TGA9088A Search Results
TGA9088A Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
TGA9088A | TriQuint Semiconductor | 17-21 GHz Intermediate Power Amplifier | Original | 469.48KB | 4 | ||
TGA9088A-EPU | TriQuint Semiconductor | 17 - 21 GHz Intermediate Power Amplifier | Original | 469.49KB | 4 | ||
TGA9088A-SCC | TriQuint Semiconductor | RF Amplifier, General purpose amplifier, Single channel, Chip, 21000 MHz, 13-Pin | Original | 165.71KB | 8 |
TGA9088A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: TriQuint <+ Advance Product Information SEMICONDUCTOR 17-21 GHz Intermediate Power Amplifier Key Features and Performance TGA9088A-EPU Primary Applications 0.25um pHEMT Technology Satellite Systems 17-21 GHz Frequency Range Point-to-Point Radio 22 dBm @ P2dB Nominal Pout |
OCR Scan |
TGA9088A-EPU TGA908 EG1901A | |
Contextual Info: TriQuint €► Advance Product Information SEMICONDUCTOR« 17-21 GHz Intermediate Power Amplifier Key Features and Performance 0.25um pHEMT Technology TGA9088A-EPU Primary Applications Satellite Systems 17-21 GHz Frequency Range 22 dBm @ P2dB Nominal Pout |
OCR Scan |
TGA9088A-EPU EG1901A TGA9088A) | |
TGA9088A-SCCContextual Info: Product Data Sheet September 26, 2002 17-21 GHz Medium Power Amplifier TGA9088A-SCC Key Features and Performance • • • • • • 0.25um PHEMT Technology 17-21GHz Frequency Range 22 dBm @ P2dB Nominal Pout 18.5 dB Nominal Gain IRL>18 dB, ORL>10 dB 7V, 66mA Self Bias |
Original |
TGA9088A-SCC 17-21GHz TGA9088A-SCC 0007-inch | |
TGA9088A
Abstract: TGA9088A-EPU
|
Original |
TGA9088A-EPU 17-21GHz EG1901A TGA9088A) 0007-inch TGA9088A TGA9088A-EPU | |
TGA9088A
Abstract: TGA9088A-EPU
|
Original |
TGA9088A-EPU 17-21GHz EG1901A TGA9088A) 0007-inch TGA9088A TGA9088A-EPU | |
ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
|
Original |
||
Mil-Std-883 Wire Bond Pull Method 2011
Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
|
Original |