TGQM Search Results

SG1500GXH25

Abstract: RMA45
Contextual Info: TO SHIBA TENTATIVE SG1500GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG1500GXH25 Unit in mm INVERTER APPLICATION Vd RM—4500V Note 1 Repetitive Peak Reverse Voltage : V rrm = 4000V R.M.S On-State Current : i T(RMS) = 750A Peak Turn-Off Current : ^TGQM —1500A

toshiba gto

Abstract: SG3000GXH23 SG3000GXH29
Contextual Info: TO SH IBA SG3000GXH23 TOSHIBA GATE TURN-OFF THYRISTOR TENTATIVE INVERTER APPLICATION SG3000GXH23 Repetitive Peak Off-State Voltage V d RM = 4500 V R.M.S On-State Current ÏT RMS = 1200 A Peak Turn-Off Current :TGQM = 3000 A Critical Rate of Rise of On-State Current : d i/ dt = 400 A//us

5SGS 12F2500

Abstract: ABB Typ RGC ITGQM GTO thyristor ABB
Contextual Info: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630

Thyristor snubber

Contextual Info: 5SGS 12F3000 5SGS 12F3000 Old part no. TG 908-1200-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 200 I TAVm = 630 I TSM = 10 000

Contextual Info: 5SGS 16H3000 5SGS 16H3000 Old part no. TG 919-1600-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 1 600 I TAVm = 760 I TSM = 14 000

5SGS 16H4500

Abstract: CS 23-06 thyristor
Contextual Info: 5SGS 16H4500  5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600

ABB Typ RGC

Abstract: 5SGS12F4500
Contextual Info: 5SGS 12F4500 5SGS 12F4500 Old part no. TG 918-1200-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 200 I TAVm = 442 I TSM = 7 600

WG25008SM

Abstract: WG5018 WG5026S westcode wg WG15026R WG6006RXX WG7008S Diode Westcode Gate Turn-Off Thyristors all types of thyristors
Contextual Info: Gate Turn-off Thyristors ~ All types Symmetrical Types V DRM Type V RRM V6K ^TGQM @ CS Note 1 WG5012Rxx to 25Rxx T(AV) t V GK = -2V (Note 1) (Note 2) -w r (Note 3) I 2t •^T(RMS) ■^TSM(l) ^TSM(2) Tmse = 25°C 10ms 2 ms (Note 3) (Note 4) (Note 4) (A2s)

Contextual Info: GATE TURN-OFF THYRISTOR SG1500 R,U,W 22 CH OPPER, INVER TE R A P P L I C A R I O N . Repetitive Peak Off-State Voltage Unit in mm : V d r m =1300, 1600, R.M.S On-State Current :It (RMS) = 55 0A Peak Turn-Off Current :l TGQM= 1500A 180 0V 2 - j* 3 .6 ± 0 .2

abb cs 400

Abstract: THYRISTOR 1200 5SGS08D2500
Contextual Info: 5SGS 08D3000 5SGS 08D3000 Old part no. TG 907-800-30 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 3 000 I TGQM = 800 I TAVm = 395 I TSM = 4 500

5SGS 16H2500

Contextual Info: 5SGS 16H2500  5SGS 16H2500 Old part no. TG 919-1600-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 600 I TAVm = 760

Contextual Info: TOSHIBA LOW SNUBBERTYPE SG4000JX26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 6000V Note 1. • R.M.S. On-State Current: 't(R M S ) = 1600A (Tf=75°C) • Critical Rate of Rise of On-State Current: 'tgqm = 4000A d i/d t =500A /|is

WG5026S

Abstract: WG6006RXX X103 westcode diodes westcode wg
Contextual Info: Gate T urn-off Thyristors ~ All types Symmetrical Types V R RM ^TGQM@ C S CO ^DRM > Type V GK = -2V I t AV T « =55°C •^TSM(2) 2ms I2t (Note 4) (kA) (Note 4) (Note 4) (kA) (A 2s) 4 7.2 80 x 103 9 130 x 1 0 3 9-8 18 500 x 103 •^T(RMS) W ^ T SM (1) 10ms

Contextual Info: T O S H IB A SG800GXH24 TOSHIBA GATE TURN-OFF THYRISTOR SG800GXH24 INVERTER APPLICATION U nit in mm = 4500V Repetitive Peak Off-State Voltage V DRM R.M.S On-State C urrent IT RMS = 300A Peak Turn-Off C urrent i TGQM = 800A Critical Rate of Rise of On-State C urrent

abb cs 400

Abstract: CS thyristor cs 3-06
Contextual Info: 5SGS 08D4500 5SGS 08D4500 Old part no. TG 907-800-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 800 I TAVm = 285 I TSM = 4 000

5SGS 08D2500

Abstract: 5SGS08D2500 abb cs 400 igcm abb 800 5SGS
Contextual Info: 5SGS 08D2500  5SGS 08D2500 Old part no. TG 907-800-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 800 I TAVm = 395

CS 23-06 thyristor

Contextual Info: 5SGS 16H4500 5SGS 16H4500 Old part no. TG 919-1600-45 Gate Turn-off Thyristor Properties § Full reverse voltage § High reliability § Suitable for drives and traction applications Key Parameters V DRM, V RRM = 4 500 I TGQM = 1 600 I TAVm = 600 I TSM = 12 000

Contextual Info: 5SGS 12F2500  5SGS 12F2500 Old part no. TG 908-1200-25 Gate Turn-off Thyristor Properties • Full reverse voltage • High reliability  Suitable for drives and traction applications Key Parameters V DRM, V RRM = 2 500 I TGQM = 1 200 I TAVm = 630

SG1000GXH26

Contextual Info: T O S H IB A SG1000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX. VDRM = 4500 V lT RMS = 500 A :TGQM = !000 A d i/d t = 600 A / jus dv / dt = 1000 V / jus Ü M AXIM UM RATINGS SYMBOL RATING CHARACTERISTIC

wg5026s

Abstract: 45SP 18Rxx
Contextual Info: Gate T urn-off Thyristors ~ All ty p e s Symmetrical Types V DRM Type V RRM V GK ^TGQM @ cs ^T AV ^T(RMS) TSINk =55°C W 2 5 ° C VaK= -2V •^TSM(l) ■^TSM(2) 10ms 2m s I 2t (Note 1) (Note 1) (Note 2) (Note 3) (Note 3) (Note 4) (Note 4) (V) (V) (V) (A)

Gate Turn-off Thyristor

Abstract: gate turn-off SGB00R24 jdrm SG800 thyristor toshiba 1351B
Contextual Info: SG800 R,U,W 24 TOSHIBA GATE TURN-OFF THYRISTOR SG800 <R ,U, W) 24 (SGB00R24) U nit in mm 2-fl3.6±0.2 CHOPPER, INVERTER APPLICATION Repetitive Peak OfT-State Voltage : V d rm = 1300, 1600, 1800V R.M.S On-State Current : I t (R M S ) = 360A Peak Turn-OfF Current

SG1400EX21

Abstract: SG1400EX
Contextual Info: GATE TURN-OFF THYRISTOR SILICON DIFFUSED TYPE SG1400EX21 CHOPPER, INVERTER APPLICATION. Unit in mm ‘ ¿-¡as. 2 ± Q 2 FEATURES: . Repetitive Peak Off-State Voltage V D R M =2 500V . Repetitive Peak R e v e r s e V o l t a g e V rrm=500V . R .M.S O n - S t a t e C u r r e n t

SG3000JXH25

Contextual Info: TOSHIBA TENTATIVE SG3000JXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000JXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage VDRM = 6500V Note 1 Repetitive Peak Reverse Voltage : VRRM = 6500V R.M.S On-State Current • :T (RMS)= 800À Peak Turn-Off Current

sg3000gx

Contextual Info: TOSHIBA TENTATIVE SG3000GXH25 TOSHIBA GATE TURN-OFF THYRISTOR SG3000GXH25 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current