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    TG18N120BN Search Results

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    onsemi HGTG18N120BN

    IGBT NPT 1200V 54A TO-247-3
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    onsemi HGTG18N120BND

    IGBT NPT 1200V 54A TO-247-3
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    Chip 1 Exchange HGTG18N120BND 450
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    Harris Semiconductor HGTG18N120BND

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    Bristol Electronics HGTG18N120BND 38
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    Fairchild Semiconductor Corporation HGTG18N120BN

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    ComSIT USA HGTG18N120BN 60
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    TG18N120BN Datasheets Context Search

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    TG18N120BN

    Contextual Info: TG18N120BN S em iconductor Data Sheet November 1998 54A, 1200V, NPT Series N-Channel IGBT Features The TG18N120BN is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device


    OCR Scan     		HGTG18N120BN HGTG18N120BN TA49288. 1-800-4-HARR TG18N120BN PDF

    18n120bnd

    Abstract: C5426 TG18N120BND TA49304 HGTG18N120BND
    Contextual Info: TG18N120BND S e m iconductor October 1998 Data Sheet 54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The TG18N120BND is a Non-Punch Through IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best


    OCR Scan     		HGTG18N120BND HGTG18N120BND TA49304. 18n120bnd C5426 TG18N120BND TA49304 PDF