TF 6313 Search Results

N2M400

Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
Contextual Info: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)

high sensitivity reflective phototransistor

Abstract: photoswitch npn RPS1C Vactec VTR17
Contextual Info: RPS1-C JL e B rB RETRO PHOTO-SWITCH vac tec VTR16 VTR17 VTRI/c 0-8.0mm SENSING OPTOELECTRONICS SEALED CASE LED-PHOTOTRANSISTOR 10900 PAGE BI3/D. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 P R O D U C T D E S C R IP T IO N FEATURES • Sealed case—no dust problems due to

Contextual Info: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of

S1723-04

Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Contextual Info: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of

lensed

Abstract: VTT1222W phototransistor visible light VTT1223W VTT1225 VTT1226 VTT1227 VTT3323LA VTT3324LA VTT3325LA
Contextual Info: .025" NPN Phototransistors VTT1222W, 23W Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking,

C2E1

Abstract: N5108 MBM300GS12AW MBN600GS12AW MBM400GR6 mbn1200gr12a 4862G G3E3 Hitachi DSA002734 MBN1200D33A
Contextual Info: Date:Mar.2002 Status List M:Mass production KS02007 A:Abolition GR - A Series Advanced GR Series Absolute Maximum Ratings Connection Single Type Characteristics Outline Status 0.4 N-7 M 1.2 0.35 N-6 M 0.7 1.1 0.3 N-5 M 2.2 0.7 1.1 0.3 M- 9 M 1,250 2.2 0.6

VTT9102

Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
Contextual Info: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted

mbm150gr12

Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics

SFH205

Abstract: BPW34F VTD205 VTD34F SECOND SOURCE
Contextual Info: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light

VTT1117

Abstract: VTT1015 VTT1016 VTT1017 VTT1115 VTT1116 TO46 package VTE10xx
Contextual Info: .050" NPN Phototransistors VTT1015, 16, 17 TO-46 Flat Window Package PACKAGE DIMENSIONS inch mm CASE 1 PRODUCT DESCRIPTION TO-46 (FLAT WINDOW) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The

VTT9012

Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Contextual Info: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900

schematic retro reflective sensor

Abstract: VTR17D1 VTR16D1 sensor acetone opto-switch dark activated lamp switches high sensitivity reflective phototransistor hydrocarbon sensor Reflective Optical Sensor Opto-23
Contextual Info: Reflective Optoswitch VTR16D1 Arrow Retro with PCB Mount Leads PRODUCT DESCRIPTION This series of reflective optical switches combines an infrared emitting diode IRED with an NPN phototransistor (VTR16D1) in a one piece, sealed, IR transmitting plastic case.

opto-switch

Abstract: optoswitch VTL13D7-20 vtl23 phototransistor visible light VTL11D1 VTL11D1-20 VTL11D3 VTL11D3-20 VTL11D5-20
Contextual Info: Transmissive Optoswitch VTL11D1 - D7 Slotted Switch — 0.395 High PRODUCT DESCRIPTION This series of interrupter type transmissive optoswitches combines an infrared emitting diode IRED with an NPN phototransistor in a one piece, sealed, IR transmitting plastic

2SK2911

Contextual Info: Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A 0.4 0.16 0 to 0.1 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5

4558 opamp

Abstract: 4558 dd 4558 lowpass filter portable dvd player block diagram TDA1311 portable dvd player power supply 4558 dd data portable dvd player f 4558 sunplus* DVD
Contextual Info: MS6313 MOSA ELECTRONICS Stereo Audio DAC FEATURES • Excellent Power Supply Rejection Ratio PSRR •Easy application : • • • • • • • Voltage Output Space saving package(SOP8) Low power consumption Low total harmonic distortion Wide dynamic range(16-bit resolution)

S1723-04

Abstract: VTH2090
Contextual Info: Alternate Source/ Second Source Photodiodes VTH2090 S1723-04 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE This PIN photodiode consists of a chip with a 9.2 x 9.2

SFH206K

Abstract: 741 application current source VTD206K
Contextual Info: Alternate Source/ Second Source Photodiodes VTD206K SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 61 TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode in a waterclear,

VTD205K

Abstract: to-92 type MO-63132 pt 100 to92 SFH205K
Contextual Info: VTD205K Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,

S1723-04

Abstract: VTH2090 S1723 TF65
Contextual Info: Alternate Source/ Second Source Photodiodes VTH2090 S1723-04 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE This PIN photodiode consists of a chip with a 9.2 x 9.2

SFH205

Abstract: VTD205 photodiode 011
Contextual Info: Alternate Source/ Second Source Photodiodes VTD205 SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy

Contextual Info: Alternate Source/ Second Source Photodiodes VTD34 BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded

VTT1212

Abstract: VTT1214
Contextual Info: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted

SFH206

Abstract: VTD206
Contextual Info: Alternate Source/ Second Source Photodiodes VTD206 SFH206 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 61 TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode in a cast epoxy

Contextual Info: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,