Its w in d o w , p e a k e m is sio n w a v e l e n g t h is 780 nm . T O L D llO h a s a s p e c ia lly d e s i g n e d I S S S l s t r u c t u r e w h ic h b e s t f it s to DAD a p p lic atio n .

Contextual Info: TIM5964-16L FEATURES : • LOW IN TER M O D U LA TIO N D ISTO R TIO N I M 3 = —4 5 dBc at Po = 31.5 dBm, Single Carrier Level - H IG H POWER PjdB = 4 2 .5 dBm at 5.9 GHz to 6.4 GHz HIGH GAIN 1dB = 7.0 dB at 5.9 GHz to 6.4 GHz BROAD BAND INTERNALLY MATCHED

Contextual Info: TOSHIBA LED Lamp TLSH156P InGaAlP Red Light Emission Panel Circuit Indicator 5mm Diameter T1 -3/4 • InGaAlP Red LED • All Plastic Mold Type • Colorless Clear Lens • Low Drive Current, High Intensity Red Light Emission - Recom m ended Forward Current:

JS8819-AS

Abstract: T-1228
Contextual Info: JS8819-AS FEA TU R ES: • LOW N O ISE FIG U R E ■ 0.5 G ATE LEN G TH ■ CH IP FO R M 1.1dB at f = 8 G H z I . 6 dB at f = 12 G H z ■ HIG H ASSO C IA TED GAIN I I . 5 dB at f = 8 G H z 9.5 dB at f = 12 G H z ■ H IG H M AXIM UM AVAILABLE GAIN 15.5 dB at F = 8 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28 dBm, - Single carrier level • High power - PidB = 39 dBm at 3.7 GHz to 4.2 GHz • High gain